These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

107 related articles for article (PubMed ID: 23633474)

  • 1. Temperature-dependent electron mobility in InAs nanowires.
    Gupta N; Song Y; Holloway GW; Sinha U; Haapamaki CM; Lapierre RR; Baugh J
    Nanotechnology; 2013 Jun; 24(22):225202. PubMed ID: 23633474
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Carrier transport in high mobility InAs nanowire junctionless transistors.
    Konar A; Mathew J; Nayak K; Bajaj M; Pandey RK; Dhara S; Murali KV; Deshmukh MM
    Nano Lett; 2015 Mar; 15(3):1684-90. PubMed ID: 25658044
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Quantum-confined nanowires as vehicles for enhanced electrical transport.
    Mohammad SN
    Nanotechnology; 2012 Jul; 23(28):285707. PubMed ID: 22728637
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Surface roughness induced electron mobility degradation in InAs nanowires.
    Wang F; Yip S; Han N; Fok K; Lin H; Hou JJ; Dong G; Hung T; Chan KS; Ho JC
    Nanotechnology; 2013 Sep; 24(37):375202. PubMed ID: 23965340
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires.
    Blömers C; Rieger T; Grap T; Raux M; Lepsa MI; Lüth H; Grützmacher D; Schäpers T
    Nanotechnology; 2013 Aug; 24(32):325201. PubMed ID: 23863215
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Field dependent transport properties in InAs nanowire field effect transistors.
    Dayeh SA; Susac D; Kavanagh KL; Yu ET; Wang D
    Nano Lett; 2008 Oct; 8(10):3114-9. PubMed ID: 18783282
    [TBL] [Abstract][Full Text] [Related]  

  • 7. The size dependence of tin oxide atomic cluster nanowire field effect transistors.
    Boyd EJ; Brown SA
    Nanotechnology; 2009 Oct; 20(42):425201. PubMed ID: 19779239
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Surface State Dynamics Dictating Transport in InAs Nanowires.
    Lynall D; Nair SV; Gutstein D; Shik A; Savelyev IG; Blumin M; Ruda HE
    Nano Lett; 2018 Feb; 18(2):1387-1395. PubMed ID: 29345949
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Influence of surface states on electron transport through intrinsic Ge nanowires.
    Hanrath T; Korgel BA
    J Phys Chem B; 2005 Mar; 109(12):5518-24. PubMed ID: 16851592
    [TBL] [Abstract][Full Text] [Related]  

  • 10. One-dimensional quantum confinement effect modulated thermoelectric properties in InAs nanowires.
    Tian Y; Sakr MR; Kinder JM; Liang D; Macdonald MJ; Qiu RL; Gao HJ; Gao XP
    Nano Lett; 2012 Dec; 12(12):6492-7. PubMed ID: 23167670
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Direct observation of single-charge-detection capability of nanowire field-effect transistors.
    Salfi J; Savelyev IG; Blumin M; Nair SV; Ruda HE
    Nat Nanotechnol; 2010 Oct; 5(10):737-41. PubMed ID: 20852638
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires.
    Uredat P; Kodaira R; Horiguchi R; Hara S; Beyer A; Volz K; Klar PJ; Elm MT
    Nano Lett; 2020 Jan; 20(1):618-624. PubMed ID: 31829616
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers.
    Cheung HY; Yip S; Han N; Dong G; Fang M; Yang ZX; Wang F; Lin H; Wong CY; Ho JC
    ACS Nano; 2015 Jul; 9(7):7545-52. PubMed ID: 26083845
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Stoichiometry dependent electron transport and gas sensing properties of indium oxide nanowires.
    Gali P; Sapkota G; Syllaios AJ; Littler C; Philipose U
    Nanotechnology; 2013 Jun; 24(22):225704. PubMed ID: 23644899
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Surface Properties from Transconductance in Nanoscale Systems.
    Lynall D; Byrne K; Shik A; Nair SV; Ruda HE
    Nano Lett; 2016 Oct; 16(10):6028-6035. PubMed ID: 27579852
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.
    Gutstein D; Lynall D; Nair SV; Savelyev I; Blumin M; Ercolani D; Ruda HE
    Nano Lett; 2018 Jan; 18(1):124-129. PubMed ID: 29216432
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Role of molecular surface passivation in electrical transport properties of InAs nanowires.
    Hang Q; Wang F; Carpenter PD; Zemlyanov D; Zakharov D; Stach EA; Buhro WE; Janes DB
    Nano Lett; 2008 Jan; 8(1):49-55. PubMed ID: 18052229
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electron transport and recombination in dye-sensitized mesoporous TiO2 probed by photoinduced charge-conductivity modulation spectroscopy with Monte Carlo modeling.
    Petrozza A; Groves C; Snaith HJ
    J Am Chem Soc; 2008 Oct; 130(39):12912-20. PubMed ID: 18767840
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Resolving ambiguities in nanowire field-effect transistor characterization.
    Heedt S; Otto I; Sladek K; Hardtdegen H; Schubert J; Demarina N; Lüth H; Grützmacher D; Schäpers T
    Nanoscale; 2015 Nov; 7(43):18188-97. PubMed ID: 26482127
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
    Tseng AC; Lynall D; Savelyev I; Blumin M; Wang S; Ruda HE
    Sensors (Basel); 2017 Jul; 17(7):. PubMed ID: 28714903
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.