604 related articles for article (PubMed ID: 23823486)
1. Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance.
Park JC; Lee HN; Im S
ACS Appl Mater Interfaces; 2013 Aug; 5(15):6990-5. PubMed ID: 23823486
[TBL] [Abstract][Full Text] [Related]
2. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
Cho MH; Choi CH; Jeong JK
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670
[TBL] [Abstract][Full Text] [Related]
3. Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.
Kim HS; Park JS; Jeong HK; Son KS; Kim TS; Seon JB; Lee E; Chung JG; Kim DH; Ryu M; Lee SY
ACS Appl Mater Interfaces; 2012 Oct; 4(10):5416-21. PubMed ID: 22957907
[TBL] [Abstract][Full Text] [Related]
4. Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.
Seo JS; Bae BS
ACS Appl Mater Interfaces; 2014 Sep; 6(17):15335-43. PubMed ID: 25116128
[TBL] [Abstract][Full Text] [Related]
5. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.
Park JC; Ahn SE; Lee HN
ACS Appl Mater Interfaces; 2013 Dec; 5(23):12262-7. PubMed ID: 24221957
[TBL] [Abstract][Full Text] [Related]
6. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.
Sheng J; Lee HJ; Oh S; Park JS
ACS Appl Mater Interfaces; 2016 Dec; 8(49):33821-33828. PubMed ID: 27960372
[TBL] [Abstract][Full Text] [Related]
7. Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process.
Na JW; Rim YS; Kim HJ; Lee JH; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Sep; 9(35):29849-29856. PubMed ID: 28812360
[TBL] [Abstract][Full Text] [Related]
8. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.
Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B
J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716
[TBL] [Abstract][Full Text] [Related]
9. Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation.
Jang K; Kim Y; Phong PD; Lee Y; Park J; Yi J
Materials (Basel); 2019 Jan; 12(1):. PubMed ID: 30621000
[TBL] [Abstract][Full Text] [Related]
10. Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm
Rabbi MH; Lee S; Sasaki D; Kawashima E; Tsuruma Y; Jang J
Small Methods; 2022 Sep; 6(9):e2200668. PubMed ID: 35879024
[TBL] [Abstract][Full Text] [Related]
11. Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel.
Dargar SK; Srivastava VM
Heliyon; 2019 Apr; 5(4):e01452. PubMed ID: 31008392
[TBL] [Abstract][Full Text] [Related]
12. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.
Huang G; Duan L; Dong G; Zhang D; Qiu Y
ACS Appl Mater Interfaces; 2014 Dec; 6(23):20786-94. PubMed ID: 25375760
[TBL] [Abstract][Full Text] [Related]
13. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
Everaerts K; Zeng L; Hennek JW; Camacho DI; Jariwala D; Bedzyk MJ; Hersam MC; Marks TJ
ACS Appl Mater Interfaces; 2013 Nov; 5(22):11884-93. PubMed ID: 24187917
[TBL] [Abstract][Full Text] [Related]
14. High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature.
Yao R; Li X; Zheng Z; Zhang X; Xiong M; Xiao S; Ning H; Wang X; Wu Y; Peng J
Materials (Basel); 2018 Oct; 11(10):. PubMed ID: 30275382
[TBL] [Abstract][Full Text] [Related]
15. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
Choi S; Song S; Kim T; Shin JC; Jo JW; Park SK; Kim YH
Micromachines (Basel); 2020 Nov; 11(12):. PubMed ID: 33255690
[TBL] [Abstract][Full Text] [Related]
16. Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.
Jeon S; Park S; Song I; Hur JH; Park J; Kim H; Kim S; Kim S; Yin H; Chung UI; Lee E; Kim C
ACS Appl Mater Interfaces; 2011 Jan; 3(1):1-6. PubMed ID: 21171647
[TBL] [Abstract][Full Text] [Related]
17. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
18. Compact Integration of Hydrogen-Resistant a-InGaZnO and Poly-Si Thin-Film Transistors.
Wang Y; Zhou Y; Xia Z; Zhou W; Zhang M; Yeung FSY; Wong M; Kwok HS; Zhang S; Lu L
Micromachines (Basel); 2022 May; 13(6):. PubMed ID: 35744453
[TBL] [Abstract][Full Text] [Related]
19. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
Kang YH; Min BK; Kim SK; Bae G; Song W; Lee C; Cho SY; An KS
ACS Appl Mater Interfaces; 2020 Apr; 12(13):15396-15405. PubMed ID: 32148019
[TBL] [Abstract][Full Text] [Related]
20. Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure.
Jung SH; Deshpande NG; Kim YB; Kim DS; Cho HK
ACS Appl Mater Interfaces; 2019 Aug; 11(31):28397-28406. PubMed ID: 31304734
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
