These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

461 related articles for article (PubMed ID: 23842353)

  • 21. Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates.
    Su VC; Chen PH; Lin RM; Lee ML; You YH; Ho CI; Chen YC; Chen WF; Kuan CH
    Opt Express; 2013 Dec; 21(24):30065-73. PubMed ID: 24514556
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser Diodes.
    Cheng L; Li Z; Zhang J; Lin X; Yang D; Chen H; Wu S; Yao S
    Nanomaterials (Basel); 2021 Aug; 11(8):. PubMed ID: 34443901
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN.
    Yu CT; Lai WC; Yen CH; Hsu HC; Chang SJ
    Opt Express; 2014 May; 22 Suppl 3():A633-41. PubMed ID: 24922371
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.
    Gu GH; Jang DH; Nam KB; Park CG
    Microsc Microanal; 2013 Aug; 19 Suppl 5():99-104. PubMed ID: 23920184
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.
    Zhang YP; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Wang LC; Kyaw Z; Hasanov N; Zhu BB; Lu SP; Sun XW; Demir HV
    Opt Express; 2015 Feb; 23(3):A34-42. PubMed ID: 25836251
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
    You YH; Su VC; Ho TE; Lin BW; Lee ML; Das A; Hsu WC; Kuan CH; Lin RM
    Nanoscale Res Lett; 2014; 9(1):596. PubMed ID: 25392706
    [TBL] [Abstract][Full Text] [Related]  

  • 27. External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes.
    Horng RH; Tien CH; Chuang SH; Liu KC; Wuu DS
    Opt Express; 2015 Nov; 23(24):31334-41. PubMed ID: 26698760
    [TBL] [Abstract][Full Text] [Related]  

  • 28. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.
    Zhou S; Liu X; Yan H; Gao Y; Xu H; Zhao J; Quan Z; Gui C; Liu S
    Sci Rep; 2018 Jul; 8(1):11053. PubMed ID: 30038360
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes.
    Tao G; Zhao X; Zhou S
    Opt Lett; 2021 Sep; 46(18):4593-4596. PubMed ID: 34525055
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice.
    Cho LW; Lee B; Lee K; Kim JS; Ryu MY
    J Nanosci Nanotechnol; 2021 Nov; 21(11):5648-5652. PubMed ID: 33980375
    [TBL] [Abstract][Full Text] [Related]  

  • 31. An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.
    Liu M; Zhao J; Zhou S; Gao Y; Hu J; Liu X; Ding X
    Nanomaterials (Basel); 2018 Jun; 8(7):. PubMed ID: 29933543
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO₂nanoparticles.
    Jeon DW; Jang LW; Cho HS; Kwon KS; Dong MJ; Polyakov AY; Ju JW; Chung TH; Baek JH; Lee IH
    Opt Express; 2014 Sep; 22(18):21454-9. PubMed ID: 25321523
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.
    Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092
    [TBL] [Abstract][Full Text] [Related]  

  • 34. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.
    Sheu JK; Chen FB; Yen WY; Wang YC; Liu CN; Yeh YH; Lee ML
    Opt Express; 2015 Apr; 23(7):A371-81. PubMed ID: 25968802
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Advantages of blue InGaN light-emitting diodes with AlGaN barriers.
    Chang JY; Tsai MC; Kuo YK
    Opt Lett; 2010 May; 35(9):1368-70. PubMed ID: 20436572
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles.
    Hong SH; Kim JJ; Kang JW; Jung YS; Kim DY; Yim SY; Park SJ
    Nanotechnology; 2015 Sep; 26(38):385204. PubMed ID: 26335045
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer.
    Zhou Q; Wang H; Xu M; Zhang XC
    Nanomaterials (Basel); 2018 Jul; 8(7):. PubMed ID: 29987245
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
    Tsai CL; Wu WC
    Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure.
    Zhao X; Wan Z; Gong L; Tao G; Zhou S
    Nanomaterials (Basel); 2021 Nov; 11(12):. PubMed ID: 34947580
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 24.