These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

109 related articles for article (PubMed ID: 24547762)

  • 1. Enhanced device performance of germanium nanowire junctionless (GeNW-JL) MOSFETs by germanide contact formation with Ar plasma treatment.
    Yoon YG; Kim TK; Hwang IC; Lee HS; Hwang BW; Moon JM; Seo YJ; Lee SW; Jo MH; Lee SH
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3150-5. PubMed ID: 24547762
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Ferromagnetic germanide in Ge nanowire transistors for spintronics application.
    Tang J; Wang CY; Hung MH; Jiang X; Chang LT; He L; Liu PH; Yang HJ; Tuan HY; Chen LJ; Wang KL
    ACS Nano; 2012 Jun; 6(6):5710-7. PubMed ID: 22658951
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.
    Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL
    ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Junctionless Structure Indium-Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability.
    Jeon SP; Jo JW; Nam D; Kang DW; Kim YH; Park SK
    ACS Appl Mater Interfaces; 2024 Jul; 16(29):38198-38207. PubMed ID: 38981083
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.
    Tang J; Wang CY; Xiu F; Hong AJ; Chen S; Wang M; Zeng C; Yang HJ; Tuan HY; Tsai CJ; Chen LJ; Wang KL
    Nanotechnology; 2010 Dec; 21(50):505704. PubMed ID: 21098938
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation.
    Burchhart T; Zeiner C; Lugstein A; Henkel C; Bertagnolli E
    Nanotechnology; 2011 Jan; 22(3):035201. PubMed ID: 21149968
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors.
    Burchhart T; Lugstein A; Hyun YJ; Hochleitner G; Bertagnolli E
    Nano Lett; 2009 Nov; 9(11):3739-42. PubMed ID: 19691284
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low-contact-resistance graphene devices with nickel-etched-graphene contacts.
    Leong WS; Gong H; Thong JT
    ACS Nano; 2014 Jan; 8(1):994-1001. PubMed ID: 24328346
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Parallel core-shell metal-dielectric-semiconductor germanium nanowires for high-current surround-gate field-effect transistors.
    Zhang L; Tu R; Dai H
    Nano Lett; 2006 Dec; 6(12):2785-9. PubMed ID: 17163706
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Defect-free erbium silicide formation using an ultrathin Ni interlayer.
    Choi J; Choi S; Kang YS; Na S; Lee HJ; Cho MH; Kim H
    ACS Appl Mater Interfaces; 2014 Aug; 6(16):14712-7. PubMed ID: 25093916
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Syntaxial growth of Ge/Mn-germanide nanowire heterostructures.
    Lensch-Falk JL; Hemesath ER; Lauhon LJ
    Nano Lett; 2008 Sep; 8(9):2669-73. PubMed ID: 18698729
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effect of oxygen plasma treatment on crystal growth mode at pentacene/Ni interface in organic thin-film transistors.
    Song BJ; Hong K; Kim WK; Kim K; Kim S; Lee JL
    J Phys Chem B; 2010 Nov; 114(46):14854-9. PubMed ID: 21028765
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhanced morphological and thermal stabilities of nickel germanide with an ultrathin tantalum layer studied by ex situ and in situ transmission electron microscopy.
    Lee JW; Kim HK; Bae JH; Park MH; Kim H; Ryu J; Yang CW
    Microsc Microanal; 2013 Aug; 19 Suppl 5():114-8. PubMed ID: 23920187
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Ge/Si nanowire heterostructures as high-performance field-effect transistors.
    Xiang J; Lu W; Hu Y; Wu Y; Yan H; Lieber CM
    Nature; 2006 May; 441(7092):489-93. PubMed ID: 16724062
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance.
    Chang HM; Charnas A; Lin YM; Ye PD; Wu CI; Wu CH
    Sci Rep; 2017 Dec; 7(1):16857. PubMed ID: 29203831
    [TBL] [Abstract][Full Text] [Related]  

  • 16. N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.
    Fang YC; Chen KY; Hsieh CH; Su CC; Wu YH
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26374-80. PubMed ID: 26579560
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires.
    Yan C; Higgins JM; Faber MS; Lee PS; Jin S
    ACS Nano; 2011 Jun; 5(6):5006-14. PubMed ID: 21539374
    [TBL] [Abstract][Full Text] [Related]  

  • 18. High-Performance WS
    Jin L; Wen J; Odlyzko M; Seaton N; Li R; Haratipour N; Koester SJ
    ACS Omega; 2024 Jul; 9(29):32159-32166. PubMed ID: 39072129
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Growth and evolution of nickel germanide nanostructures on Ge(001).
    Grzela T; Capellini G; Koczorowski W; Schubert MA; Czajka R; Curson NJ; Heidmann I; Schmidt T; Falta J; Schroeder T
    Nanotechnology; 2015 Sep; 26(38):385701. PubMed ID: 26335383
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Solution-processed germanium nanowire-positioned Schottky solar cells.
    Yun JH; Park YC; Kim J; Lee HJ; Anderson WA; Park J
    Nanoscale Res Lett; 2011 Apr; 6(1):287. PubMed ID: 21711797
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.