309 related articles for article (PubMed ID: 23857981)
1. Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies.
Ryu YK; Chiesa M; Garcia R
Nanotechnology; 2013 Aug; 24(31):315205. PubMed ID: 23857981
[TBL] [Abstract][Full Text] [Related]
2. Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors.
Lu N; Gao A; Dai P; Li T; Wang Y; Gao X; Song S; Fan C; Wang Y
Methods; 2013 Oct; 63(3):212-8. PubMed ID: 23886908
[TBL] [Abstract][Full Text] [Related]
3. Experimental study on the subthreshold swing of silicon nanowire transistors.
Zhang Y; Xiong Y; Yang X; Wang Y; Han W; Yang F
J Nanosci Nanotechnol; 2010 Nov; 10(11):7113-6. PubMed ID: 21137876
[TBL] [Abstract][Full Text] [Related]
4. Top-down fabricated silicon nanowire sensors for real-time chemical detection.
Park I; Li Z; Pisano AP; Williams RS
Nanotechnology; 2010 Jan; 21(1):015501. PubMed ID: 19946164
[TBL] [Abstract][Full Text] [Related]
5. Top-down fabricated silicon-nanowire-based field-effect transistor device on a (111) silicon wafer.
Yu X; Wang Y; Zhou H; Liu Y; Wang Y; Li T; Wang Y
Small; 2013 Feb; 9(4):525-30. PubMed ID: 23143874
[TBL] [Abstract][Full Text] [Related]
6. Multichannel ZnO nanowire field effect transistors by lift-off process.
Ebert M; Ghazali NAB; Kiang KS; Zeimpekis I; Maerz B; de Planque MRR; Chong HMH
Nanotechnology; 2018 Oct; 29(41):415302. PubMed ID: 30027889
[TBL] [Abstract][Full Text] [Related]
7. Silicon nanowire circuits fabricated by AFM oxidation nanolithography.
Martínez RV; Martínez J; Garcia R
Nanotechnology; 2010 Jun; 21(24):245301. PubMed ID: 20484797
[TBL] [Abstract][Full Text] [Related]
8. Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors.
Tian R; Regonda S; Gao J; Liu Y; Hu W
Lab Chip; 2011 Jun; 11(11):1952-61. PubMed ID: 21505681
[TBL] [Abstract][Full Text] [Related]
9. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic.
Lee M; Jeon Y; Moon T; Kim S
ACS Nano; 2011 Apr; 5(4):2629-36. PubMed ID: 21355599
[TBL] [Abstract][Full Text] [Related]
10. CMOS-compatible, label-free silicon-nanowire biosensors to detect cardiac troponin I for acute myocardial infarction diagnosis.
Kong T; Su R; Zhang B; Zhang Q; Cheng G
Biosens Bioelectron; 2012 Apr; 34(1):267-72. PubMed ID: 22386490
[TBL] [Abstract][Full Text] [Related]
11. Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.
Kim S; Rim T; Kim K; Lee U; Baek E; Lee H; Baek CK; Meyyappan M; Deen MJ; Lee JS
Analyst; 2011 Dec; 136(23):5012-6. PubMed ID: 22068238
[TBL] [Abstract][Full Text] [Related]
12. High performance horizontal gate-all-around silicon nanowire field-effect transistors.
Shirak O; Shtempluck O; Kotchtakov V; Bahir G; Yaish YE
Nanotechnology; 2012 Oct; 23(39):395202. PubMed ID: 22971804
[TBL] [Abstract][Full Text] [Related]
13. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
Chang YK; Hong FC
Nanotechnology; 2009 May; 20(19):195302. PubMed ID: 19420638
[TBL] [Abstract][Full Text] [Related]
14. Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography.
Martinez J; Martínez RV; Garcia R
Nano Lett; 2008 Nov; 8(11):3636-9. PubMed ID: 18826289
[TBL] [Abstract][Full Text] [Related]
15. Top-gated silicon nanowire transistors in a single fabrication step.
Colli A; Tahraoui A; Fasoli A; Kivioja JM; Milne WI; Ferrari AC
ACS Nano; 2009 Jun; 3(6):1587-93. PubMed ID: 19425540
[TBL] [Abstract][Full Text] [Related]
16. Label-Free Direct Detection of miRNAs with Poly-Silicon Nanowire Biosensors.
He J; Zhu J; Gong C; Qi J; Xiao H; Jiang B; Zhao Y
PLoS One; 2015; 10(12):e0145160. PubMed ID: 26709827
[TBL] [Abstract][Full Text] [Related]
17. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.
Lee M; Koo J; Chung EA; Jeong DY; Koo YS; Kim S
Nanotechnology; 2009 Nov; 20(45):455201. PubMed ID: 19822935
[TBL] [Abstract][Full Text] [Related]
18. Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.
Opoku C; Hoettges KF; Hughes MP; Stolojan V; Silva SR; Shkunov M
Nanotechnology; 2013 Oct; 24(40):405203. PubMed ID: 24029562
[TBL] [Abstract][Full Text] [Related]
19. Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays.
Tintelott M; Pachauri V; Ingebrandt S; Vu XT
Sensors (Basel); 2021 Jul; 21(15):. PubMed ID: 34372390
[TBL] [Abstract][Full Text] [Related]
20. The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing.
Chang YK; Hong FC
Nanotechnology; 2009 Jun; 20(23):235202. PubMed ID: 19448287
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]