These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

178 related articles for article (PubMed ID: 24355799)

  • 1. Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k·p Hamiltonian.
    Marquardt O; O'Reilly EP; Schulz S
    J Phys Condens Matter; 2014 Jan; 26(3):035303. PubMed ID: 24355799
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations.
    Usman M; Tan YH; Ryu H; Ahmed SS; Krenner HJ; Boykin TB; Klimeck G
    Nanotechnology; 2011 Aug; 22(31):315709. PubMed ID: 21737873
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Numerical simulation of electronic properties of coupled quantum dots on wetting layers.
    Betcke MM; Voss H
    Nanotechnology; 2008 Apr; 19(16):165204. PubMed ID: 21825638
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.
    Wong PS; Liang BL; Dorogan VG; Albrecht AR; Tatebayashi J; He X; Nuntawong N; Mazur YI; Salamo GJ; Brueck SR; Huffaker DL
    Nanotechnology; 2008 Oct; 19(43):435710. PubMed ID: 21832714
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.
    Shen J; Song Y; Lee ML; Cha JJ
    Nanotechnology; 2014 Nov; 25(46):465702. PubMed ID: 25354930
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires.
    Rosini M; Magri R
    ACS Nano; 2010 Oct; 4(10):6021-31. PubMed ID: 20853868
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Valence band mixing of cubic GaN/AlN quantum dots.
    Segarra C; Climente JI; Planelles J
    J Phys Condens Matter; 2012 Mar; 24(11):115801. PubMed ID: 22353784
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Tuning quantum dot luminescence below the bulk band gap using tensile strain.
    Simmonds PJ; Yerino CD; Sun M; Liang B; Huffaker DL; Dorogan VG; Mazur Y; Salamo G; Lee ML
    ACS Nano; 2013 Jun; 7(6):5017-23. PubMed ID: 23701255
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots.
    Kim DJ; Yang H
    Nanotechnology; 2008 Nov; 19(47):475601. PubMed ID: 21836276
    [TBL] [Abstract][Full Text] [Related]  

  • 10. The fine structure of two-electron states in single and double quantum dots.
    Glazov MM
    J Phys Condens Matter; 2010 Jan; 22(2):025301. PubMed ID: 21386248
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer.
    Sabaeian M; Khaledi-Nasab A
    Appl Opt; 2012 Jun; 51(18):4176-85. PubMed ID: 22722295
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core-multishell quantum well heterostructures.
    Yan X; Zhang X; Li J; Wu Y; Cui J; Ren X
    Nanoscale; 2015 Jan; 7(3):1110-5. PubMed ID: 25482135
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition.
    Lytvyn PM; Mazur YI; Marega E; Dorogan VG; Kladko VP; Slobodian MV; Strelchuk VV; Hussein ML; Ware ME; Salamo GJ
    Nanotechnology; 2008 Dec; 19(50):505605. PubMed ID: 19942777
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Importance of second-order piezoelectric effects in zinc-blende semiconductors.
    Bester G; Wu X; Vanderbilt D; Zunger A
    Phys Rev Lett; 2006 May; 96(18):187602. PubMed ID: 16712396
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy.
    Ketterer B; Heiss M; Uccelli E; Arbiol J; i Morral AF
    ACS Nano; 2011 Sep; 5(9):7585-92. PubMed ID: 21838304
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.
    Zieliński M
    J Phys Condens Matter; 2013 Nov; 25(46):465301. PubMed ID: 24129261
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Magnetic properties of CrSb compounds with zinc-blende and wurtzite structures.
    Kuhn G; Polesya S; Mankovsky S; Minár J; Ebert H; Regus M; Bensch W
    J Phys Condens Matter; 2012 Aug; 24(30):306005. PubMed ID: 22771910
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking.
    Arbiol J; Estradé S; Prades JD; Cirera A; Furtmayr F; Stark C; Laufer A; Stutzmann M; Eickhoff M; Gass MH; Bleloch AL; Peiró F; Morante JR
    Nanotechnology; 2009 Apr; 20(14):145704. PubMed ID: 19420534
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Computational studies of semiconductor quantum dots.
    Lehtonen O; Sundholm D; Vänskä T
    Phys Chem Chem Phys; 2008 Aug; 10(31):4535-50. PubMed ID: 18665302
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells.
    Dong H; Sun J; Ma S; Liang J; Lu T; Liu X; Xu B
    Nanoscale; 2016 Mar; 8(11):6043-56. PubMed ID: 26926840
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.