These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

158 related articles for article (PubMed ID: 24224535)

  • 1. Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit.
    Ng KW; Tran TT; Ko WS; Chen R; Lu F; Chang-Hasnain CJ
    Nano Lett; 2013; 13(12):5931-7. PubMed ID: 24224535
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Unconventional growth mechanism for monolithic integration of III-V on silicon.
    Ng KW; Ko WS; Tran TT; Chen R; Nazarenko MV; Lu F; Dubrovskii VG; Kamp M; Forchel A; Chang-Hasnain CJ
    ACS Nano; 2013 Jan; 7(1):100-7. PubMed ID: 23240995
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Nanolasers grown on silicon-based MOSFETs.
    Lu F; Tran TT; Ko WS; Ng KW; Chen R; Chang-Hasnain C
    Opt Express; 2012 May; 20(11):12171-6. PubMed ID: 22714204
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.
    Yang J; Bhattacharya P
    Opt Express; 2008 Mar; 16(7):5136-40. PubMed ID: 18542613
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.
    Palit S; Kirch J; Huang M; Mawst L; Jokerst NM
    Opt Lett; 2010 Oct; 35(20):3474-6. PubMed ID: 20967104
    [TBL] [Abstract][Full Text] [Related]  

  • 6. In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics.
    Shin JC; Kim KH; Yu KJ; Hu H; Yin L; Ning CZ; Rogers JA; Zuo JM; Li X
    Nano Lett; 2011 Nov; 11(11):4831-8. PubMed ID: 21967406
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T; Rosenbach D; Mussler G; Schäpers T; Grützmacher D; Lepsa MI
    Nano Lett; 2015 Mar; 15(3):1979-86. PubMed ID: 25650521
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A; Jiang Q; Tang M; Seeds A; Liu H
    Opt Express; 2012 Sep; 20(20):22181-7. PubMed ID: 23037366
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Single rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides.
    Tian Z; Veerasubramanian V; Bianucci P; Mukherjee S; Mi Z; Kirk AG; Plant DV
    Opt Express; 2011 Jun; 19(13):12164-71. PubMed ID: 21716453
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.
    Hsu CW; Chen YF; Su YK
    Nanotechnology; 2012 Dec; 23(49):495306. PubMed ID: 23154824
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Bottom-up photonic crystal cavities formed by patterned III-V nanopillars.
    Scofield AC; Shapiro JN; Lin A; Williams AD; Wong PS; Liang BL; Huffaker DL
    Nano Lett; 2011 Jun; 11(6):2242-6. PubMed ID: 21591759
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.
    Tung KH; Huang J; Danner A
    J Nanosci Nanotechnol; 2016 Jun; 16(6):6465-9. PubMed ID: 27427737
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.
    Madhukar A; Lu S; Konkar A; Zhang Y; Ho M; Hughes SM; Alivisatos AP
    Nano Lett; 2005 Mar; 5(3):479-82. PubMed ID: 15755098
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K; Guimard D; Bordel D; Iwamoto S; Arakawa Y
    Opt Express; 2010 May; 18(10):10604-8. PubMed ID: 20588912
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P; Popovitz-Biro R; Johnson E; Madsen MH; Nygård J; Shtrikman H
    Nano Lett; 2010 Nov; 10(11):4475-82. PubMed ID: 20932012
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.
    Djie HS; Ooi BS; Fang XM; Wu Y; Fastenau JM; Liu WK; Hopkinson M
    Opt Lett; 2007 Jan; 32(1):44-6. PubMed ID: 17167578
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Shrinking and growing: grain boundary density reduction for efficient polysilicon thin-film solar cells.
    Kim DR; Lee CH; Weisse JM; Cho IS; Zheng X
    Nano Lett; 2012 Dec; 12(12):6485-91. PubMed ID: 23167740
    [TBL] [Abstract][Full Text] [Related]  

  • 18. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
    Chuang LC; Sedgwick FG; Chen R; Ko WS; Moewe M; Ng KW; Tran TT; Chang-Hasnain C
    Nano Lett; 2011 Feb; 11(2):385-90. PubMed ID: 21174451
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Tanabe K; Nomura M; Guimard D; Iwamoto S; Arakawa Y
    Opt Express; 2009 Apr; 17(9):7036-42. PubMed ID: 19399078
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y; Joyce HJ; Gao Q; Tan HH; Jagadish C; Paladugu M; Zou J; Suvorova AA
    Nano Lett; 2006 Apr; 6(4):599-604. PubMed ID: 16608251
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.