These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
248 related articles for article (PubMed ID: 23858930)
1. Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes. Oh S; Shin KS; Kim SW; Lee S; Yu H; Cho S; Kim KK J Nanosci Nanotechnol; 2013 May; 13(5):3696-9. PubMed ID: 23858930 [TBL] [Abstract][Full Text] [Related]
2. Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays. Yin Z; Liu X; Wu Y; Hao X; Xu X Opt Express; 2012 Jan; 20(2):1013-21. PubMed ID: 22274448 [TBL] [Abstract][Full Text] [Related]
3. High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications. Horng RH; Shen KC; Yin CY; Huang CY; Wuu DS Opt Express; 2013 Jun; 21(12):14452-7. PubMed ID: 23787632 [TBL] [Abstract][Full Text] [Related]
4. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands. Wei T; Kong Q; Wang J; Li J; Zeng Y; Wang G; Li J; Liao Y; Yi F Opt Express; 2011 Jan; 19(2):1065-71. PubMed ID: 21263645 [TBL] [Abstract][Full Text] [Related]
5. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes. Jang HW; Ryu SW; Yu HK; Lee S; Lee JL Nanotechnology; 2010 Jan; 21(2):025203. PubMed ID: 19955615 [TBL] [Abstract][Full Text] [Related]
6. GaN nanostructure-based light emitting diodes and semiconductor lasers. Viswanath AK J Nanosci Nanotechnol; 2014 Feb; 14(2):1947-82. PubMed ID: 24749467 [TBL] [Abstract][Full Text] [Related]
7. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes. Chen JT; Lai WC; Kao YJ; Yang YY; Sheu JK Opt Express; 2012 Feb; 20(5):5689-95. PubMed ID: 22418376 [TBL] [Abstract][Full Text] [Related]
8. Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer. Zhang L; Li Q; Shang L; Wang F; Qu C; Zhao F Opt Express; 2013 Jul; 21(14):16578-83. PubMed ID: 23938509 [TBL] [Abstract][Full Text] [Related]
9. An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes. Kim SH; Park HH; Song YH; Park HJ; Kim JB; Jeon SR; Jeong H; Jeong MS; Yang GM Opt Express; 2013 Mar; 21(6):7125-30. PubMed ID: 23546094 [TBL] [Abstract][Full Text] [Related]
10. Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-walls. Jeong H; Kim YH; Seo TH; Lee HS; Kim JS; Suh EK; Jeong MS Opt Express; 2012 May; 20(10):10597-604. PubMed ID: 22565686 [TBL] [Abstract][Full Text] [Related]
11. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2). Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974 [TBL] [Abstract][Full Text] [Related]
12. Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide. Liang HK; Yu SF; Yang HY Opt Express; 2010 Feb; 18(4):3687-92. PubMed ID: 20389378 [TBL] [Abstract][Full Text] [Related]
13. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface. Sun B; Zhao L; Wei T; Yi X; Liu Z; Wang G; Li J; Yi F Opt Express; 2012 Aug; 20(17):18537-44. PubMed ID: 23038492 [TBL] [Abstract][Full Text] [Related]
15. Gallium nitride nanowire based nanogenerators and light-emitting diodes. Chen CY; Zhu G; Hu Y; Yu JW; Song J; Cheng KY; Peng LH; Chou LJ; Wang ZL ACS Nano; 2012 Jun; 6(6):5687-92. PubMed ID: 22607154 [TBL] [Abstract][Full Text] [Related]
16. Enhanced light output power of thin film GaN-based high voltage light-emitting diodes. Tien CH; Chen KY; Hsu CP; Horng RH Opt Express; 2014 Oct; 22 Suppl 6():A1462-8. PubMed ID: 25607303 [TBL] [Abstract][Full Text] [Related]
17. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode. Chen LC; Wang CK; Huang JB; Hong LS Nanotechnology; 2009 Feb; 20(8):085303. PubMed ID: 19417447 [TBL] [Abstract][Full Text] [Related]
18. Enhancement of photoluminescence intensity of GaN-based light-emitting diodes with coated polystyrene/silica core-shell nanostructures. Yeon S; Park J J Nanosci Nanotechnol; 2013 Nov; 13(11):7653-7. PubMed ID: 24245309 [TBL] [Abstract][Full Text] [Related]
19. Integration of ZnO microcrystals with tailored dimensions forming light emitting diodes and UV photovoltaic cells. Cole JJ; Wang X; Knuesel RJ; Jacobs HO Nano Lett; 2008 May; 8(5):1477-81. PubMed ID: 18407698 [TBL] [Abstract][Full Text] [Related]
20. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors. Ryu JH; Kim HY; Kim HK; Katharria YS; Han N; Kang JH; Park YJ; Han M; Ryu BD; Ko KB; Suh EK; Hong CH Opt Express; 2012 Apr; 20(9):9999-10003. PubMed ID: 22535092 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]