These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

310 related articles for article (PubMed ID: 24571386)

  • 21. Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors.
    Raeis-Hosseini N; Lee JS
    ACS Appl Mater Interfaces; 2016 Mar; 8(11):7326-32. PubMed ID: 26919221
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Three-Dimensional Reconstruction of Conductive Filaments in HfO
    Wei T; Lu Y; Zhang F; Tang J; Gao B; Yu P; Qian H; Wu H
    Adv Mater; 2023 Mar; 35(10):e2209925. PubMed ID: 36517930
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Cationic Interstitials: An Overlooked Ionic Defect in Memristors.
    Xu Z; Guan P; Ji T; Hu Y; Li Z; Wang W; Xu N
    Front Chem; 2022; 10():944029. PubMed ID: 35873039
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Deterministic Conductive Filament Formation and Evolution for Improved Switching Uniformity in Embedded Metal-Oxide-Based Memristors─A Phase-Field Study.
    Zhang K; Ganesh P; Cao Y
    ACS Appl Mater Interfaces; 2023 May; 15(17):21219-21227. PubMed ID: 37083295
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.
    Huang Y; Yu J; Kong Y; Wang X
    RSC Adv; 2022 Nov; 12(52):33634-33640. PubMed ID: 36505707
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices.
    Dirkmann S; Kaiser J; Wenger C; Mussenbrock T
    ACS Appl Mater Interfaces; 2018 May; 10(17):14857-14868. PubMed ID: 29601180
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Vacancy-Induced Synaptic Behavior in 2D WS
    Yan X; Zhao Q; Chen AP; Zhao J; Zhou Z; Wang J; Wang H; Zhang L; Li X; Xiao Z; Wang K; Qin C; Wang G; Pei Y; Li H; Ren D; Chen J; Liu Q
    Small; 2019 Jun; 15(24):e1901423. PubMed ID: 31045332
    [TBL] [Abstract][Full Text] [Related]  

  • 28. MoS
    Li D; Wu B; Zhu X; Wang J; Ryu B; Lu WD; Lu W; Liang X
    ACS Nano; 2018 Sep; 12(9):9240-9252. PubMed ID: 30192507
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Ferroelectric tunnel memristor.
    Kim DJ; Lu H; Ryu S; Bark CW; Eom CB; Tsymbal EY; Gruverman A
    Nano Lett; 2012 Nov; 12(11):5697-702. PubMed ID: 23039785
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing.
    Wang Z; Yin M; Zhang T; Cai Y; Wang Y; Yang Y; Huang R
    Nanoscale; 2016 Aug; 8(29):14015-22. PubMed ID: 27143476
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Memristor models for machine learning.
    Carbajal JP; Dambre J; Hermans M; Schrauwen B
    Neural Comput; 2015 Mar; 27(3):725-47. PubMed ID: 25602769
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Low-Power Memristor Based on Two-Dimensional Materials.
    Duan H; Cheng S; Qin L; Zhang X; Xie B; Zhang Y; Jie W
    J Phys Chem Lett; 2022 Aug; 13(31):7130-7138. PubMed ID: 35900941
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure.
    Kim J; Inamdar AI; Jo Y; Woo H; Cho S; Pawar SM; Kim H; Im H
    ACS Appl Mater Interfaces; 2016 Apr; 8(14):9499-505. PubMed ID: 27007722
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Silver/(sub-10 nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism.
    Saylan S; Jaoude MA; Humood K; Ravaux F; Shehhi HFA; Mohammad B
    Nanotechnology; 2020 Apr; 31(16):165202. PubMed ID: 31914429
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Resistive Switching Memory Devices Based on Body Fluid of
    Wang L; Wen D
    Micromachines (Basel); 2019 Aug; 10(8):. PubMed ID: 31426438
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Artificial Synapse Based on a 2D-SnO
    Huang CH; Chang H; Yang TY; Wang YC; Chueh YL; Nomura K
    ACS Appl Mater Interfaces; 2021 Nov; 13(44):52822-52832. PubMed ID: 34714053
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Excellent Bipolar Resistive Switching Characteristics of Bi
    Zhou HC; Jiang YP; Tang XG; Liu QX; Li WH; Tang ZH
    Nanomaterials (Basel); 2021 Oct; 11(10):. PubMed ID: 34685146
    [TBL] [Abstract][Full Text] [Related]  

  • 38. A carbon-based memristor design for associative learning activities and neuromorphic computing.
    Pei Y; Zhou Z; Chen AP; Chen J; Yan X
    Nanoscale; 2020 Jul; 12(25):13531-13539. PubMed ID: 32555882
    [TBL] [Abstract][Full Text] [Related]  

  • 39. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation.
    Min SY; Cho WJ
    Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33922130
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Nonvolatile bio-memristor fabricated with egg albumen film.
    Chen YC; Yu HC; Huang CY; Chung WL; Wu SL; Su YK
    Sci Rep; 2015 May; 5():10022. PubMed ID: 25950812
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 16.