These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

461 related articles for article (PubMed ID: 23842353)

  • 1. A PN-type quantum barrier for InGaN/GaN light emitting diodes.
    Zhang ZH; Tan ST; Ji Y; Liu W; Ju Z; Kyaw Z; Sun XW; Demir HV
    Opt Express; 2013 Jul; 21(13):15676-85. PubMed ID: 23842353
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.
    Ji Y; Zhang ZH; Tan ST; Ju ZG; Kyaw Z; Hasanov N; Liu W; Sun XW; Demir HV
    Opt Lett; 2013 Jan; 38(2):202-4. PubMed ID: 23454962
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
    Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J
    Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
    Lu T; Li S; Zhang K; Liu C; Yin Y; Wu L; Wang H; Yang X; Xiao G; Zhou Y
    Opt Express; 2011 Sep; 19(19):18319-23. PubMed ID: 21935200
    [TBL] [Abstract][Full Text] [Related]  

  • 5. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
    Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
    Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.
    Zhao H; Liu G; Zhang J; Poplawsky JD; Dierolf V; Tansu N
    Opt Express; 2011 Jul; 19 Suppl 4():A991-A1007. PubMed ID: 21747571
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.
    Zhang ZH; Ju Z; Liu W; Tan ST; Ji Y; Kyaw Z; Zhang X; Hasanov N; Sun XW; Demir HV
    Opt Lett; 2014 Apr; 39(8):2483-6. PubMed ID: 24979024
    [TBL] [Abstract][Full Text] [Related]  

  • 10. On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes.
    Zhang ZH; Liu W; Tan ST; Ju Z; Ji Y; Kyaw Z; Zhang X; Hasanov N; Zhu B; Lu S; Zhang Y; Sun XW; Demir HV
    Opt Express; 2014 May; 22 Suppl 3():A779-89. PubMed ID: 24922385
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration.
    Chang JY; Chen FM; Kuo YK; Shih YH; Sheu JK; Lai WC; Liu H
    Opt Lett; 2013 Aug; 38(16):3158-61. PubMed ID: 24104675
    [TBL] [Abstract][Full Text] [Related]  

  • 12. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
    Kyaw Z; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Hasanov N; Zhu B; Lu S; Zhang Y; Sun XW; Demir HV
    Opt Express; 2014 Jan; 22(1):809-16. PubMed ID: 24515040
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
    Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
    Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
    [TBL] [Abstract][Full Text] [Related]  

  • 14. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.
    Zhou S; Wan Z; Lei Y; Tang B; Tao G; Du P; Zhao X
    Opt Lett; 2022 Mar; 47(5):1291-1294. PubMed ID: 35230348
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.
    Chen HS; Liu ZH; Shih PY; Su CY; Chen CY; Lin CH; Yao YF; Kiang YW; Yang CC
    Opt Express; 2014 Apr; 22(7):8367-75. PubMed ID: 24718210
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design.
    Rajabi K; Wang J; Jin J; Xing Y; Wang L; Han Y; Sun C; Hao Z; Luo Y; Qian K; Chen CJ; Wu MC
    Opt Express; 2018 Sep; 26(19):24985-24991. PubMed ID: 30469606
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In
    Wang HC; Chen MC; Lin YS; Lu MY; Lin KI; Cheng YC
    Nanoscale Res Lett; 2017 Nov; 12(1):591. PubMed ID: 29124372
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Zhang ZH; Tan ST; Liu W; Ju Z; Zheng K; Kyaw Z; Ji Y; Hasanov N; Sun XW; Demir HV
    Opt Express; 2013 Feb; 21(4):4958-69. PubMed ID: 23482028
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
    Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.
    Yu CT; Lai WC; Yen CH; Chang SJ
    Opt Express; 2014 May; 22 Suppl 3():A663-70. PubMed ID: 24922374
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 24.