These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
309 related articles for article (PubMed ID: 23461268)
1. Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors. Lee KH; Park JH; Yoo YB; Jang WS; Oh JY; Chae SS; Moon KJ; Myoung JM; Baik HK ACS Appl Mater Interfaces; 2013 Apr; 5(7):2585-92. PubMed ID: 23461268 [TBL] [Abstract][Full Text] [Related]
2. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443 [TBL] [Abstract][Full Text] [Related]
3. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors. Kang YH; Min BK; Kim SK; Bae G; Song W; Lee C; Cho SY; An KS ACS Appl Mater Interfaces; 2020 Apr; 12(13):15396-15405. PubMed ID: 32148019 [TBL] [Abstract][Full Text] [Related]
4. Low-temperature, high-performance, solution-processed indium oxide thin-film transistors. Han SY; Herman GS; Chang CH J Am Chem Soc; 2011 Apr; 133(14):5166-9. PubMed ID: 21417268 [TBL] [Abstract][Full Text] [Related]
5. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585 [TBL] [Abstract][Full Text] [Related]
6. Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT. Seo JS; Bae BS ACS Appl Mater Interfaces; 2014 Sep; 6(17):15335-43. PubMed ID: 25116128 [TBL] [Abstract][Full Text] [Related]
7. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing. Park WT; Son I; Park HW; Chung KB; Xu Y; Lee T; Noh YY ACS Appl Mater Interfaces; 2015 Jun; 7(24):13289-94. PubMed ID: 26043206 [TBL] [Abstract][Full Text] [Related]
8. Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature. Seo JS; Jeon JH; Hwang YH; Park H; Ryu M; Park SH; Bae BS Sci Rep; 2013; 3():2085. PubMed ID: 23803977 [TBL] [Abstract][Full Text] [Related]
9. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition. Sheng J; Lee HJ; Oh S; Park JS ACS Appl Mater Interfaces; 2016 Dec; 8(49):33821-33828. PubMed ID: 27960372 [TBL] [Abstract][Full Text] [Related]
10. Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors. Ding X; Yang B; Xu H; Qi J; Li X; Zhang J Nanomaterials (Basel); 2021 Sep; 11(10):. PubMed ID: 34684993 [TBL] [Abstract][Full Text] [Related]
11. Facile Preparation of Highly Conductive Metal Oxides by Self-Combustion for Solution-Processed Thermoelectric Generators. Kang YH; Jang KS; Lee C; Cho SY ACS Appl Mater Interfaces; 2016 Mar; 8(8):5216-23. PubMed ID: 26856774 [TBL] [Abstract][Full Text] [Related]
12. Atomic Structure Evaluation of Solution-Processed Kim D; Lee H; Kim B; Zhang X; Bae JH; Choi JS; Baang S Materials (Basel); 2022 May; 15(10):. PubMed ID: 35629444 [TBL] [Abstract][Full Text] [Related]
13. Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process. Na JW; Rim YS; Kim HJ; Lee JH; Hong S; Kim HJ ACS Appl Mater Interfaces; 2017 Sep; 9(35):29849-29856. PubMed ID: 28812360 [TBL] [Abstract][Full Text] [Related]
14. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. Kim HS; Kim MG; Ha YG; Kanatzidis MG; Marks TJ; Facchetti A J Am Chem Soc; 2009 Aug; 131(31):10826-7. PubMed ID: 19603806 [TBL] [Abstract][Full Text] [Related]
16. Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction. Kang JK; Park SP; Na JW; Lee JH; Kim D; Kim HJ ACS Appl Mater Interfaces; 2018 Jun; 10(22):18837-18844. PubMed ID: 29749231 [TBL] [Abstract][Full Text] [Related]
17. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature. Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751 [TBL] [Abstract][Full Text] [Related]
18. A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique. Yoon S; Kim SJ; Tak YJ; Kim HJ Sci Rep; 2017 Feb; 7():43216. PubMed ID: 28230088 [TBL] [Abstract][Full Text] [Related]
19. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983 [TBL] [Abstract][Full Text] [Related]
20. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors. Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]