170 related articles for article (PubMed ID: 23421269)
1. Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy.
Mizukami Y; Kosemura D; Numasawa Y; Ohshita Y; Ogura A
J Nanosci Nanotechnol; 2012 Nov; 12(11):8700-3. PubMed ID: 23421269
[TBL] [Abstract][Full Text] [Related]
2. Optical and structural properties of nanocrystalline silicon potential well structure fabricated by cat-chemical vapor deposition at 200 degrees C.
Kang SY; Keum KS; Song TH; Hong WS
J Nanosci Nanotechnol; 2013 Nov; 13(11):7568-71. PubMed ID: 24245293
[TBL] [Abstract][Full Text] [Related]
3. Surface-engineered silicon nanocrystals.
Mariotti D; Mitra S; Svrček V
Nanoscale; 2013 Feb; 5(4):1385-98. PubMed ID: 23334154
[TBL] [Abstract][Full Text] [Related]
4. Study of nanocrystalline silicon films synthesized Below 100 degrees C by catalytic chemical vapor deposition.
Song TH; Keum KS; Hong WS
J Nanosci Nanotechnol; 2013 Nov; 13(11):7519-23. PubMed ID: 24245284
[TBL] [Abstract][Full Text] [Related]
5. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.
Waman VS; Kamble MM; Ghosh SS; Mayabadi A; Sathe VG; Amalnekar DP; Pathan HM; Jadkar SR
J Nanosci Nanotechnol; 2012 Nov; 12(11):8459-66. PubMed ID: 23421231
[TBL] [Abstract][Full Text] [Related]
6. The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix.
Buljan M; Desnica UV; Drazić G; Ivanda M; Radić N; Dubcek P; Salamon K; Bernstorff S; Holý V
Nanotechnology; 2009 Feb; 20(8):085612. PubMed ID: 19417460
[TBL] [Abstract][Full Text] [Related]
7. A simple route to growth of silicon nanowires.
Pan H; Ni Z; Poh C; Feng YP; Lin J; Shen Z
J Nanosci Nanotechnol; 2008 Nov; 8(11):5787-90. PubMed ID: 19198306
[TBL] [Abstract][Full Text] [Related]
8. Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.
Cui K; Fathololoumi S; Golam Kibria M; Botton GA; Mi Z
Nanotechnology; 2012 Mar; 23(8):085205. PubMed ID: 22293649
[TBL] [Abstract][Full Text] [Related]
9. Nanostructuring of InP surface by low-energy ion beam irradiation.
Mohanta SK; Soni RK; Tripathy S; Chua SJ; Kanjilal D
J Nanosci Nanotechnol; 2007 Jun; 7(6):2046-50. PubMed ID: 17654989
[TBL] [Abstract][Full Text] [Related]
10. Phosphorus doping of ultra-small silicon nanocrystals.
Perego M; Bonafos C; Fanciulli M
Nanotechnology; 2010 Jan; 21(2):025602. PubMed ID: 19955620
[TBL] [Abstract][Full Text] [Related]
11. Vertical charge-carrier transport in Si nanocrystal/SiO2 multilayer structures.
Osinniy V; Lysgaard S; Kolkovsky V; Pankratov V; Nylandsted Larsen A
Nanotechnology; 2009 May; 20(19):195201. PubMed ID: 19420632
[TBL] [Abstract][Full Text] [Related]
12. Energy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO2 matrix.
Chen TP; Liu Y; Sun CQ; Tseng AA; Fung S
J Nanosci Nanotechnol; 2007 Jul; 7(7):2506-10. PubMed ID: 17663272
[TBL] [Abstract][Full Text] [Related]
13. Three-dimensional Si/Ge quantum dot crystals.
Grützmacher D; Fromherz T; Dais C; Stangl J; Müller E; Ekinci Y; Solak HH; Sigg H; Lechner RT; Wintersberger E; Birner S; Holý V; Bauer G
Nano Lett; 2007 Oct; 7(10):3150-6. PubMed ID: 17892317
[TBL] [Abstract][Full Text] [Related]
14. Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.
Kwon S; Chen ZC; Kim JH; Xiang J
Nano Lett; 2012 Sep; 12(9):4757-62. PubMed ID: 22889063
[TBL] [Abstract][Full Text] [Related]
15. Anisotropic lithiation behavior of crystalline silicon.
Wagesreither S; Lugstein A; Bertagnolli E
Nanotechnology; 2012 Dec; 23(49):495716. PubMed ID: 23165459
[TBL] [Abstract][Full Text] [Related]
16. High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures.
Zhang H; Amro NA; Disawal S; Elghanian R; Shile R; Fragala J
Small; 2007 Jan; 3(1):81-5. PubMed ID: 17294474
[No Abstract] [Full Text] [Related]
17. The morphology of silicon nanowires grown in the presence of trimethylaluminium.
Oehler F; Gentile P; Baron T; Hertog MD; Rouvière J; Ferret P
Nanotechnology; 2009 Jun; 20(24):245602. PubMed ID: 19471089
[TBL] [Abstract][Full Text] [Related]
18. Evolution of nc-Si network and the control of its growth by He/H2 plasma assistance in SiH4 at PECVD.
Das D; Raha D; Bhattacharya K
J Nanosci Nanotechnol; 2009 Sep; 9(9):5614-21. PubMed ID: 19928275
[TBL] [Abstract][Full Text] [Related]
19. Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals.
Mastronardi ML; Maier-Flaig F; Faulkner D; Henderson EJ; Kübel C; Lemmer U; Ozin GA
Nano Lett; 2012 Jan; 12(1):337-42. PubMed ID: 22195549
[TBL] [Abstract][Full Text] [Related]
20. Study on the growth of heteroepitaxial cubic silicon carbide layers in atmospheric-pressure H2-based plasma.
Kakiuchi H; Ohmi H; Yasutake K
J Nanosci Nanotechnol; 2011 Apr; 11(4):2903-9. PubMed ID: 21776651
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
