These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
223 related articles for article (PubMed ID: 23546117)
1. Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition. Wang TY; Ou SL; Shen KC; Wuu DS Opt Express; 2013 Mar; 21(6):7337-42. PubMed ID: 23546117 [TBL] [Abstract][Full Text] [Related]
2. High thermal stability of high indium content InGaN films grown by pulsed laser deposition. Shen KC; Wang TY; Wuu DS; Horng RH Opt Express; 2012 Sep; 20(19):21173-80. PubMed ID: 23037241 [TBL] [Abstract][Full Text] [Related]
3. InGaZnO semiconductor thin film fabricated using pulsed laser deposition. Chen J; Wang L; Su X; Kong L; Liu G; Zhang X Opt Express; 2010 Jan; 18(2):1398-405. PubMed ID: 20173967 [TBL] [Abstract][Full Text] [Related]
4. Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode. Chen CY; Hsieh C; Liao CH; Chung WL; Chen HT; Cao W; Chang WM; Chen HS; Yao YF; Ting SY; Kiang YW; Yang CC; Hu X Opt Express; 2012 May; 20(10):11321-35. PubMed ID: 22565753 [TBL] [Abstract][Full Text] [Related]
5. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target. Shen KC; Wang TY; Wuu DS; Horng RH Opt Express; 2012 Jul; 20(14):15149-56. PubMed ID: 22772213 [TBL] [Abstract][Full Text] [Related]
6. Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates. Cui K; Fathololoumi S; Golam Kibria M; Botton GA; Mi Z Nanotechnology; 2012 Mar; 23(8):085205. PubMed ID: 22293649 [TBL] [Abstract][Full Text] [Related]
7. Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties. Hwang YJ; Wu CH; Hahn C; Jeong HE; Yang P Nano Lett; 2012 Mar; 12(3):1678-82. PubMed ID: 22369381 [TBL] [Abstract][Full Text] [Related]
8. [Raman spectra and photoluminescence spectra of InGaN/GaN multiquantum wells annealed]. Lü GW; Tang YJ; Li WH; Li ZL; Zhang GY; Du WM Guang Pu Xue Yu Guang Pu Fen Xi; 2005 Jan; 25(1):39-43. PubMed ID: 15852814 [TBL] [Abstract][Full Text] [Related]
9. Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Collins D; Jarjour A; Hadjipanayi M; Taylor R; Oliver R; Kappers M; Humphreys C; Tahraoui A Nanotechnology; 2009 Jun; 20(24):245702. PubMed ID: 19471082 [TBL] [Abstract][Full Text] [Related]
10. Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy. Nurzal N; Hsu TY; Susanto I; Yu IS Discov Nano; 2023 Apr; 18(1):60. PubMed ID: 37382746 [TBL] [Abstract][Full Text] [Related]
11. Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template. Xue JJ; Chen DJ; Liu B; Lu H; Zhang R; Zheng YD; Cui B; Wowchak AM; Dabiran AM; Xu K; Zhang JP Opt Express; 2012 Mar; 20(7):8093-9. PubMed ID: 22453480 [TBL] [Abstract][Full Text] [Related]
12. Hydroxyl radical and thermal annealing on amorphous InGaZnO4 films for DNA immobilizations. Sun D; Yamahara H; Nakane R; Matsui H; Tabata H Colloids Surf B Biointerfaces; 2015 Jun; 130():119-25. PubMed ID: 25935561 [TBL] [Abstract][Full Text] [Related]
13. Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD. Chen YS; Liao CH; Kuo CT; Tsiang RC; Wang HC Nanoscale Res Lett; 2014; 9(1):334. PubMed ID: 25024692 [TBL] [Abstract][Full Text] [Related]
14. Epitaxial growth of InGaN nanowire arrays for light emitting diodes. Hahn C; Zhang Z; Fu A; Wu CH; Hwang YJ; Gargas DJ; Yang P ACS Nano; 2011 May; 5(5):3970-6. PubMed ID: 21495684 [TBL] [Abstract][Full Text] [Related]
15. Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films. Charoenyuenyao P; Promros N; Chaleawpong R; Noymaliwan P; Borwornpornmetee N; Kamoldilok S; Porntheeraphat S; Saekow B; Chaikeeree T; Samransuksamer B; Nuchuay P; Chananonnawathorn C; Limwichean S; Horprathum M; Eiamchai P; Patthanasettakul V J Nanosci Nanotechnol; 2020 Aug; 20(8):5006-5013. PubMed ID: 32126691 [TBL] [Abstract][Full Text] [Related]
16. Nanomechanical properties of TiO2 granular thin films. Yaghoubi H; Taghavinia N; Alamdari EK; Volinsky AA ACS Appl Mater Interfaces; 2010 Sep; 2(9):2629-36. PubMed ID: 20715790 [TBL] [Abstract][Full Text] [Related]
17. Transient memory effect in the photoluminescence of InGaN single quantum wells. Feldmeier C; Abiko M; Schwarz UT; Kawakami Y; Micheletto R Opt Express; 2009 Dec; 17(25):22855-60. PubMed ID: 20052211 [TBL] [Abstract][Full Text] [Related]
18. Effect of both deposition temperature and indium doping on the properties of sol-gel dip-coated SnO2 films. Caglar M; Atar KC Spectrochim Acta A Mol Biomol Spectrosc; 2012 Oct; 96():882-8. PubMed ID: 22935595 [TBL] [Abstract][Full Text] [Related]
19. Study of band structure at the Zn(S,O,OH)/Cu(In,Ga)Se2 interface via rapid thermal annealing and their effect on the photovoltaic properties. Shin DH; Kim ST; Kim JH; Kang HJ; Ahn BT; Kwon H ACS Appl Mater Interfaces; 2013 Dec; 5(24):12921-7. PubMed ID: 24175717 [TBL] [Abstract][Full Text] [Related]