These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

194 related articles for article (PubMed ID: 23858857)

  • 1. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
    Jeon Y; Kang J; Lee M; Moon T; Kim S
    J Nanosci Nanotechnol; 2013 May; 13(5):3350-3. PubMed ID: 23858857
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
    Park C; Lee S; Choi M; Kang M; Jung Y; Hwang S; Ahn D; Lee J; Song C
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4150-3. PubMed ID: 18047139
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.
    Kang J; Moon T; Jeon Y; Kim H; Kim S
    J Nanosci Nanotechnol; 2013 May; 13(5):3526-8. PubMed ID: 23858894
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.
    Yoon C; Jeon Y; Yun J; Kim S
    J Nanosci Nanotechnol; 2012 Jan; 12(1):578-84. PubMed ID: 22524023
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Fabrication of suspended silicon nanowire arrays.
    Lee KN; Jung SW; Shin KS; Kim WH; Lee MH; Seong WK
    Small; 2008 May; 4(5):642-8. PubMed ID: 18431721
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Coplanar-gate transparent graphene transistors and inverters on plastic.
    Kim BJ; Lee SK; Kang MS; Ahn JH; Cho JH
    ACS Nano; 2012 Oct; 6(10):8646-51. PubMed ID: 22954200
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Multifunctional devices and logic gates with undoped silicon nanowires.
    Mongillo M; Spathis P; Katsaros G; Gentile P; De Franceschi S
    Nano Lett; 2012 Jun; 12(6):3074-9. PubMed ID: 22594644
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V; Riel H; Senz S; Karg S; Riess W; Gösele U
    Small; 2006 Jan; 2(1):85-8. PubMed ID: 17193560
    [No Abstract]   [Full Text] [Related]  

  • 9. Nanowire lithography on silicon.
    Colli A; Fasoli A; Pisana S; Fu Y; Beecher P; Milne WI; Ferrari AC
    Nano Lett; 2008 May; 8(5):1358-62. PubMed ID: 18386934
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.
    Sohn JI; Choi SS; Morris SM; Bendall JS; Coles HJ; Hong WK; Jo G; Lee T; Welland ME
    Nano Lett; 2010 Nov; 10(11):4316-20. PubMed ID: 20945844
    [TBL] [Abstract][Full Text] [Related]  

  • 11. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA; Aplin DP; Zhou X; Yu PK; Yu ET; Wang D
    Small; 2007 Feb; 3(2):326-32. PubMed ID: 17199246
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Programmable direct-printing nanowire electronic components.
    Lee TI; Choi WJ; Moon KJ; Choi JH; Kar JP; Das SN; Kim YS; Baik HK; Myoung JM
    Nano Lett; 2010 Mar; 10(3):1016-21. PubMed ID: 20108927
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Si/a-Si core/shell nanowires as nonvolatile crossbar switches.
    Dong Y; Yu G; McAlpine MC; Lu W; Lieber CM
    Nano Lett; 2008 Feb; 8(2):386-91. PubMed ID: 18220442
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK; Hong FC
    Nanotechnology; 2009 May; 20(19):195302. PubMed ID: 19420638
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Reconfigurable silicon nanowire transistors.
    Heinzig A; Slesazeck S; Kreupl F; Mikolajick T; Weber WM
    Nano Lett; 2012 Jan; 12(1):119-24. PubMed ID: 22111808
    [TBL] [Abstract][Full Text] [Related]  

  • 16. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
    Tomioka K; Motohisa J; Hara S; Hiruma K; Fukui T
    Nano Lett; 2010 May; 10(5):1639-44. PubMed ID: 20377199
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Integrated circuits and logic operations based on single-layer MoS2.
    Radisavljevic B; Whitwick MB; Kis A
    ACS Nano; 2011 Dec; 5(12):9934-8. PubMed ID: 22073905
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhancement-mode silicon nanowire field-effect transistors on plastic substrates.
    Chung EA; Koo J; Lee M; Jeong DY; Kim S
    Small; 2009 Aug; 5(16):1821-4. PubMed ID: 19408257
    [No Abstract]   [Full Text] [Related]  

  • 19. A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology.
    Zhao HQ; Kasai S; Shiratori Y; Hashizume T
    Nanotechnology; 2009 Jun; 20(24):245203. PubMed ID: 19468164
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A; Hong WK; Lee T
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.