378 related articles for article (PubMed ID: 23835541)
1. Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer.
Nolph CA; Kassim JK; Floro JA; Reinke P
J Phys Condens Matter; 2013 Aug; 25(31):315801. PubMed ID: 23835541
[TBL] [Abstract][Full Text] [Related]
2. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
Gangopadhyay S; Yoshimura M; Ueda K
Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
[TBL] [Abstract][Full Text] [Related]
3. Growth and evolution of nickel germanide nanostructures on Ge(001).
Grzela T; Capellini G; Koczorowski W; Schubert MA; Czajka R; Curson NJ; Heidmann I; Schmidt T; Falta J; Schroeder T
Nanotechnology; 2015 Sep; 26(38):385701. PubMed ID: 26335383
[TBL] [Abstract][Full Text] [Related]
4. Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density.
Bernardi A; Ossó JO; Alonso MI; Goñi AR; Garriga M
Nanotechnology; 2006 May; 17(10):2602-8. PubMed ID: 21727511
[TBL] [Abstract][Full Text] [Related]
5. Epitaxial Mn(5)Ge(3) nano-islands on a Ge(001) surface.
Kim H; Jung GE; Lim JH; Chung KH; Kahng SJ; Son WJ; Han S
Nanotechnology; 2008 Jan; 19(2):025707. PubMed ID: 21817556
[TBL] [Abstract][Full Text] [Related]
6. Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates.
Brehm M; Grydlik M; Tayagaki T; Langer G; Schäffler F; Schmidt OG
Nanotechnology; 2015 Jun; 26(22):225202. PubMed ID: 25969173
[TBL] [Abstract][Full Text] [Related]
7. Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces.
Lee JS; Kaufman-Osborn T; Melitz W; Lee S; Delabie A; Sioncke S; Caymax M; Pourtois G; Kummel AC
J Chem Phys; 2011 Aug; 135(5):054705. PubMed ID: 21823724
[TBL] [Abstract][Full Text] [Related]
8. Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112).
Speckmann M; Schmidt T; Flege JI; Sadowski JT; Sutter P; Falta J
J Phys Condens Matter; 2009 Aug; 21(31):314020. PubMed ID: 21828581
[TBL] [Abstract][Full Text] [Related]
9. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.
Wang C; Ke SY; Yang J; Hu WD; Qiu F; Wang RF; Yang Y
Nanotechnology; 2015 Mar; 26(10):105201. PubMed ID: 25698828
[TBL] [Abstract][Full Text] [Related]
10. Surface structure of Pd(111) with less than half a monolayer of Zn.
MacLeod JM; Lipton-Duffin JA; Baraldi A; Rosei R; Rosei F
Phys Chem Chem Phys; 2013 Aug; 15(30):12488-94. PubMed ID: 23652296
[TBL] [Abstract][Full Text] [Related]
11. Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2 × 1 surfaces.
Muzychenko DA; Schouteden K; Panov VI; Van Haesendonck C
Nanotechnology; 2012 Nov; 23(43):435605. PubMed ID: 23059653
[TBL] [Abstract][Full Text] [Related]
12. Atomic imaging and modeling of H2O2(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface.
Kaufman-Osborn T; Chagarov EA; Kummel AC
J Chem Phys; 2014 May; 140(20):204708. PubMed ID: 24880312
[TBL] [Abstract][Full Text] [Related]
13. Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.
Ma YJ; Zhong Z; Yang XJ; Fan YL; Jiang ZM
Nanotechnology; 2013 Jan; 24(1):015304. PubMed ID: 23220787
[TBL] [Abstract][Full Text] [Related]
14. Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.
Samavati A; Othaman Z; Dabagh S; Ghoshal SK
J Nanosci Nanotechnol; 2014 Jul; 14(7):5266-71. PubMed ID: 24758014
[TBL] [Abstract][Full Text] [Related]
15. Synthesis and Characterization of Atomically Flat Methyl-Terminated Ge(111) Surfaces.
Wong KT; Kim YG; Soriaga MP; Brunschwig BS; Lewis NS
J Am Chem Soc; 2015 Jul; 137(28):9006-14. PubMed ID: 26154680
[TBL] [Abstract][Full Text] [Related]
16. Ferromagnetic germanide in Ge nanowire transistors for spintronics application.
Tang J; Wang CY; Hung MH; Jiang X; Chang LT; He L; Liu PH; Yang HJ; Tuan HY; Chen LJ; Wang KL
ACS Nano; 2012 Jun; 6(6):5710-7. PubMed ID: 22658951
[TBL] [Abstract][Full Text] [Related]
17. Ba termination of Ge(001) studied with STM.
Koczorowski W; Grzela T; Radny MW; Schofield SR; Capellini G; Czajka R; Schroeder T; Curson NJ
Nanotechnology; 2015 Apr; 26(15):155701. PubMed ID: 25797886
[TBL] [Abstract][Full Text] [Related]
18. Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates.
Brehm M; Groiss H; Bauer G; Gerthsen D; Clarke R; Paltiel Y; Yacoby Y
Nanotechnology; 2015 Dec; 26(48):485702. PubMed ID: 26553384
[TBL] [Abstract][Full Text] [Related]
19. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source.
Vanacore GM; Zani M; Bollani M; Bonera E; Nicotra G; Osmond J; Capellini G; Isella G; Tagliaferri A
Nanotechnology; 2014 Apr; 25(13):135606. PubMed ID: 24594569
[TBL] [Abstract][Full Text] [Related]
20. Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.
Zhang ZY; Jiang Q; Hopkinson M; Hogg RA
Opt Express; 2010 Mar; 18(7):7055-63. PubMed ID: 20389726
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]