These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

150 related articles for article (PubMed ID: 23899164)

  • 1. Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition.
    Xu S; Hao Y; Zhang J; Jiang T; Yang L; Lu X; Lin Z
    Nano Lett; 2013 Aug; 13(8):3654-7. PubMed ID: 23899164
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy.
    Nami M; Eller RF; Okur S; Rishinaramangalam AK; Liu S; Brener I; Feezell DF
    Nanotechnology; 2017 Jan; 28(2):025202. PubMed ID: 27905321
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire.
    Song J; Choi J; Zhang C; Deng Z; Xie Y; Han J
    ACS Appl Mater Interfaces; 2019 Sep; 11(36):33140-33146. PubMed ID: 31454216
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Using seed particle composition to control structural and optical properties of GaN nanowires.
    Zhou X; Chesin J; Crawford S; Gradečak S
    Nanotechnology; 2012 Jul; 23(28):285603. PubMed ID: 22717518
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.
    Liu Q; Liu B; Yang W; Yang B; Zhang X; Labbé C; Portier X; An V; Jiang X
    Nanoscale; 2017 Apr; 9(16):5212-5221. PubMed ID: 28397937
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.
    Ra YH; Navamathavan R; Park JH; Lee CR
    Nano Lett; 2013 Aug; 13(8):3506-16. PubMed ID: 23701263
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ultralong and defect-free GaN nanowires grown by the HVPE process.
    Avit G; Lekhal K; André Y; Bougerol C; Réveret F; Leymarie J; Gil E; Monier G; Castelluci D; Trassoudaine A
    Nano Lett; 2014 Feb; 14(2):559-62. PubMed ID: 24393103
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs.
    Ito K; Lu W; Katsuro S; Okuda R; Nakayama N; Sone N; Mizutani K; Iwaya M; Takeuchi T; Kamiyama S; Akasaki I
    Nanoscale Adv; 2021 Dec; 4(1):102-110. PubMed ID: 36132962
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst.
    Lee K; Chae S; Jang J; Min D; Kim J; Eom D; Yoo YS; Cho YH; Nam O
    Nanotechnology; 2015 Aug; 26(33):335601. PubMed ID: 26222432
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Comparison of Si doping effect on GaN nanowires and films synthesized by metal-organic chemical vapor deposition.
    Maeng J; Kwon MK; Kwon SS; Jo G; Song S; Kim TW; Choi BS; Park SJ; Lee T
    J Nanosci Nanotechnol; 2008 Oct; 8(10):4934-9. PubMed ID: 19198366
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Spatial distribution of defect luminescence in GaN nanowires.
    Li Q; Wang GT
    Nano Lett; 2010 May; 10(5):1554-8. PubMed ID: 20392110
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Core-shell GaN/AlGaN nanowires grown by selective area epitaxy.
    Adhikari S; Kremer F; Lysevych M; Jagadish C; Tan HH
    Nanoscale Horiz; 2023 Mar; 8(4):530-542. PubMed ID: 36825590
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process.
    Zhang C; Liu X; Li J; Zhang X; Yang W; Jin X; Liu F; Yao J; Jiang X; Liu B
    Nanoscale; 2020 Feb; 12(7):4393-4399. PubMed ID: 32025692
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.
    Liang F; Zhao D; Jiang D; Liu Z; Zhu J; Chen P; Yang J; Liu S; Xing Y; Zhang L; Li M; Zhang Y; Du G
    Nanomaterials (Basel); 2018 Sep; 8(9):. PubMed ID: 30235861
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN.
    Kamarundzaman A; Abu Bakar AS; Azman A; Omar AZ; Talik NA; Supangat A; Abd Majid WH
    Sci Rep; 2021 May; 11(1):9724. PubMed ID: 33958689
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.
    Son JS; Honda Y; Amano H
    Opt Express; 2014 Feb; 22(3):3585-92. PubMed ID: 24663649
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.
    Park JH; Pozuelo M; Setiawan BP; Chung CH
    Nanoscale Res Lett; 2016 Dec; 11(1):208. PubMed ID: 27094822
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction.
    Xiao Y; Vanka S; Pham TA; Dong WJ; Sun Y; Liu X; Navid IA; Varley JB; Hajibabaei H; Hamann TW; Ogitsu T; Mi Z
    Nano Lett; 2022 Mar; 22(6):2236-2243. PubMed ID: 35258977
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.