These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
207 related articles for article (PubMed ID: 23570647)
1. Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. Fang H; Tosun M; Seol G; Chang TC; Takei K; Guo J; Javey A Nano Lett; 2013 May; 13(5):1991-5. PubMed ID: 23570647 [TBL] [Abstract][Full Text] [Related]
2. n- and p-Type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides. Park HY; Dugasani SR; Kang DH; Jeon J; Jang SK; Lee S; Roh Y; Park SH; Park JH ACS Nano; 2014 Nov; 8(11):11603-13. PubMed ID: 25354666 [TBL] [Abstract][Full Text] [Related]
3. Ultra-low Doping on Two-Dimensional Transition Metal Dichalcogenides using DNA Nanostructure Doped by a Combination of Lanthanide and Metal Ions. Kang DH; Dugasani SR; Park HY; Shim J; Gnapareddy B; Jeon J; Lee S; Roh Y; Park SH; Park JH Sci Rep; 2016 Feb; 6():20333. PubMed ID: 26838524 [TBL] [Abstract][Full Text] [Related]
4. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954 [TBL] [Abstract][Full Text] [Related]
5. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2. Zhang C; Chen Y; Johnson A; Li MY; Li LJ; Mende PC; Feenstra RM; Shih CK Nano Lett; 2015 Oct; 15(10):6494-500. PubMed ID: 26389585 [TBL] [Abstract][Full Text] [Related]
6. End-Bonded Metal Contacts on WSe Chu CH; Lin HC; Yeh CH; Liang ZY; Chou MY; Chiu PW ACS Nano; 2019 Jul; 13(7):8146-8154. PubMed ID: 31244047 [TBL] [Abstract][Full Text] [Related]
7. Air-stable surface charge transfer doping of MoS₂ by benzyl viologen. Kiriya D; Tosun M; Zhao P; Kang JS; Javey A J Am Chem Soc; 2014 Jun; 136(22):7853-6. PubMed ID: 24836497 [TBL] [Abstract][Full Text] [Related]
8. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions. Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780 [TBL] [Abstract][Full Text] [Related]
10. Chemically Tuned p- and n-Type WSe Ji HG; Solís-Fernández P; Yoshimura D; Maruyama M; Endo T; Miyata Y; Okada S; Ago H Adv Mater; 2019 Oct; 31(42):e1903613. PubMed ID: 31475400 [TBL] [Abstract][Full Text] [Related]
11. High-gain inverters based on WSe2 complementary field-effect transistors. Tosun M; Chuang S; Fang H; Sachid AB; Hettick M; Lin Y; Zeng Y; Javey A ACS Nano; 2014 May; 8(5):4948-53. PubMed ID: 24684575 [TBL] [Abstract][Full Text] [Related]
12. Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides. Yamamoto M; Nouchi R; Kanki T; Nakaharai S; Hattori AN; Watanabe K; Taniguchi T; Wakayama Y; Ueno K; Tanaka H ACS Appl Mater Interfaces; 2019 Oct; 11(40):36871-36879. PubMed ID: 31525896 [TBL] [Abstract][Full Text] [Related]
13. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Yang L; Majumdar K; Liu H; Du Y; Wu H; Hatzistergos M; Hung PY; Tieckelmann R; Tsai W; Hobbs C; Ye PD Nano Lett; 2014 Nov; 14(11):6275-80. PubMed ID: 25310177 [TBL] [Abstract][Full Text] [Related]
14. Charge-transfer contacts for the measurement of correlated states in high-mobility WSe Pack J; Guo Y; Liu Z; Jessen BS; Holtzman L; Liu S; Cothrine M; Watanabe K; Taniguchi T; Mandrus DG; Barmak K; Hone J; Dean CR Nat Nanotechnol; 2024 Jul; 19(7):948-954. PubMed ID: 39054388 [TBL] [Abstract][Full Text] [Related]
15. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Movva HC; Rai A; Kang S; Kim K; Fallahazad B; Taniguchi T; Watanabe K; Tutuc E; Banerjee SK ACS Nano; 2015 Oct; 9(10):10402-10. PubMed ID: 26343531 [TBL] [Abstract][Full Text] [Related]
16. Rapid Flame Synthesis of Atomically Thin MoO Cai L; McClellan CJ; Koh AL; Li H; Yalon E; Pop E; Zheng X Nano Lett; 2017 Jun; 17(6):3854-3861. PubMed ID: 28537732 [TBL] [Abstract][Full Text] [Related]
17. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Liu W; Kang J; Sarkar D; Khatami Y; Jena D; Banerjee K Nano Lett; 2013 May; 13(5):1983-90. PubMed ID: 23527483 [TBL] [Abstract][Full Text] [Related]
18. Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe₂ field-effect transistor. Lee I; Rathi S; Li L; Lim D; Khan MA; Kannan ES; Kim GH Nanotechnology; 2015 Nov; 26(45):455203. PubMed ID: 26486939 [TBL] [Abstract][Full Text] [Related]
19. Mobility Deception in Nanoscale Transistors: An Untold Contact Story. Nasr JR; Schulman DS; Sebastian A; Horn MW; Das S Adv Mater; 2019 Jan; 31(2):e1806020. PubMed ID: 30430660 [TBL] [Abstract][Full Text] [Related]
20. Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment. Guan J; Chuang HJ; Zhou Z; Tománek D ACS Nano; 2017 Apr; 11(4):3904-3910. PubMed ID: 28319662 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]