These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

110 related articles for article (PubMed ID: 24334566)

  • 21. Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys.
    Park JS; Chang KJ
    J Phys Condens Matter; 2013 Jun; 25(24):245801. PubMed ID: 23709500
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
    Godet J; Giustino F; Pasquarello A
    Phys Rev Lett; 2007 Sep; 99(12):126102. PubMed ID: 17930523
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Limits on passivating defects in semiconductors: the case of Si edge dislocations.
    Chan TL; West D; Zhang SB
    Phys Rev Lett; 2011 Jul; 107(3):035503. PubMed ID: 21838376
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.
    Burton JD; Tsymbal EY
    Phys Rev Lett; 2011 Apr; 106(15):157203. PubMed ID: 21568608
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Interface effects on acceptor qubits in silicon and germanium.
    Abadillo-Uriel JC; Calderón MJ
    Nanotechnology; 2016 Jan; 27(2):024003. PubMed ID: 26618443
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Electrically deactivating nearest-neighbor donor-pair defects in Si.
    Kim YS; Lee EC; Chang KJ
    Phys Rev Lett; 2003 Sep; 91(12):125503. PubMed ID: 14525372
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Structure and energetics of the Si- SiO2 interface.
    Tu Y; Tersoff J
    Phys Rev Lett; 2000 May; 84(19):4393-6. PubMed ID: 10990694
    [TBL] [Abstract][Full Text] [Related]  

  • 28. A computational investigation of nickel (silicides) as potential contact layers for silicon photovoltaic cells.
    Butler KT; Harding JH
    J Phys Condens Matter; 2013 Oct; 25(39):395003. PubMed ID: 23999021
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films.
    Pandey SC; Singh T; Maroudas D
    J Chem Phys; 2009 Jul; 131(3):034503. PubMed ID: 19624205
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Gold nanoparticles on oxide-free silicon-molecule interface for single electron transport.
    Caillard L; Seitz O; Campbell PM; Doherty RP; Lamic-Humblot AF; Lacaze E; Chabal YJ; Pluchery O
    Langmuir; 2013 Apr; 29(16):5066-73. PubMed ID: 23488728
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Infrared spectra at surfaces and interfaces from first principles: evolution of the spectra across the Si(100)-SiO2 interface.
    Giustino F; Pasquarello A
    Phys Rev Lett; 2005 Oct; 95(18):187402. PubMed ID: 16383945
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Understanding the clean interface between covalent Si and ionic Al2O3.
    Xiang HJ; Da Silva JL; Branz HM; Wei SH
    Phys Rev Lett; 2009 Sep; 103(11):116101. PubMed ID: 19792386
    [TBL] [Abstract][Full Text] [Related]  

  • 33. The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.
    Keizer JG; McKibbin SR; Simmons MY
    ACS Nano; 2015 Jul; 9(7):7080-4. PubMed ID: 26083628
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Retarded dopant diffusion by moderated dopant-dopant interactions in Si nanowires.
    Kim J; Hong KH
    Phys Chem Chem Phys; 2015 Jan; 17(3):1575-9. PubMed ID: 25483151
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.
    Wang S; Dhar S; Wang SR; Ahyi AC; Franceschetti A; Williams JR; Feldman LC; Pantelides ST
    Phys Rev Lett; 2007 Jan; 98(2):026101. PubMed ID: 17358620
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Electronic properties of the Si/SiO2 interface from first principles.
    Neaton JB; Muller DA; Ashcroft NW
    Phys Rev Lett; 2000 Aug; 85(6):1298-301. PubMed ID: 10991536
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell.
    Hong SH; Kim YS; Lee W; Kim YH; Song JY; Jang JS; Park JH; Choi SH; Kim KJ
    Nanotechnology; 2011 Oct; 22(42):425203. PubMed ID: 21941033
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Hybrids of organic molecules and flat, oxide-free silicon: high-density monolayers, electronic properties, and functionalization.
    Li Y; Calder S; Yaffe O; Cahen D; Haick H; Kronik L; Zuilhof H
    Langmuir; 2012 Jul; 28(26):9920-9. PubMed ID: 22587009
    [TBL] [Abstract][Full Text] [Related]  

  • 39. The interface between silicon and a high-k oxide.
    Först CJ; Ashman CR; Schwarz K; Blöchl PE
    Nature; 2004 Jan; 427(6969):53-6. PubMed ID: 14702081
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Probing dopant segregation in distinct cation sites at perovskite oxide polycrystal interfaces.
    Yoon HI; Lee DK; Bae HB; Jo GY; Chung HS; Kim JG; Kang SL; Chung SY
    Nat Commun; 2017 Nov; 8(1):1417. PubMed ID: 29127289
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.