These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
410 related articles for article (PubMed ID: 23540523)
1. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors. Kim YJ; Yang BS; Oh S; Han SJ; Lee HW; Heo J; Jeong JK; Kim HJ ACS Appl Mater Interfaces; 2013 Apr; 5(8):3255-61. PubMed ID: 23540523 [TBL] [Abstract][Full Text] [Related]
2. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors. Kim YJ; Oh S; Yang BS; Han SJ; Lee HW; Kim HJ; Jeong JK; Hwang CS; Kim HJ ACS Appl Mater Interfaces; 2014 Aug; 6(16):14026-36. PubMed ID: 25090286 [TBL] [Abstract][Full Text] [Related]
3. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing. Ahn BD; Jeon HJ; Park JS ACS Appl Mater Interfaces; 2014 Jun; 6(12):9228-35. PubMed ID: 24892383 [TBL] [Abstract][Full Text] [Related]
4. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric. Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442 [TBL] [Abstract][Full Text] [Related]
5. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors. Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716 [TBL] [Abstract][Full Text] [Related]
6. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films. Sanctis S; Koslowski N; Hoffmann R; Guhl C; Erdem E; Weber S; Schneider JJ ACS Appl Mater Interfaces; 2017 Jun; 9(25):21328-21337. PubMed ID: 28573850 [TBL] [Abstract][Full Text] [Related]
7. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors. Wang C; Guo L; Lei M; Wang C; Chu X; Yang F; Gao X; Wamg H; Chi Y; Yang X Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889620 [TBL] [Abstract][Full Text] [Related]
8. High-Performance Indium Gallium Tin Oxide Transistors with an Al Choi CH; Kim T; Ueda S; Shiah YS; Hosono H; Kim J; Jeong JK ACS Appl Mater Interfaces; 2021 Jun; 13(24):28451-28461. PubMed ID: 34111928 [TBL] [Abstract][Full Text] [Related]
9. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Nayak PK; Hedhili MN; Cha D; Alshareef HN ACS Appl Mater Interfaces; 2013 May; 5(9):3587-90. PubMed ID: 23544956 [TBL] [Abstract][Full Text] [Related]
10. Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability. Lee YG; Choi WS ACS Appl Mater Interfaces; 2014 Jul; 6(14):11167-72. PubMed ID: 25000343 [TBL] [Abstract][Full Text] [Related]
11. Dual electrical behavior of multivalent metal cation-based oxide and its application to thin-film transistors with high mobility and excellent photobias stability. Yun MG; Ahn CH; Cho SW; Kim SH; Kim YK; Cho HK ACS Appl Mater Interfaces; 2015 Mar; 7(11):6118-24. PubMed ID: 25714371 [TBL] [Abstract][Full Text] [Related]
12. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983 [TBL] [Abstract][Full Text] [Related]
14. Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment. Feng J; Jeon SH; Park J; Lee SH; Jang J; Kang IM; Kim DK; Bae JH Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299625 [TBL] [Abstract][Full Text] [Related]
15. Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide. Kwon JM; Jung J; Rim YS; Kim DL; Kim HJ ACS Appl Mater Interfaces; 2014 Mar; 6(5):3371-7. PubMed ID: 24503476 [TBL] [Abstract][Full Text] [Related]
16. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics. Tiwari N; Rajput M; John RA; Kulkarni MR; Nguyen AC; Mathews N ACS Appl Mater Interfaces; 2018 Sep; 10(36):30506-30513. PubMed ID: 30129368 [TBL] [Abstract][Full Text] [Related]
17. Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor. Shin JH; Kim SJ; Ha SS; Im YJ; Park CH; Yi M J Nanosci Nanotechnol; 2015 Oct; 15(10):7743-7. PubMed ID: 26726405 [TBL] [Abstract][Full Text] [Related]
18. The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides. Lan L; Ding C; He P; Su H; Huang B; Xu J; Zhang S; Peng J Nanomaterials (Basel); 2022 Nov; 12(21):. PubMed ID: 36364678 [TBL] [Abstract][Full Text] [Related]
19. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443 [TBL] [Abstract][Full Text] [Related]
20. Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors. Jung TS; Lee H; Kim HJ; Lee JH; Kim HJ ACS Appl Mater Interfaces; 2018 Dec; 10(51):44554-44560. PubMed ID: 30511830 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]