198 related articles for article (PubMed ID: 24599538)
1. Boron nitride film as a buffer layer in deposition of dielectrics on graphene.
Han Q; Yan B; Gao T; Meng J; Zhang Y; Liu Z; Wu X; Yu D
Small; 2014 Jun; 10(11):2293-9. PubMed ID: 24599538
[TBL] [Abstract][Full Text] [Related]
2. In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition.
Wu Q; Jang SK; Park S; Jung SJ; Suh H; Lee YH; Lee S; Song YJ
Nanoscale; 2015 May; 7(17):7574-9. PubMed ID: 25864409
[TBL] [Abstract][Full Text] [Related]
3. Functionalized graphene as an ultrathin seed layer for the atomic layer deposition of conformal high-k dielectrics on graphene.
Shin WC; Bong JH; Choi SY; Cho BJ
ACS Appl Mater Interfaces; 2013 Nov; 5(22):11515-9. PubMed ID: 24171487
[TBL] [Abstract][Full Text] [Related]
4. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies.
Park S; Park C; Kim G
J Chem Phys; 2014 Apr; 140(13):134706. PubMed ID: 24712807
[TBL] [Abstract][Full Text] [Related]
5. Fabrication of transferable Al(2)O(3) nanosheet by atomic layer deposition for graphene FET.
Jung H; Park J; Oh IK; Choi T; Lee S; Hong J; Lee T; Kim SH; Kim H
ACS Appl Mater Interfaces; 2014 Feb; 6(4):2764-9. PubMed ID: 24483324
[TBL] [Abstract][Full Text] [Related]
6. Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.
Kim KK; Hsu A; Jia X; Kim SM; Shi Y; Dresselhaus M; Palacios T; Kong J
ACS Nano; 2012 Oct; 6(10):8583-90. PubMed ID: 22970651
[TBL] [Abstract][Full Text] [Related]
7. Seeding atomic layer deposition of alumina on graphene with yttria.
Dahal A; Addou R; Azcatl A; Coy-Diaz H; Lu N; Peng X; de Dios F; Kim J; Kim MJ; Wallace RM; Batzill M
ACS Appl Mater Interfaces; 2015 Jan; 7(3):2082-7. PubMed ID: 25556522
[TBL] [Abstract][Full Text] [Related]
8. Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers.
Gong Y; Shi G; Zhang Z; Zhou W; Jung J; Gao W; Ma L; Yang Y; Yang S; You G; Vajtai R; Xu Q; MacDonald AH; Yakobson BI; Lou J; Liu Z; Ajayan PM
Nat Commun; 2014; 5():3193. PubMed ID: 24458370
[TBL] [Abstract][Full Text] [Related]
9. Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride.
Liu Z; Gong Y; Zhou W; Ma L; Yu J; Idrobo JC; Jung J; MacDonald AH; Vajtai R; Lou J; Ajayan PM
Nat Commun; 2013; 4():2541. PubMed ID: 24092019
[TBL] [Abstract][Full Text] [Related]
10. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.
Lee KH; Shin HJ; Kumar B; Kim HS; Lee J; Bhatia R; Kim SH; Lee IY; Lee HS; Kim GH; Yoo JB; Choi JY; Kim SW
Angew Chem Int Ed Engl; 2014 Oct; 53(43):11493-7. PubMed ID: 25204810
[TBL] [Abstract][Full Text] [Related]
11. Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.
Jang AR; Hong S; Hyun C; Yoon SI; Kim G; Jeong HY; Shin TJ; Park SO; Wong K; Kwak SK; Park N; Yu K; Choi E; Mishchenko A; Withers F; Novoselov KS; Lim H; Shin HS
Nano Lett; 2016 May; 16(5):3360-6. PubMed ID: 27120101
[TBL] [Abstract][Full Text] [Related]
12. Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers.
Bresnehan MS; Bhimanapati GR; Wang K; Snyder DW; Robinson JA
ACS Appl Mater Interfaces; 2014 Oct; 6(19):16755-62. PubMed ID: 25197772
[TBL] [Abstract][Full Text] [Related]
13. Graphene on hexagonal boron nitride.
Yankowitz M; Xue J; LeRoy BJ
J Phys Condens Matter; 2014 Jul; 26(30):303201. PubMed ID: 24994551
[TBL] [Abstract][Full Text] [Related]
14. Scalable synthesis of uniform few-layer hexagonal boron nitride dielectric films.
Sutter P; Lahiri J; Zahl P; Wang B; Sutter E
Nano Lett; 2013 Jan; 13(1):276-81. PubMed ID: 23244762
[TBL] [Abstract][Full Text] [Related]
15. Optical probing of the electronic interaction between graphene and hexagonal boron nitride.
Ahn G; Kim HR; Ko TY; Choi K; Watanabe K; Taniguchi T; Hong BH; Ryu S
ACS Nano; 2013 Feb; 7(2):1533-41. PubMed ID: 23301838
[TBL] [Abstract][Full Text] [Related]
16. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition.
Park H; Kim TK; Cho SW; Jang HS; Lee SI; Choi SY
Sci Rep; 2017 Jan; 7():40091. PubMed ID: 28054603
[TBL] [Abstract][Full Text] [Related]
17. Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone.
Jandhyala S; Mordi G; Lee B; Lee G; Floresca C; Cha PR; Ahn J; Wallace RM; Chabal YJ; Kim MJ; Colombo L; Cho K; Kim J
ACS Nano; 2012 Mar; 6(3):2722-30. PubMed ID: 22352388
[TBL] [Abstract][Full Text] [Related]
18. Damage evaluation in graphene underlying atomic layer deposition dielectrics.
Tang X; Reckinger N; Poncelet O; Louette P; Ureña F; Idrissi H; Turner S; Cabosart D; Colomer JF; Raskin JP; Hackens B; Francis LA
Sci Rep; 2015 Aug; 5():13523. PubMed ID: 26311131
[TBL] [Abstract][Full Text] [Related]
19. Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices.
Bresnehan MS; Hollander MJ; Wetherington M; LaBella M; Trumbull KA; Cavalero R; Snyder DW; Robinson JA
ACS Nano; 2012 Jun; 6(6):5234-41. PubMed ID: 22545808
[TBL] [Abstract][Full Text] [Related]
20. Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.
Xu H; Wu J; Chen Y; Zhang H; Zhang J
Chem Asian J; 2013 Oct; 8(10):2446-52. PubMed ID: 23840025
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
