These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

156 related articles for article (PubMed ID: 23675857)

  • 1. Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon.
    Koelling S; Richard O; Bender H; Uematsu M; Schulze A; Zschaetzsch G; Gilbert M; Vandervorst W
    Nano Lett; 2013 Jun; 13(6):2458-62. PubMed ID: 23675857
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Three-dimensional doping and diffusion in nano scaled devices as studied by atom probe tomography.
    Kambham AK; Kumar A; Florakis A; Vandervorst W
    Nanotechnology; 2013 Jul; 24(27):275705. PubMed ID: 23764804
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method.
    Shimizu Y; Takamizawa H; Inoue K; Yano F; Nagai Y; Lamagna L; Mazzeo G; Perego M; Prati E
    Nanoscale; 2014 Jan; 6(2):706-10. PubMed ID: 24284778
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers.
    Wang X; Hagmann JA; Namboodiri P; Wyrick J; Li K; Murray RE; Myers A; Misenkosen F; Stewart MD; Richter CA; Silver RM
    Nanoscale; 2018 Mar; 10(9):4488-4499. PubMed ID: 29459919
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Controlled nanoscale doping of semiconductors via molecular monolayers.
    Ho JC; Yerushalmi R; Jacobson ZA; Fan Z; Alley RL; Javey A
    Nat Mater; 2008 Jan; 7(1):62-7. PubMed ID: 17994026
    [TBL] [Abstract][Full Text] [Related]  

  • 6. 4H-SiC surface morphology after Al ion implantation and annealing with C-cap.
    Canino M; Fedeli P; Albonetti C; Nipoti R
    J Microsc; 2020 Dec; 280(3):229-240. PubMed ID: 32495384
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Release of arsenic from semiconductor wafers.
    Ungers LJ; Jones JH; McIntyre AJ; McHenry CR
    Am Ind Hyg Assoc J; 1985 Aug; 46(8):416-20. PubMed ID: 4050678
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.
    Salzmann I; Heimel G; Oehzelt M; Winkler S; Koch N
    Acc Chem Res; 2016 Mar; 49(3):370-8. PubMed ID: 26854611
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.
    Prati E; Hori M; Guagliardo F; Ferrari G; Shinada T
    Nat Nanotechnol; 2012 Jul; 7(7):443-7. PubMed ID: 22751223
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography.
    Tsutsui K; Matsushita T; Natori K; Muro T; Morikawa Y; Hoshii T; Kakushima K; Wakabayashi H; Hayashi K; Matsui F; Kinoshita T
    Nano Lett; 2017 Dec; 17(12):7533-7538. PubMed ID: 29149568
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Nanoscale Junction Formation by Gas-Phase Monolayer Doping.
    Taheri P; Fahad HM; Tosun M; Hettick M; Kiriya D; Chen K; Javey A
    ACS Appl Mater Interfaces; 2017 Jun; 9(24):20648-20655. PubMed ID: 28548483
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhancing semiconductor device performance using ordered dopant arrays.
    Shinada T; Okamoto S; Kobayashi T; Ohdomari I
    Nature; 2005 Oct; 437(7062):1128-31. PubMed ID: 16237438
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication.
    Stock TJZ; Warschkow O; Constantinou PC; Bowler DR; Schofield SR; Curson NJ
    Adv Mater; 2024 Jun; 36(24):e2312282. PubMed ID: 38380859
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Imaging of arsenic Cottrell atmospheres around silicon defects by three-dimensional atom probe tomography.
    Thompson K; Flaitz PL; Ronsheim P; Larson DJ; Kelly TF
    Science; 2007 Sep; 317(5843):1370-4. PubMed ID: 17823348
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Direct observation of defect-mediated cluster nucleation.
    Kaiser U; Muller DA; Grazul JL; Chuvilin A; Kawasaki M
    Nat Mater; 2002 Oct; 1(2):102-5. PubMed ID: 12618823
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.
    Moraru D; Samanta A; Tyszka K; Anh le T; Muruganathan M; Mizuno T; Jablonski R; Mizuta H; Tabe M
    Nanoscale Res Lett; 2015 Dec; 10(1):372. PubMed ID: 26403925
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy.
    Sun Z; Hazut O; Huang BC; Chiu YP; Chang CS; Yerushalmi R; Lauhon LJ; Seidman DN
    Nano Lett; 2016 Jul; 16(7):4490-500. PubMed ID: 27351447
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Directed Atom-by-Atom Assembly of Dopants in Silicon.
    Hudak BM; Song J; Sims H; Troparevsky MC; Humble TS; Pantelides ST; Snijders PC; Lupini AR
    ACS Nano; 2018 Jun; 12(6):5873-5879. PubMed ID: 29750507
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si.
    Voyles PM; Muller DA; Grazul JL; Citrin PH; Gossmann HJ
    Nature; 2002 Apr; 416(6883):826-9. PubMed ID: 11976677
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Concentration Dependence of Dopant Electronic Structure in Bottom-up Graphene Nanoribbons.
    Pedramrazi Z; Chen C; Zhao F; Cao T; Nguyen GD; Omrani AA; Tsai HZ; Cloke RR; Marangoni T; Rizzo DJ; Joshi T; Bronner C; Choi WW; Fischer FR; Louie SG; Crommie MF
    Nano Lett; 2018 Jun; 18(6):3550-3556. PubMed ID: 29851493
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.