These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
124 related articles for article (PubMed ID: 24663930)
1. Design and numerical analysis of surface plasmon-enhanced fin Ge-Si light-emitting diode. Jeong I; Kwon J; Kim C; Park YJ Opt Express; 2014 Mar; 22(5):5927-36. PubMed ID: 24663930 [TBL] [Abstract][Full Text] [Related]
2. Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport. Cho S; Park BG; Yang C; Cheung S; Yoon E; Kamins TI; Yoo SJ; Harris JS Opt Express; 2012 Jul; 20(14):14921-7. PubMed ID: 22772186 [TBL] [Abstract][Full Text] [Related]
3. Room-temperature electroluminescence from Si microdisks with Ge quantum dots. Xia J; Takeda Y; Usami N; Maruizumi T; Shiraki Y Opt Express; 2010 Jun; 18(13):13945-50. PubMed ID: 20588527 [TBL] [Abstract][Full Text] [Related]
4. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. Sun X; Liu J; Kimerling LC; Michel J Opt Lett; 2009 Apr; 34(8):1198-200. PubMed ID: 19370116 [TBL] [Abstract][Full Text] [Related]
5. Enhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor. Tani K; Oda K; Deura M; Ido T Opt Express; 2021 Feb; 29(3):3584-3595. PubMed ID: 33770955 [TBL] [Abstract][Full Text] [Related]
6. Waveguide-integrated microdisk light-emitting diode and photodetector based on Ge quantum dots. Xu X; Maruizumi T; Shiraki Y Opt Express; 2014 Feb; 22(4):3902-10. PubMed ID: 24663710 [TBL] [Abstract][Full Text] [Related]
7. Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates. Manna S; Aluguri R; Das S; Singha R; Ray SK Opt Express; 2013 Nov; 21(23):28219-31. PubMed ID: 24514333 [TBL] [Abstract][Full Text] [Related]
8. On-chip optical interconnection using integrated germanium light emitters and photodetectors. Tani K; Okumura T; Oda K; Deura M; Ido T Opt Express; 2021 Aug; 29(18):28021-28036. PubMed ID: 34614942 [TBL] [Abstract][Full Text] [Related]
9. Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface. Zhang N; Yan J; Wang L; Zhang J; Zhang Z; Miao T; Zheng C; Jiang Z; Hu H; Zhong Z ACS Nano; 2024 Jan; 18(1):328-336. PubMed ID: 38147566 [TBL] [Abstract][Full Text] [Related]
10. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening. Li W; Wang S; Hu M; He S; Ge P; Wang J; Guo YY; Zhaowei L Sci Rep; 2015 Jul; 5():11881. PubMed ID: 26138830 [TBL] [Abstract][Full Text] [Related]
11. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection. Zimmler MA; Bao J; Shalish I; Yi W; Narayanamurti V; Capasso F Nanotechnology; 2007 Oct; 18(39):395201. PubMed ID: 21730412 [TBL] [Abstract][Full Text] [Related]
12. Strained germanium thin film membrane on silicon substrate for optoelectronics. Nam D; Sukhdeo D; Roy A; Balram K; Cheng SL; Huang KC; Yuan Z; Brongersma M; Nishi Y; Miller D; Saraswat K Opt Express; 2011 Dec; 19(27):25866-72. PubMed ID: 22274174 [TBL] [Abstract][Full Text] [Related]
13. Ge-on-Si laser operating at room temperature. Liu J; Sun X; Camacho-Aguilera R; Kimerling LC; Michel J Opt Lett; 2010 Mar; 35(5):679-81. PubMed ID: 20195317 [TBL] [Abstract][Full Text] [Related]
14. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities. Xu X; Tsuboi T; Chiba T; Usami N; Maruizumi T; Shiraki Y Opt Express; 2012 Jun; 20(13):14714-21. PubMed ID: 22714532 [TBL] [Abstract][Full Text] [Related]
16. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates. Katiyar AK; Sinha AK; Manna S; Ray SK ACS Appl Mater Interfaces; 2014 Sep; 6(17):15007-14. PubMed ID: 25137439 [TBL] [Abstract][Full Text] [Related]
17. Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering. Lin CH; Hsieh C; Tu CG; Kuo Y; Chen HS; Shih PY; Liao CH; Kiang YW; Yang CC; Lai CH; He GR; Yeh JH; Hsu TC Opt Express; 2014 May; 22 Suppl 3():A842-56. PubMed ID: 24922391 [TBL] [Abstract][Full Text] [Related]
18. Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding. Gity F; Daly A; Snyder B; Peters FH; Hayes J; Colinge C; Morrison AP; Corbett B Opt Express; 2013 Jul; 21(14):17309-14. PubMed ID: 23938577 [TBL] [Abstract][Full Text] [Related]
19. Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping. Liu Z; Hu W; Su S; Li C; Li C; Xue C; Li Y; Zuo Y; Cheng B; Wang Q Opt Express; 2012 Sep; 20(20):22327-33. PubMed ID: 23037381 [TBL] [Abstract][Full Text] [Related]
20. Simulation investigation of tensile strained GeSn fin photodetector with Si(3)N(4) liner stressor for extension of absorption wavelength. Zhang Q; Liu Y; Yan J; Zhang C; Hao Y; Han G Opt Express; 2015 Jan; 23(2):739-46. PubMed ID: 25835833 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]