These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

530 related articles for article (PubMed ID: 24780393)

  • 1. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.
    Choi YJ; Lim H; Lee S; Suh S; Kim JR; Jung HS; Park S; Lee JH; Kim SG; Hwang CS; Kim H
    ACS Appl Mater Interfaces; 2014 May; 6(10):7885-94. PubMed ID: 24780393
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Impurity and silicate formation dependence on O
    Park TJ; Byun YC; Wallace RM; Kim J
    J Chem Phys; 2017 Feb; 146(5):052821. PubMed ID: 28178843
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.
    Wang X; Liu HX; Fei CX; Yin SY; Fan XJ
    Nanoscale Res Lett; 2015; 10():141. PubMed ID: 25897303
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.
    Mukherjee C; Das T; Mahata C; Maiti CK; Chia CK; Chiam SY; Chi DZ; Dalapati GK
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3263-74. PubMed ID: 24472090
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.
    Kim SH; Joo SY; Jin HS; Kim WB; Park TJ
    ACS Appl Mater Interfaces; 2016 Aug; 8(32):20880-4. PubMed ID: 27467383
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Interface Electrical Properties of Al
    Fisichella G; Schilirò E; Di Franco S; Fiorenza P; Lo Nigro R; Roccaforte F; Ravesi S; Giannazzo F
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7761-7771. PubMed ID: 28135063
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Platinum-Enhanced Electron Transfer and Surface Passivation through Ultrathin Film Aluminum Oxide (Al₂O₃) on Si(111)-CH₃ Photoelectrodes.
    Kim HJ; Kearney KL; Le LH; Pekarek RT; Rose MJ
    ACS Appl Mater Interfaces; 2015 Apr; 7(16):8572-84. PubMed ID: 25880534
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Characterization of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition.
    Bencan A; Malic B; Drazic G; Vukadinović M; Kosec M
    Scanning; 2007; 29(6):287-93. PubMed ID: 18076056
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Electrical Properties and Interfacial Issues of HfO
    Zhao L; Liu H; Wang X; Wang Y; Wang S
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31060261
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Influence of Ultra-Thin Ge₃N₄ Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO₂/Ge Metal-Oxide-Semiconductor Devices.
    Mallem K; Jagadeesh Chandra SV; Ju M; Dutta S; Ramana CHVV; Hussain SQ; Park J; Kim Y; Cho YH; Cho EC; Yi J
    J Nanosci Nanotechnol; 2020 Feb; 20(2):1039-1045. PubMed ID: 31383103
    [TBL] [Abstract][Full Text] [Related]  

  • 12. The influence of process parameters and pulse ratio of precursors on the characteristics of La1 - x Al x O3 films deposited by atomic layer deposition.
    Fei C; Liu H; Wang X; Fan X
    Nanoscale Res Lett; 2015; 10():180. PubMed ID: 25983672
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Structural Properties of Al-O Monolayers in SiO
    Hiller D; Göttlicher J; Steininger R; Huthwelker T; Julin J; Munnik F; Wahl M; Bock W; Schoenaers B; Stesmans A; König D
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30495-30505. PubMed ID: 30110151
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.
    Park S; Kim SY; Choi Y; Kim M; Shin H; Kim J; Choi W
    ACS Appl Mater Interfaces; 2016 May; 8(18):11189-93. PubMed ID: 27117229
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.
    Xiang Y; Zhou C; Jia E; Wang W
    Nanoscale Res Lett; 2015; 10():137. PubMed ID: 25852428
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process.
    Vishwas M; Rao KN; Phani AR; Arjuna Gowda KV; Chakradhar RP
    Spectrochim Acta A Mol Biomol Spectrosc; 2011 Feb; 78(2):695-9. PubMed ID: 21208823
    [TBL] [Abstract][Full Text] [Related]  

  • 17. [Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].
    Sun XJ; Ma SY; Wei JJ; Xu XL
    Guang Pu Xue Yu Guang Pu Fen Xi; 2008 Sep; 28(9):2033-7. PubMed ID: 19093555
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Selective Growth of Interface Layers from Reactions of Sc(MeCp)
    Rahman R; Klesko JP; Dangerfield A; Mattson EC; Chabal YJ
    ACS Appl Mater Interfaces; 2018 Sep; 10(38):32818-32827. PubMed ID: 30211529
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Al2O3 and TiO2 atomic layer deposition on copper for water corrosion resistance.
    Abdulagatov AI; Yan Y; Cooper JR; Zhang Y; Gibbs ZM; Cavanagh AS; Yang RG; Lee YC; George SM
    ACS Appl Mater Interfaces; 2011 Dec; 3(12):4593-601. PubMed ID: 22032254
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optical and interfacial layer properties of SiO2 films deposited on different substrates.
    Jiang Y; Liu H; Wang L; Liu D; Jiang C; Cheng X; Yang Y; Ji Y
    Appl Opt; 2014 Feb; 53(4):A83-7. PubMed ID: 24514254
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 27.