382 related articles for article (PubMed ID: 24690823)
1. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J
Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823
[TBL] [Abstract][Full Text] [Related]
2. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.
Song H; Kim JS; Kim EK; Seo YG; Hwang SM
Nanotechnology; 2010 Apr; 21(13):134026. PubMed ID: 20208099
[TBL] [Abstract][Full Text] [Related]
3. Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires.
Johar MA; Song HG; Waseem A; Kang JH; Ha JS; Cho YH; Ryu SW
Nanoscale; 2019 Jun; 11(22):10932-10943. PubMed ID: 31139802
[TBL] [Abstract][Full Text] [Related]
4. Electrically driven green, olivine, and amber color nanopyramid light emitting diodes.
Chang SP; Chang JR; Sou KP; Liu MC; Cheng YJ; Kuo HC; Chang CY
Opt Express; 2013 Oct; 21(20):23030-5. PubMed ID: 24104218
[TBL] [Abstract][Full Text] [Related]
5. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
Liu W; Zhao DG; Jiang DS; Chen P; Liu ZS; Zhu JJ; Shi M; Zhao DM; Li X; Liu JP; Zhang SM; Wang H; Yang H; Zhang YT; Du GT
Opt Express; 2015 Jun; 23(12):15935-43. PubMed ID: 26193570
[TBL] [Abstract][Full Text] [Related]
6. The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures.
Koronski K; Korona KP; Kryvyi S; Wierzbicka A; Sobczak K; Krukowski S; Strak P; Monroy E; Kaminska A
Materials (Basel); 2022 Apr; 15(8):. PubMed ID: 35454453
[TBL] [Abstract][Full Text] [Related]
7. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.
Wang H; Ji Z; Qu S; Wang G; Jiang Y; Liu B; Xu X; Mino H
Opt Express; 2012 Feb; 20(4):3932-40. PubMed ID: 22418149
[TBL] [Abstract][Full Text] [Related]
8. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
[TBL] [Abstract][Full Text] [Related]
9. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.
Yeh TW; Lin YT; Stewart LS; Dapkus PD; Sarkissian R; O'Brien JD; Ahn B; Nutt SR
Nano Lett; 2012 Jun; 12(6):3257-62. PubMed ID: 22587013
[TBL] [Abstract][Full Text] [Related]
10. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes.
Dong P; Yan J; Zhang Y; Wang J; Geng C; Zheng H; Wei X; Yan Q; Li J
Opt Express; 2014 Mar; 22 Suppl 2():A320-7. PubMed ID: 24922241
[TBL] [Abstract][Full Text] [Related]
11. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.
Ji Q; Li L; Zhang W; Wang J; Liu P; Xie Y; Yan T; Yang W; Chen W; Hu X
ACS Appl Mater Interfaces; 2016 Aug; 8(33):21480-9. PubMed ID: 27484167
[TBL] [Abstract][Full Text] [Related]
12. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes.
Dong P; Yan J; Zhang Y; Wang J; Geng C; Zheng H; Wei X; Yan Q; Li J
Opt Express; 2014 Mar; 22(5):A320-7. PubMed ID: 24800288
[TBL] [Abstract][Full Text] [Related]
13. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.
Park JH; Mandal A; Kang S; Chatterjee U; Kim JS; Park BG; Kim MD; Jeong KU; Lee CR
Sci Rep; 2016 Aug; 6():31996. PubMed ID: 27556534
[TBL] [Abstract][Full Text] [Related]
14. Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N₂ plasma.
Ferreira JA; Nguyen HP; Mi Z; Leonelli R; Stafford L
Nanotechnology; 2014 Oct; 25(43):435606. PubMed ID: 25299752
[TBL] [Abstract][Full Text] [Related]
15. A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells.
Liu W; Liu Z; Zhao H; Gao J
Micromachines (Basel); 2023 Aug; 14(9):. PubMed ID: 37763832
[TBL] [Abstract][Full Text] [Related]
16. Toward highly radiative white light emitting nanostructures: a new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field.
Kim JH; Ko YH; Cho JH; Gong SH; Ko SM; Cho YH
Nanoscale; 2014 Nov; 6(23):14213-20. PubMed ID: 25225912
[TBL] [Abstract][Full Text] [Related]
17. Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate.
Johar MA; Waseem A; Hassan MA; Bagal IV; Abdullah A; Ha JS; Lee JK; Ryu SW
ACS Omega; 2020 Jul; 5(28):17753-17760. PubMed ID: 32715262
[TBL] [Abstract][Full Text] [Related]
18. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
[TBL] [Abstract][Full Text] [Related]
19. Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.
Zhu Y; Lu T; Zhou X; Zhao G; Dong H; Jia Z; Liu X; Xu B
Nanoscale Res Lett; 2017 Dec; 12(1):321. PubMed ID: 28472870
[TBL] [Abstract][Full Text] [Related]
20. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes.
Jeong H; Jeong HJ; Oh HM; Hong CH; Suh EK; Lerondel G; Jeong MS
Sci Rep; 2015 Mar; 5():9373. PubMed ID: 25792246
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]