126 related articles for article (PubMed ID: 23858906)
1. Near-infrared photodetection in n-type nanocrystalline FeSi2/p-type Si heterojunctions.
Promros N; Chen L; Yoshitake T
J Nanosci Nanotechnol; 2013 May; 13(5):3577-81. PubMed ID: 23858906
[TBL] [Abstract][Full Text] [Related]
2. Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method.
Park S; Cho K; Kim S
J Nanosci Nanotechnol; 2013 May; 13(5):3539-41. PubMed ID: 23858897
[TBL] [Abstract][Full Text] [Related]
3. Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures.
Sang L; Hu J; Zou R; Koide Y; Liao M
Sci Rep; 2013; 3():2368. PubMed ID: 23917790
[TBL] [Abstract][Full Text] [Related]
4. Silicon-Germanium multi-quantum well photodetectors in the near infrared.
Onaran E; Onbasli MC; Yesilyurt A; Yu HY; Nayfeh AM; Okyay AK
Opt Express; 2012 Mar; 20(7):7608-15. PubMed ID: 22453440
[TBL] [Abstract][Full Text] [Related]
5. A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection.
Levell JW; Giardini ME; Samuel ID
Opt Express; 2010 Feb; 18(4):3219-25. PubMed ID: 20389329
[TBL] [Abstract][Full Text] [Related]
6. Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.
Chen Y; Cheng T; Cheng C; Wang C; Chen C; Wei C; Chen Y
Opt Express; 2010 Jan; 18(1):56-62. PubMed ID: 20173822
[TBL] [Abstract][Full Text] [Related]
7. Silicon photodiodes with high photoconductive gain at room temperature.
Li X; Carey JE; Sickler JW; Pralle MU; Palsule C; Vineis CJ
Opt Express; 2012 Feb; 20(5):5518-23. PubMed ID: 22418357
[TBL] [Abstract][Full Text] [Related]
8. High-sensitivity photovoltaic responses in manganite-based heterojunctions on Si substrates for weak light detection.
Zhao SS; Ni H; Zhao K; Zhao SQ; Kong YC; Wong HK
Appl Opt; 2011 Jun; 50(17):2666-70. PubMed ID: 21673770
[TBL] [Abstract][Full Text] [Related]
9. Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.
Gassenq A; Hattasan N; Cerutti L; Rodriguez JB; Tournié E; Roelkens G
Opt Express; 2012 May; 20(11):11665-72. PubMed ID: 22714153
[TBL] [Abstract][Full Text] [Related]
10. GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.
Oehme M; Kostecki K; Ye K; Bechler S; Ulbricht K; Schmid M; Kaschel M; Gollhofer M; Körner R; Zhang W; Kasper E; Schulze J
Opt Express; 2014 Jan; 22(1):839-46. PubMed ID: 24515043
[TBL] [Abstract][Full Text] [Related]
11. Silicon avalanche photodiode operation and lifetime analysis for small satellites.
Tan YC; Chandrasekara R; Cheng C; Ling A
Opt Express; 2013 Jul; 21(14):16946-54. PubMed ID: 23938543
[TBL] [Abstract][Full Text] [Related]
12. Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding.
Gity F; Daly A; Snyder B; Peters FH; Hayes J; Colinge C; Morrison AP; Corbett B
Opt Express; 2013 Jul; 21(14):17309-14. PubMed ID: 23938577
[TBL] [Abstract][Full Text] [Related]
13. Study of nanocrystalline silicon films synthesized Below 100 degrees C by catalytic chemical vapor deposition.
Song TH; Keum KS; Hong WS
J Nanosci Nanotechnol; 2013 Nov; 13(11):7519-23. PubMed ID: 24245284
[TBL] [Abstract][Full Text] [Related]
14. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.
Kang Y; Zadka M; Litski S; Sarid G; Morse M; Paniccia MJ; Kuo YH; Bowers J; Beling A; Liu HD; McIntosh DC; Campbell J; Pauchard A
Opt Express; 2008 Jun; 16(13):9365-71. PubMed ID: 18575500
[TBL] [Abstract][Full Text] [Related]
15. Enhanced electroluminescence from nanoscale silicon p+ -n junctions made with an anodic aluminum oxide pattern.
Hong T; Chen T; Ran GZ; Wen J; Li YZ; Dai T; Qin GG
Nanotechnology; 2010 Jan; 21(2):025301. PubMed ID: 19955614
[TBL] [Abstract][Full Text] [Related]
16. Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.
Manna S; Ashok VD; De SK
ACS Appl Mater Interfaces; 2010 Dec; 2(12):3539-43. PubMed ID: 21121615
[TBL] [Abstract][Full Text] [Related]
17. Light Detection and Carrier Transportation Mechanism in
Sittisart P; Promros N; Chaleawpong R; Charoenyuenyao P; Borwornpornmetee N; Tanaka Y; Yoshitake T
J Nanosci Nanotechnol; 2020 Aug; 20(8):5082-5088. PubMed ID: 32126703
[TBL] [Abstract][Full Text] [Related]
18. High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts.
Zou R; Zhang Z; Hu J; Sang L; Koide Y; Liao M
Nanotechnology; 2013 Dec; 24(49):495701. PubMed ID: 24231924
[TBL] [Abstract][Full Text] [Related]
19. Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm.
Casalino M; Coppola G; Iodice M; Rendina I; Sirleto L
Opt Express; 2012 May; 20(11):12599-609. PubMed ID: 22714247
[TBL] [Abstract][Full Text] [Related]
20. Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector.
Lim G; Manzur T; Kar A
Appl Opt; 2014 Dec; 53(36):8410-23. PubMed ID: 25608189
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
