These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

265 related articles for article (PubMed ID: 23924186)

  • 1. Electric stress-induced threshold voltage instability of multilayer MoS2 field effect transistors.
    Cho K; Park W; Park J; Jeong H; Jang J; Kim TY; Hong WK; Hong S; Lee T
    ACS Nano; 2013 Sep; 7(9):7751-8. PubMed ID: 23924186
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors.
    Feng W; Zheng W; Chen X; Liu G; Hu P
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26691-5. PubMed ID: 26575205
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors.
    Cho K; Kim TY; Park W; Park J; Kim D; Jang J; Jeong H; Hong S; Lee T
    Nanotechnology; 2014 Apr; 25(15):155201. PubMed ID: 24642746
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors.
    Choe M; Park W; Kang JW; Jeong S; Hong WK; Lee BH; Park SJ; Lee T
    Nanotechnology; 2012 Dec; 23(48):485201. PubMed ID: 23128783
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Improving the Stability of High-Performance Multilayer MoS
    Liu N; Baek J; Kim SM; Hong S; Hong YK; Kim YS; Kim HS; Kim S; Park J
    ACS Appl Mater Interfaces; 2017 Dec; 9(49):42943-42950. PubMed ID: 29160684
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.
    Hong WK; Jo G; Sohn JI; Park W; Choe M; Wang G; Kahng YH; Welland ME; Lee T
    ACS Nano; 2010 Feb; 4(2):811-8. PubMed ID: 20112950
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors.
    Lan C; Yip S; Kang X; Meng Y; Bu X; Ho JC
    ACS Appl Mater Interfaces; 2020 Dec; 12(50):56330-56337. PubMed ID: 33287538
    [TBL] [Abstract][Full Text] [Related]  

  • 8. The intrinsic origin of hysteresis in MoS2 field effect transistors.
    Shu J; Wu G; Guo Y; Liu B; Wei X; Chen Q
    Nanoscale; 2016 Feb; 8(5):3049-56. PubMed ID: 26782750
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors.
    Park W; Park J; Jang J; Lee H; Jeong H; Cho K; Hong S; Lee T
    Nanotechnology; 2013 Mar; 24(9):095202. PubMed ID: 23403849
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Hydrogen plasma-mediated modification of the electrical transport properties of ZnO nanowire field effect transistors.
    Hong WK; Yoon J; Lee T
    Nanotechnology; 2015 Mar; 26(12):125202. PubMed ID: 25736097
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electrical Properties of Synthesized Large-Area MoSâ‚‚ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts.
    Kim TY; Amani M; Ahn GH; Song Y; Javey A; Chung S; Lee T
    ACS Nano; 2016 Feb; 10(2):2819-26. PubMed ID: 26820160
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effects of Charge Trapping at the MoS
    Huang X; Yao Y; Peng S; Zhang D; Shi J; Jin Z
    Materials (Basel); 2020 Jun; 13(13):. PubMed ID: 32605183
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS
    Lee C; Rathi S; Khan MA; Lim D; Kim Y; Yun SJ; Youn DH; Watanabe K; Taniguchi T; Kim GH
    Nanotechnology; 2018 Aug; 29(33):335202. PubMed ID: 29786609
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.
    Chen L; Xue F; Li X; Huang X; Wang L; Kou J; Wang ZL
    ACS Nano; 2016 Jan; 10(1):1546-51. PubMed ID: 26695840
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Threshold Voltage Control of Multilayered MoS
    Roh J; Ryu JH; Baek GW; Jung H; Seo SG; An K; Jeong BG; Lee DC; Hong BH; Bae WK; Lee JH; Lee C; Jin SH
    Small; 2019 Feb; 15(7):e1803852. PubMed ID: 30637933
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Accurate Threshold Voltage Reliability Evaluation of Thin Al
    Goyal N; Parihar N; Jawa H; Mahapatra S; Lodha S
    ACS Appl Mater Interfaces; 2019 Jul; 11(26):23673-23680. PubMed ID: 31252490
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density.
    Panzer MJ; Frisbie CD
    J Am Chem Soc; 2007 May; 129(20):6599-607. PubMed ID: 17472381
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Fluorinated polyimide gate dielectrics for the advancing the electrical stability of organic field-effect transistors.
    Baek Y; Lim S; Yoo EJ; Kim LH; Kim H; Lee SW; Kim SH; Park CE
    ACS Appl Mater Interfaces; 2014 Sep; 6(17):15209-16. PubMed ID: 25137674
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Damage-free mica/MoS
    Zou X; Xu J; Liu L; Wang H; Lai PT; Tang WM
    Nanotechnology; 2019 Aug; 30(34):345204. PubMed ID: 31067521
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optimizing Al-doped ZrO
    Song X; Xu J; Liu L; Deng Y; Lai PT; Tang WM
    Nanotechnology; 2020 Mar; 31(13):135206. PubMed ID: 31766028
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.