These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

282 related articles for article (PubMed ID: 23962037)

  • 1. Accelerated formation of metal oxide thin film at 200 °C using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications.
    Jeong WH; Kim DL; Kim HJ
    ACS Appl Mater Interfaces; 2013 Sep; 5(18):9051-6. PubMed ID: 23962037
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.
    Park WT; Son I; Park HW; Chung KB; Xu Y; Lee T; Noh YY
    ACS Appl Mater Interfaces; 2015 Jun; 7(24):13289-94. PubMed ID: 26043206
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Solution-Grown Homojunction Oxide Thin-Film Transistors.
    Lee J; Lee J; Park J; Lee SE; Lee EG; Im C; Lim KH; Kim YS
    ACS Appl Mater Interfaces; 2019 Jan; 11(4):4103-4110. PubMed ID: 30607933
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.
    Socratous J; Banger KK; Vaynzof Y; Sadhanala A; Brown AD; Sepe A; Steiner U; Sirringhaus H
    Adv Funct Mater; 2015 Mar; 25(12):1873-1885. PubMed ID: 26190964
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors.
    Nayak PK; Hedhili MN; Cha D; Alshareef HN
    ACS Appl Mater Interfaces; 2013 May; 5(9):3587-90. PubMed ID: 23544956
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.
    Kim JH; Rim YS; Kim HJ
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):4819-22. PubMed ID: 24611468
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.
    Xu W; Wang H; Xie F; Chen J; Cao H; Xu JB
    ACS Appl Mater Interfaces; 2015 Mar; 7(10):5803-10. PubMed ID: 25679286
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.
    Han SY; Herman GS; Chang CH
    J Am Chem Soc; 2011 Apr; 133(14):5166-9. PubMed ID: 21417268
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.
    Lee KH; Park JH; Yoo YB; Jang WS; Oh JY; Chae SS; Moon KJ; Myoung JM; Baik HK
    ACS Appl Mater Interfaces; 2013 Apr; 5(7):2585-92. PubMed ID: 23461268
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.
    Huang G; Duan L; Dong G; Zhang D; Qiu Y
    ACS Appl Mater Interfaces; 2014 Dec; 6(23):20786-94. PubMed ID: 25375760
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor.
    Yoon JY; Jeong S; Lee SS; Kim YH; Ka JW; Yi MH; Jang KS
    ACS Appl Mater Interfaces; 2013 Jun; 5(11):5149-55. PubMed ID: 23692313
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
    Moon CJ; Kim HS
    ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK
    ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors.
    Hennek JW; Kim MG; Kanatzidis MG; Facchetti A; Marks TJ
    J Am Chem Soc; 2012 Jun; 134(23):9593-6. PubMed ID: 22625409
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Strong Influence of Humidity on Low-Temperature Thin-Film Fabrication via Metal Aqua Complex for High Performance Oxide Semiconductor Thin-Film Transistors.
    Lim KH; Huh JE; Lee J; Cho NK; Park JW; Nam BI; Lee E; Kim YS
    ACS Appl Mater Interfaces; 2017 Jan; 9(1):548-557. PubMed ID: 27936583
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors.
    Zhang X; Lee H; Kim J; Kim EJ; Park J
    Materials (Basel); 2017 Dec; 11(1):. PubMed ID: 29283408
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors.
    Koo CY; Song K; Jung Y; Yang W; Kim SH; Jeong S; Moon J
    ACS Appl Mater Interfaces; 2012 Mar; 4(3):1456-61. PubMed ID: 22311703
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
    ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 15.