These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

120 related articles for article (PubMed ID: 24757947)

  • 1. Threshold voltage instability mechanisms of nitride based charge trap flash memory--a review.
    Lee MC; Wong HY
    J Nanosci Nanotechnol; 2014 Jul; 14(7):4799-812. PubMed ID: 24757947
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Future prospects of NAND flash memory technology--the evolution from floating gate to charge trapping to 3D stacking.
    Lu CY
    J Nanosci Nanotechnol; 2012 Oct; 12(10):7604-18. PubMed ID: 23421122
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices.
    Lee MC; Wong HY
    J Nanosci Nanotechnol; 2014 Feb; 14(2):1508-20. PubMed ID: 24749438
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash.
    Oh J; Na H; Park S; Sohn H
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6413-5. PubMed ID: 24205672
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Multi-level flash memory device based on stacked anisotropic ReS
    Wu E; Xie Y; Wang S; Zhang D; Hu X; Liu J
    Nanoscale; 2020 Sep; 12(36):18800-18806. PubMed ID: 32970061
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tunable charge-trap memory based on few-layer MoS2.
    Zhang E; Wang W; Zhang C; Jin Y; Zhu G; Sun Q; Zhang DW; Zhou P; Xiu F
    ACS Nano; 2015 Jan; 9(1):612-9. PubMed ID: 25496773
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.
    Kim J; Jang K; Phu NT; Trinh TT; Raja J; Kim T; Cho J; Kim S; Park J; Jung J; Lee YJ; Yi J
    J Nanosci Nanotechnol; 2016 May; 16(5):4984-8. PubMed ID: 27483856
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe
    Liu C; Yan X; Wang J; Ding S; Zhou P; Zhang DW
    Small; 2017 May; 13(17):. PubMed ID: 28218820
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Fabrication and characterization of twin poly-Si thin film transistors EEPROM with a nitride charge trapping layer.
    Hung MF; Wu YC; Chiang JH; Chen JH; Chen LC
    J Nanosci Nanotechnol; 2011 Dec; 11(12):10419-23. PubMed ID: 22408918
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory.
    Yang SD; Jung JK; Lim JG; Park SG; Lee HD; Lee GW
    Micromachines (Basel); 2019 May; 10(6):. PubMed ID: 31146426
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Graphene gate electrode for MOS structure-based electronic devices.
    Park JK; Song SM; Mun JH; Cho BJ
    Nano Lett; 2011 Dec; 11(12):5383-6. PubMed ID: 22059809
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Review of Semiconductor Flash Memory Devices for Material and Process Issues.
    Kim SS; Yong SK; Kim W; Kang S; Park HW; Yoon KJ; Sheen DS; Lee S; Hwang CS
    Adv Mater; 2023 Oct; 35(43):e2200659. PubMed ID: 35305277
    [TBL] [Abstract][Full Text] [Related]  

  • 13. ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.
    Sun CE; Chen CY; Chu KL; Shen YS; Lin CC; Wu YH
    ACS Appl Mater Interfaces; 2015 Apr; 7(12):6383-90. PubMed ID: 25781005
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si
    Wilhelmer C; Waldhoer D; Cvitkovich L; Milardovich D; Waltl M; Grasser T
    Nanomaterials (Basel); 2023 Aug; 13(16):. PubMed ID: 37630870
    [TBL] [Abstract][Full Text] [Related]  

  • 15. A novel polysilicon field-enhanced nanowire thin-film transistor with the TiN-hafnia-nitride-vacuum-silicon (THNVAS) structure for nonvolatile memory applications.
    Wu CY; Liao TC; Liu YT; Yu MH; Cheng HC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5276-82. PubMed ID: 22966557
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider
    Nam K; Park C; Yoon JS; Yun H; Jang H; Cho K; Kang HJ; Park MS; Sim J; Choi HC; Baek RH
    Nanomaterials (Basel); 2022 May; 12(11):. PubMed ID: 35683664
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices.
    An HM; Kim HD; Kim B; Kim TG
    J Nanosci Nanotechnol; 2013 May; 13(5):3293-7. PubMed ID: 23858846
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory.
    Jeong JK; Sung JY; Ko WS; Nam KR; Lee HD; Lee GW
    Micromachines (Basel); 2021 Nov; 12(11):. PubMed ID: 34832812
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications.
    Sung JY; Jeong JK; Ko WS; Byun JH; Lee HD; Lee GW
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832728
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Retention Enhancement in Low Power NOR Flash Array with High-κ-Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide.
    Song YS; Park BG
    Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33808915
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.