137 related articles for article (PubMed ID: 23963467)
1. Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.
Yan ZB; Liu JM
Sci Rep; 2013; 3():2482. PubMed ID: 23963467
[TBL] [Abstract][Full Text] [Related]
2. Scaling effect on unipolar and bipolar resistive switching of metal oxides.
Yanagida T; Nagashima K; Oka K; Kanai M; Klamchuen A; Park BH; Kawai T
Sci Rep; 2013; 3():1657. PubMed ID: 23584551
[TBL] [Abstract][Full Text] [Related]
3. The mechanism of electroforming of metal oxide memristive switches.
Joshua Yang J; Miao F; Pickett MD; Ohlberg DA; Stewart DR; Lau CN; Williams RS
Nanotechnology; 2009 May; 20(21):215201. PubMed ID: 19423925
[TBL] [Abstract][Full Text] [Related]
4. Magnetoelectric charge trap memory.
Bauer U; Przybylski M; Kirschner J; Beach GS
Nano Lett; 2012 Mar; 12(3):1437-42. PubMed ID: 22300444
[TBL] [Abstract][Full Text] [Related]
5. Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.
Chambers SA; Gu M; Sushko PV; Yang H; Wang C; Browning ND
Adv Mater; 2013 Aug; 25(29):4001-5. PubMed ID: 23649872
[TBL] [Abstract][Full Text] [Related]
6. Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes.
Park WI; Yoon JM; Park M; Lee J; Kim SK; Jeong JW; Kim K; Jeong HY; Jeon S; No KS; Lee JY; Jung YS
Nano Lett; 2012 Mar; 12(3):1235-40. PubMed ID: 22324809
[TBL] [Abstract][Full Text] [Related]
7. C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe.
Zheng T; Jia H; Wallace RM; Gnade BE
Rev Sci Instrum; 2007 Oct; 78(10):104702. PubMed ID: 17979444
[TBL] [Abstract][Full Text] [Related]
8. Memristive switching mechanism for metal/oxide/metal nanodevices.
Yang JJ; Pickett MD; Li X; Ohlberg DA; Stewart DR; Williams RS
Nat Nanotechnol; 2008 Jul; 3(7):429-33. PubMed ID: 18654568
[TBL] [Abstract][Full Text] [Related]
9. Incorporation of manganese dioxide within ultraporous activated graphene for high-performance electrochemical capacitors.
Zhao X; Zhang L; Murali S; Stoller MD; Zhang Q; Zhu Y; Ruoff RS
ACS Nano; 2012 Jun; 6(6):5404-12. PubMed ID: 22554307
[TBL] [Abstract][Full Text] [Related]
10. Large areal mass, flexible and free-standing reduced graphene oxide/manganese dioxide paper for asymmetric supercapacitor device.
Sumboja A; Foo CY; Wang X; Lee PS
Adv Mater; 2013 May; 25(20):2809-15. PubMed ID: 23580421
[TBL] [Abstract][Full Text] [Related]
11. High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays.
Lee W; Park J; Kim S; Woo J; Shin J; Choi G; Park S; Lee D; Cha E; Lee BH; Hwang H
ACS Nano; 2012 Sep; 6(9):8166-72. PubMed ID: 22928469
[TBL] [Abstract][Full Text] [Related]
12. Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.
Park IS; Lee JH; Lee S; Ahn J
J Nanosci Nanotechnol; 2007 Nov; 7(11):4139-42. PubMed ID: 18047136
[TBL] [Abstract][Full Text] [Related]
13. High-quality metal oxide core/shell nanowire arrays on conductive substrates for electrochemical energy storage.
Xia X; Tu J; Zhang Y; Wang X; Gu C; Zhao XB; Fan HJ
ACS Nano; 2012 Jun; 6(6):5531-8. PubMed ID: 22545560
[TBL] [Abstract][Full Text] [Related]
14. Introduction to new memory paradigms: memristive phenomena and neuromorphic applications.
Waser R; Dittmann R; Menzel S; Noll T
Faraday Discuss; 2019 Feb; 213(0):11-27. PubMed ID: 30740612
[TBL] [Abstract][Full Text] [Related]
15. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3.
Szot K; Speier W; Bihlmayer G; Waser R
Nat Mater; 2006 Apr; 5(4):312-20. PubMed ID: 16565712
[TBL] [Abstract][Full Text] [Related]
16. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
Venugopal G; Kim SJ
J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
[TBL] [Abstract][Full Text] [Related]
17. CMOS compatible nanoscale nonvolatile resistance switching memory.
Jo SH; Lu W
Nano Lett; 2008 Feb; 8(2):392-7. PubMed ID: 18217785
[TBL] [Abstract][Full Text] [Related]
18. Scalable one-pot bacteria-templating synthesis route toward hierarchical, porous-Co3O4 superstructures for supercapacitor electrodes.
Shim HW; Lim AH; Kim JC; Jang E; Seo SD; Lee GH; Kim TD; Kim DW
Sci Rep; 2013; 3():2325. PubMed ID: 23900049
[TBL] [Abstract][Full Text] [Related]
19. PLL jitter reduction by utilizing a ferroelectric capacitor as a VCO timing element.
Pauls G; Kalkur TS
IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Jun; 54(6):1096-102. PubMed ID: 17571808
[TBL] [Abstract][Full Text] [Related]
20. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.
Kim S; Kim SJ; Kim KM; Lee SR; Chang M; Cho E; Kim YB; Kim CJ; Chung U-; Yoo IK
Sci Rep; 2013; 3():1680. PubMed ID: 23604263
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
