These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

122 related articles for article (PubMed ID: 23938534)

  • 1. Size-controlled InGaN/GaN nanorod array fabrication and optical characterization.
    Bae SY; Kong DJ; Lee JY; Seo DJ; Lee DS
    Opt Express; 2013 Jul; 21(14):16854-62. PubMed ID: 23938534
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.
    Li Q; Westlake KR; Crawford MH; Lee SR; Koleske DD; Figiel JJ; Cross KC; Fathololoumi S; Mi Z; Wang GT
    Opt Express; 2011 Dec; 19(25):25528-34. PubMed ID: 22273946
    [TBL] [Abstract][Full Text] [Related]  

  • 3. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.
    Yeh TW; Lin YT; Stewart LS; Dapkus PD; Sarkissian R; O'Brien JD; Ahn B; Nutt SR
    Nano Lett; 2012 Jun; 12(6):3257-62. PubMed ID: 22587013
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
    Cardin V; Dion-Bertrand LI; Grégoire P; Nguyen HP; Sakowicz M; Mi Z; Silva C; Leonelli R
    Nanotechnology; 2013 Feb; 24(4):045702. PubMed ID: 23299780
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.
    Hong CC; Ahn H; Wu CY; Gwo S
    Opt Express; 2009 Sep; 17(20):17227-33. PubMed ID: 19907509
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.
    Park H; Baik KH; Kim J; Ren F; Pearton SJ
    Opt Express; 2013 May; 21(10):12908-13. PubMed ID: 23736510
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Spontaneous emission in GaN/InGaN photonic crystal nanopillars.
    David A; Benisty H; Weisbuch C
    Opt Express; 2007 Dec; 15(26):17991-8004. PubMed ID: 19551097
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.
    Ho CH; Lien DH; Chang HC; Lin CA; Kang CF; Hsing MK; Lai KY; He JH
    Nanoscale; 2012 Dec; 4(23):7346-9. PubMed ID: 23086234
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.
    Kang ES; Ju JW; Kim JS; Ahn HK; Lee JK; Kim JH; Shin DC; Lee IH
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4053-6. PubMed ID: 18047117
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M; Zou J; Guo YN; Auchterlonie GJ; Joyce HJ; Gao Q; Tan HH; Jagadish C; Kim Y
    Small; 2007 Nov; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract]   [Full Text] [Related]  

  • 11. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.
    Son JH; Lee JL
    Opt Express; 2010 Mar; 18(6):5466-71. PubMed ID: 20389563
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template.
    Xue JJ; Chen DJ; Liu B; Lu H; Zhang R; Zheng YD; Cui B; Wowchak AM; Dabiran AM; Xu K; Zhang JP
    Opt Express; 2012 Mar; 20(7):8093-9. PubMed ID: 22453480
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.
    Jang HW; Ryu SW; Yu HK; Lee S; Lee JL
    Nanotechnology; 2010 Jan; 21(2):025203. PubMed ID: 19955615
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The controlled growth of GaN nanowires.
    Hersee SD; Sun X; Wang X
    Nano Lett; 2006 Aug; 6(8):1808-11. PubMed ID: 16895377
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Crystallography and elasticity of individual GaN nanotubes.
    Liu B; Bando Y; Wang M; Tang C; Mitome M; Golberg D
    Nanotechnology; 2009 May; 20(18):185705. PubMed ID: 19420628
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.
    Wang X; Wang ZM; Liang B; Salamo GJ; Shih CK
    Nano Lett; 2006 Sep; 6(9):1847-51. PubMed ID: 16967989
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.
    Cui K; Fathololoumi S; Golam Kibria M; Botton GA; Mi Z
    Nanotechnology; 2012 Mar; 23(8):085205. PubMed ID: 22293649
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
    Jia C; Yu T; Lu H; Zhong C; Sun Y; Tong Y; Zhang G
    Opt Express; 2013 Apr; 21(7):8444-9. PubMed ID: 23571934
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Epitaxial growth of InGaN nanowire arrays for light emitting diodes.
    Hahn C; Zhang Z; Fu A; Wu CH; Hwang YJ; Gargas DJ; Yang P
    ACS Nano; 2011 May; 5(5):3970-6. PubMed ID: 21495684
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
    Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.