These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
155 related articles for article (PubMed ID: 24506161)
1. DNA-base guanine as hydrogen getter and charge-trapping layer embedded in oxide dielectrics for inorganic and organic field-effect transistors. Lee J; Park JH; Lee YT; Jeon PJ; Lee HS; Nam SH; Yi Y; Lee Y; Im S ACS Appl Mater Interfaces; 2014 Apr; 6(7):4965-73. PubMed ID: 24506161 [TBL] [Abstract][Full Text] [Related]
2. Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer. Lee J; Hwang H; Min SW; Shin JM; Kim JS; Jeon PJ; Lee HS; Im S ACS Appl Mater Interfaces; 2015 Jan; 7(3):1765-71. PubMed ID: 25537523 [TBL] [Abstract][Full Text] [Related]
3. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics. Yoon A; Hong WK; Lee T J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128 [TBL] [Abstract][Full Text] [Related]
4. Inkjet printed, high mobility inorganic-oxide field effect transistors processed at room temperature. Dasgupta S; Kruk R; Mechau N; Hahn H ACS Nano; 2011 Dec; 5(12):9628-38. PubMed ID: 22077094 [TBL] [Abstract][Full Text] [Related]
5. Accurate Threshold Voltage Reliability Evaluation of Thin Al Goyal N; Parihar N; Jawa H; Mahapatra S; Lodha S ACS Appl Mater Interfaces; 2019 Jul; 11(26):23673-23680. PubMed ID: 31252490 [TBL] [Abstract][Full Text] [Related]
6. Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors. Kim DK; Lai Y; Vemulkar TR; Kagan CR ACS Nano; 2011 Dec; 5(12):10074-83. PubMed ID: 22084980 [TBL] [Abstract][Full Text] [Related]
8. Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook. Laudari A; Barron J; Pickett A; Guha S ACS Appl Mater Interfaces; 2020 Jun; 12(24):26757-26775. PubMed ID: 32436693 [TBL] [Abstract][Full Text] [Related]
9. Change in electronic states in the accumulation layer at interfaces in a poly(3-hexylthiophene) field-effect transistor and the impact of encapsulation. Park B; Kim YJ; Graham S; Reichmanis E ACS Appl Mater Interfaces; 2011 Sep; 3(9):3545-51. PubMed ID: 21863841 [TBL] [Abstract][Full Text] [Related]
10. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress. Kim SS; Choi PH; Baek DH; Lee JH; Choi BD J Nanosci Nanotechnol; 2015 Oct; 15(10):7555-8. PubMed ID: 26726370 [TBL] [Abstract][Full Text] [Related]
11. Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons. Yoon J; Hong WK; Jo M; Jo G; Choe M; Park W; Sohn JI; Nedic S; Hwang H; Welland ME; Lee T ACS Nano; 2011 Jan; 5(1):558-64. PubMed ID: 21155534 [TBL] [Abstract][Full Text] [Related]
12. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585 [TBL] [Abstract][Full Text] [Related]
13. Double-proton transfer in adenine-thymine and guanine-cytosine base pairs. A post-Hartree-Fock ab initio study. Gorb L; Podolyan Y; Dziekonski P; Sokalski WA; Leszczynski J J Am Chem Soc; 2004 Aug; 126(32):10119-29. PubMed ID: 15303888 [TBL] [Abstract][Full Text] [Related]
14. Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics. Kim BJ; Ko Y; Cho JH; Cho J Small; 2013 Nov; 9(22):3784-91. PubMed ID: 23666682 [TBL] [Abstract][Full Text] [Related]
15. ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes. Keem K; Kang J; Yoon C; Yeom D; Jeong DY; Park B; Park J; Kim S J Nanosci Nanotechnol; 2009 Jul; 9(7):4240-3. PubMed ID: 19916437 [TBL] [Abstract][Full Text] [Related]
16. Organic transistor memory with a charge storage molecular double-floating-gate monolayer. Tseng CW; Huang DC; Tao YT ACS Appl Mater Interfaces; 2015 May; 7(18):9767-75. PubMed ID: 25875747 [TBL] [Abstract][Full Text] [Related]
17. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics. Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566 [TBL] [Abstract][Full Text] [Related]
18. pH sensing characteristics and biosensing application of solution-gated reduced graphene oxide field-effect transistors. Sohn IY; Kim DJ; Jung JH; Yoon OJ; Thanh TN; Quang TT; Lee NE Biosens Bioelectron; 2013 Jul; 45():70-6. PubMed ID: 23454740 [TBL] [Abstract][Full Text] [Related]
19. Strikingly different effects of hydrogen bonding on the photodynamics of individual nucleobases in DNA: comparison of guanine and cytosine. Zelený T; Ruckenbauer M; Aquino AJ; Müller T; Lankaš F; Dršata T; Hase WL; Nachtigallova D; Lischka H J Am Chem Soc; 2012 Aug; 134(33):13662-9. PubMed ID: 22845192 [TBL] [Abstract][Full Text] [Related]
20. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Kim S; Kim S; Janes DB; Mohammadi S; Back J; Shim M Nanotechnology; 2010 Sep; 21(38):385203. PubMed ID: 20798468 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]