These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

131 related articles for article (PubMed ID: 24205676)

  • 1. Growth of semipolar InGaN quantum well structure using self-organized nano-masks on m-sapphire.
    Ryu Y; Jeong J; Jang J; Lee K; Min D; Kim J; Kim M; Moon S; Yoo G; Nam O
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6429-33. PubMed ID: 24205676
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on
    Kapoor A; Finot S; Grenier V; Robin E; Bougerol C; Bleuse J; Jacopin G; Eymery J; Durand C
    ACS Appl Mater Interfaces; 2020 Apr; 12(16):19092-19101. PubMed ID: 32208628
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.
    Bergbauer W; Strassburg M; Kölper Ch; Linder N; Roder C; Lähnemann J; Trampert A; Fündling S; Li SF; Wehmann HH; Waag A
    Nanotechnology; 2010 Jul; 21(30):305201. PubMed ID: 20603534
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition.
    Liao CH; Tu CG; Chang WM; Su CY; Shih PY; Chen HT; Yao YF; Hsieh C; Chen HS; Lin CH; Yu CK; Kiang YW; Yang CC
    Opt Express; 2014 Jul; 22(14):17303-19. PubMed ID: 25090544
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.
    Shi C; Zhang C; Yang F; Park MJ; Kwak JS; Jung S; Choi YH; Wang X; Xiao M
    Opt Express; 2014 May; 22 Suppl 3():A790-9. PubMed ID: 24922386
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.
    Okur S; Nami M; Rishinaramangalam AK; Oh SH; DenBaars SP; Liu S; Brener I; Feezell DF
    Opt Express; 2017 Feb; 25(3):2178-2186. PubMed ID: 29519065
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging.
    Kusch G; Conroy M; Li H; Edwards PR; Zhao C; Ooi BS; Pugh J; Cryan MJ; Parbrook PJ; Martin RW
    Sci Rep; 2018 Jan; 8(1):1742. PubMed ID: 29379097
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
    Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
    ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template.
    Li H; Wong MS; Khoury M; Bonef B; Zhang H; Chow Y; Li P; Kearns J; Taylor AA; De Mierry P; Hassan Z; Nakamura S; DenBaars SP
    Opt Express; 2019 Aug; 27(17):24154-24160. PubMed ID: 31510309
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates.
    Li W; Wang L; Chai R; Wen L; Wang Z; Guo W; Wang H; Yang S
    Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080045
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires.
    Johar MA; Song HG; Waseem A; Kang JH; Ha JS; Cho YH; Ryu SW
    Nanoscale; 2019 Jun; 11(22):10932-10943. PubMed ID: 31139802
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.
    Song J; Choi J; Xiong K; Xie Y; Cha JJ; Han J
    ACS Appl Mater Interfaces; 2017 Apr; 9(16):14088-14092. PubMed ID: 28361536
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Investigation on epitaxial lateral overgrowth of InGaN/GaN multi-quantum-well nanowires.
    Yin Y; Sun H; Tang X; Cao R; Chen P; Shi Y; Zhang R; Zheng Y
    J Nanosci Nanotechnol; 2013 Feb; 13(2):1389-91. PubMed ID: 23646644
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.
    Park SH; Mishra D; Eugene Pak Y; Kang K; Park CY; Yoo SH; Cho YH; Shim MB; Kim S
    Opt Express; 2014 Jun; 22(12):14850-8. PubMed ID: 24977580
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar [Formula: see text] core-shell triangular nanostripe GaN/InGaN LEDs.
    Okur S; Rishinaramangalam AK; Mishkat-Ul-Masabih S; Nami M; Liu S; Brener I; Brueck SRJ; Feezell DF
    Nanotechnology; 2018 Jun; 29(23):235206. PubMed ID: 29557788
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness.
    Jia Z; Hao X; Lu T; Dong H; Jia Z; Ma S; Liang J; Jia W; Xu B
    RSC Adv; 2020 Nov; 10(68):41443-41452. PubMed ID: 35516542
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
    You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J
    Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.
    Ji Q; Li L; Zhang W; Wang J; Liu P; Xie Y; Yan T; Yang W; Chen W; Hu X
    ACS Appl Mater Interfaces; 2016 Aug; 8(33):21480-9. PubMed ID: 27484167
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.