138 related articles for article (PubMed ID: 24749438)
1. The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices.
Lee MC; Wong HY
J Nanosci Nanotechnol; 2014 Feb; 14(2):1508-20. PubMed ID: 24749438
[TBL] [Abstract][Full Text] [Related]
2. Memory applications and electrical bistability of semiconducting nanoparticles: do the phenomena depend on bandgap?
Das BC; Pal AJ
Small; 2008 May; 4(5):542-7. PubMed ID: 18421723
[No Abstract] [Full Text] [Related]
3. Modeling of the electrostatic coupling between nanocrystals of a disordered nanocrystal floating gate memory.
Armeanu D; Leroy Y; Cordan AS
Nanotechnology; 2012 Jun; 23(21):215203. PubMed ID: 22552024
[TBL] [Abstract][Full Text] [Related]
4. Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.
Sohn JI; Choi SS; Morris SM; Bendall JS; Coles HJ; Hong WK; Jo G; Lee T; Welland ME
Nano Lett; 2010 Nov; 10(11):4316-20. PubMed ID: 20945844
[TBL] [Abstract][Full Text] [Related]
5. Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes.
Muralidharan G; Bhat N; Santhanam V
Nanoscale; 2011 Nov; 3(11):4575-9. PubMed ID: 21987060
[TBL] [Abstract][Full Text] [Related]
6. Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution.
Medeiros-Ribeiro G; Perner F; Carter R; Abdalla H; Pickett MD; Williams RS
Nanotechnology; 2011 Mar; 22(9):095702. PubMed ID: 21258143
[TBL] [Abstract][Full Text] [Related]
7. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.
Pickett MD; Williams RS
Nanotechnology; 2012 Jun; 23(21):215202. PubMed ID: 22551985
[TBL] [Abstract][Full Text] [Related]
8. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.
Lee JS; Cho J; Lee C; Kim I; Park J; Kim YM; Shin H; Lee J; Caruso F
Nat Nanotechnol; 2007 Dec; 2(12):790-5. PubMed ID: 18654433
[TBL] [Abstract][Full Text] [Related]
9. Electrical characteristics of Ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma nitridation.
Okamoto G; Kutsuki K; Hosoi T; Shimura T; Watanabe H
J Nanosci Nanotechnol; 2011 Apr; 11(4):2856-60. PubMed ID: 21776643
[TBL] [Abstract][Full Text] [Related]
10. A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices.
An HM; Kim HD; Kim B; Kim TG
J Nanosci Nanotechnol; 2013 May; 13(5):3293-7. PubMed ID: 23858846
[TBL] [Abstract][Full Text] [Related]
11. Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.
Hirschmann J; Faber H; Halik M
Nanoscale; 2012 Jan; 4(2):444-7. PubMed ID: 22159764
[TBL] [Abstract][Full Text] [Related]
12. Emerging memories: resistive switching mechanisms and current status.
Jeong DS; Thomas R; Katiyar RS; Scott JF; Kohlstedt H; Petraru A; Hwang CS
Rep Prog Phys; 2012 Jul; 75(7):076502. PubMed ID: 22790779
[TBL] [Abstract][Full Text] [Related]
13. Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.
Yoon C; Jeon Y; Yun J; Kim S
J Nanosci Nanotechnol; 2012 Jan; 12(1):578-84. PubMed ID: 22524023
[TBL] [Abstract][Full Text] [Related]
14. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.
Kim KH; Gaba S; Wheeler D; Cruz-Albrecht JM; Hussain T; Srinivasa N; Lu W
Nano Lett; 2012 Jan; 12(1):389-95. PubMed ID: 22141918
[TBL] [Abstract][Full Text] [Related]
15. Photo-stimulated resistive switching of ZnO nanorods.
Park J; Lee S; Yong K
Nanotechnology; 2012 Sep; 23(38):385707. PubMed ID: 22948083
[TBL] [Abstract][Full Text] [Related]
16. Single electron charging in optically active nanowire quantum dots.
van Kouwen MP; Reimer ME; Hidma AW; van Weert MH; Algra RE; Bakkers EP; Kouwenhoven LP; Zwiller V
Nano Lett; 2010 May; 10(5):1817-22. PubMed ID: 20387798
[TBL] [Abstract][Full Text] [Related]
17. Nonvolatile memory cells based on MoS2/graphene heterostructures.
Bertolazzi S; Krasnozhon D; Kis A
ACS Nano; 2013 Apr; 7(4):3246-52. PubMed ID: 23510133
[TBL] [Abstract][Full Text] [Related]
18. Thin films: theory leads the way to new devices.
Ramesh R
Nat Nanotechnol; 2008 Jan; 3(1):7-8. PubMed ID: 18654438
[No Abstract] [Full Text] [Related]
19. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
Venugopal G; Kim SJ
J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
[TBL] [Abstract][Full Text] [Related]
20. Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
Tappertzhofen S; Valov I; Tsuruoka T; Hasegawa T; Waser R; Aono M
ACS Nano; 2013 Jul; 7(7):6396-402. PubMed ID: 23786236
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]