These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
374 related articles for article (PubMed ID: 24251907)
1. Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors. Fabiano S; Crispin X; Berggren M ACS Appl Mater Interfaces; 2014 Jan; 6(1):438-42. PubMed ID: 24251907 [TBL] [Abstract][Full Text] [Related]
2. Local Maps of the Polarization and Depolarization in Organic Ferroelectric Field-Effect Transistors. Cai R; Jonas AM Sci Rep; 2016 Feb; 6():22116. PubMed ID: 26905962 [TBL] [Abstract][Full Text] [Related]
4. Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates. Ma C; Gong Y; Lu R; Brown E; Ma B; Li J; Wu J Nanoscale; 2015 Nov; 7(44):18489-97. PubMed ID: 26331952 [TBL] [Abstract][Full Text] [Related]
5. Single ion conducting, polymerized ionic liquid triblock copolymer films: high capacitance electrolyte gates for n-type transistors. Choi JH; Xie W; Gu Y; Frisbie CD; Lodge TP ACS Appl Mater Interfaces; 2015 Apr; 7(13):7294-302. PubMed ID: 25821907 [TBL] [Abstract][Full Text] [Related]
6. Characterization and simulation of electrolyte-gated organic field-effect transistors. Melzer K; Brändlein M; Popescu B; Popescu D; Lugli P; Scarpa G Faraday Discuss; 2014; 174():399-411. PubMed ID: 25325799 [TBL] [Abstract][Full Text] [Related]
7. Self-polarized Poly(vinylidene fluoride) Ultrathin Film and Its Piezo/Ferroelectric Properties. Liu J; Zhao Q; Dong Y; Sun X; Hu Z; Dong H; Hu W; Yan S ACS Appl Mater Interfaces; 2020 Jul; 12(26):29818-29825. PubMed ID: 32498506 [TBL] [Abstract][Full Text] [Related]
8. Chemically cross-linked thin poly(vinylidene fluoride-co-trifluoroethylene)films for nonvolatile ferroelectric polymer memory. Shin YJ; Kang SJ; Jung HJ; Park YJ; Bae I; Choi DH; Park C ACS Appl Mater Interfaces; 2011 Feb; 3(2):582-9. PubMed ID: 21302914 [TBL] [Abstract][Full Text] [Related]
10. Electric bistability induced by incorporating self-assembled monolayers/aggregated clusters of azobenzene derivatives in pentacene-based thin-film transistors. Tseng CW; Huang DC; Tao YT ACS Appl Mater Interfaces; 2012 Oct; 4(10):5483-91. PubMed ID: 22974132 [TBL] [Abstract][Full Text] [Related]
11. Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors. Quan H; Meng D; Ma X; Qiu C ACS Appl Mater Interfaces; 2023 Sep; 15(38):45076-45082. PubMed ID: 37721972 [TBL] [Abstract][Full Text] [Related]
12. Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film. Yang CF; Chen KH; Chen YC; Chang TC IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Sep; 54(9):1726-30. PubMed ID: 17941379 [TBL] [Abstract][Full Text] [Related]
13. Low Voltage Operating 2D MoS Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764 [TBL] [Abstract][Full Text] [Related]
15. Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers. Wang W; Hwang SK; Kim KL; Lee JH; Cho SM; Park C ACS Appl Mater Interfaces; 2015 May; 7(20):10957-65. PubMed ID: 25943406 [TBL] [Abstract][Full Text] [Related]
16. Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density. Panzer MJ; Frisbie CD J Am Chem Soc; 2007 May; 129(20):6599-607. PubMed ID: 17472381 [TBL] [Abstract][Full Text] [Related]
17. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor. Park N; Kang H; Park J; Lee Y; Yun Y; Lee JH; Lee SG; Lee YH; Suh D ACS Nano; 2015 Nov; 9(11):10729-36. PubMed ID: 26487348 [TBL] [Abstract][Full Text] [Related]
18. Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors. Noh EK; Boampong A; Konno Y; Shibasaki Y; Lee JH; Choi Y; Kim MH Materials (Basel); 2021 Mar; 14(5):. PubMed ID: 33800191 [TBL] [Abstract][Full Text] [Related]
19. Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation. Sun H; Wang Q; Li Y; Lin YF; Wang Y; Yin Y; Xu Y; Liu C; Tsukagoshi K; Pan L; Wang X; Hu Z; Shi Y Sci Rep; 2014 Nov; 4():7227. PubMed ID: 25428665 [TBL] [Abstract][Full Text] [Related]
20. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators. Sun YL; Xie D; Xu JL; Zhang C; Dai RX; Li X; Meng XJ; Zhu HW Sci Rep; 2016 Mar; 6():23090. PubMed ID: 26980284 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]