These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

182 related articles for article (PubMed ID: 24345726)

  • 1. Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation.
    Sydoruk VA; Goß K; Meyer C; Petrychuk MV; Danilchenko BA; Weber P; Stampfer C; Li J; Vitusevich SA
    Nanotechnology; 2014 Jan; 25(3):035703. PubMed ID: 24345726
    [TBL] [Abstract][Full Text] [Related]  

  • 2. DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
    Kim S; Kim S; Janes DB; Mohammadi S; Back J; Shim M
    Nanotechnology; 2010 Sep; 21(38):385203. PubMed ID: 20798468
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors.
    Zhu M; Zhou J; Sun P; Peng LM; Zhang Z
    ACS Appl Mater Interfaces; 2021 Oct; 13(40):47756-47763. PubMed ID: 34581560
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors.
    Li Q; Li S; Yang D; Su W; Wang Y; Zhou W; Liu H; Xie S
    Nanotechnology; 2017 Oct; 28(43):435203. PubMed ID: 28832342
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effect of Dielectric Interface on the Performance of MoS
    Li X; Xiong X; Li T; Li S; Zhang Z; Wu Y
    ACS Appl Mater Interfaces; 2017 Dec; 9(51):44602-44608. PubMed ID: 29199423
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
    ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.
    Na J; Joo MK; Shin M; Huh J; Kim JS; Piao M; Jin JE; Jang HK; Choi HJ; Shim JH; Kim GT
    Nanoscale; 2014 Jan; 6(1):433-41. PubMed ID: 24212201
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation.
    Hong WK; Lee C; Nepal D; Geckeler KE; Shin K; Lee T
    Nanotechnology; 2006 Nov; 17(22):5675-80. PubMed ID: 21727341
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Trap density probing on top-gate MoS₂ nanosheet field-effect transistors by photo-excited charge collection spectroscopy.
    Choi K; Raza SR; Lee HS; Jeon PJ; Pezeshki A; Min SW; Kim JS; Yoon W; Ju SY; Lee K; Im S
    Nanoscale; 2015 Mar; 7(13):5617-23. PubMed ID: 25757452
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface.
    Lee SH; Xu Y; Khim D; Park WT; Kim DY; Noh YY
    ACS Appl Mater Interfaces; 2016 Nov; 8(47):32421-32431. PubMed ID: 27933829
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors.
    Luo M; Zhu M; Wei M; Shao S; Robin M; Wei C; Cui Z; Zhao J; Zhang Z
    ACS Appl Mater Interfaces; 2020 Nov; 12(44):49963-49970. PubMed ID: 33095560
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Global and local charge trapping in carbon nanotube field-effect transistors.
    Li H; Zhang Q; Marzari N
    Nanotechnology; 2008 Apr; 19(17):175203. PubMed ID: 21825664
    [TBL] [Abstract][Full Text] [Related]  

  • 13. A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay.
    Svensson J; Tarakanov Y; Lee DS; Kinaret JM; Park YW; Campbell EE
    Nanotechnology; 2008 Aug; 19(32):325201. PubMed ID: 21828807
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.
    Ding L; Wang Z; Pei T; Zhang Z; Wang S; Xu H; Peng F; Li Y; Peng LM
    ACS Nano; 2011 Apr; 5(4):2512-9. PubMed ID: 21370813
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material.
    Xian X; Yan K; Zhou W; Jiao L; Wu Z; Liu Z
    Nanotechnology; 2009 Dec; 20(50):505204. PubMed ID: 19923654
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.
    Sharma D; Amani M; Motayed A; Shah PB; Birdwell AG; Najmaei S; Ajayan PM; Lou J; Dubey M; Li Q; Davydov AV
    Nanotechnology; 2014 Apr; 25(15):155702. PubMed ID: 24642948
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors.
    Xie W; Prabhumirashi PL; Nakayama Y; McGarry KA; Geier ML; Uragami Y; Mase K; Douglas CJ; Ishii H; Hersam MC; Frisbie CD
    ACS Nano; 2013 Nov; 7(11):10245-56. PubMed ID: 24175573
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors.
    An Y; Lee H; Ko J; Yang HI; Min G; Kim DM; Kim DH; Bae JH; Kang MH; Choi SJ
    ACS Appl Mater Interfaces; 2024 Feb; 16(5):6221-6227. PubMed ID: 38270589
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
    Min SW; Lee HS; Choi HJ; Park MK; Nam T; Kim H; Ryu S; Im S
    Nanoscale; 2013 Jan; 5(2):548-51. PubMed ID: 23233087
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.
    Opoku C; Hoettges KF; Hughes MP; Stolojan V; Silva SR; Shkunov M
    Nanotechnology; 2013 Oct; 24(40):405203. PubMed ID: 24029562
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.