These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

371 related articles for article (PubMed ID: 24784161)

  • 1. Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.
    Van NH; Lee JH; Sohn JI; Cha S; Whang D; Kim JM; Kang DJ
    Nanotechnology; 2014 May; 25(20):205201. PubMed ID: 24784161
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels.
    Van NH; Lee JH; Whang D; Kang DJ
    Nanomicro Lett; 2015; 7(1):35-41. PubMed ID: 30464954
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.
    Van NH; Lee JH; Whang D; Kang DJ
    Nanoscale; 2015 Jul; 7(27):11660-6. PubMed ID: 26098677
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching.
    Zhang Y; Xiong W; Chen W; Luo X; Zhang X; Zheng Y
    Phys Chem Chem Phys; 2020 Feb; 22(8):4685-4691. PubMed ID: 32057040
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation.
    Hwang SK; Park TJ; Kim KL; Cho SM; Jeong BJ; Park C
    ACS Appl Mater Interfaces; 2014 Nov; 6(22):20179-87. PubMed ID: 25341965
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.
    Hwang SK; Min SY; Bae I; Cho SM; Kim KL; Lee TW; Park C
    Small; 2014 May; 10(10):1976-84. PubMed ID: 24644019
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Chemically cross-linked thin poly(vinylidene fluoride-co-trifluoroethylene)films for nonvolatile ferroelectric polymer memory.
    Shin YJ; Kang SJ; Jung HJ; Park YJ; Bae I; Choi DH; Park C
    ACS Appl Mater Interfaces; 2011 Feb; 3(2):582-9. PubMed ID: 21302914
    [TBL] [Abstract][Full Text] [Related]  

  • 8. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
    Van NH; Lee JH; Sohn JI; Cha SN; Whang D; Kim JM; Kang DJ
    Nanoscale; 2014 May; 6(10):5479-83. PubMed ID: 24727896
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory.
    Sakai S; Takahashi M
    Materials (Basel); 2010 Nov; 3(11):4950-4964. PubMed ID: 28883363
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.
    Cao R; Huang G; Di Z; Zhu G; Mei Y
    Nanoscale Res Lett; 2014 Dec; 9(1):2412. PubMed ID: 26088987
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals.
    Kang SJ; Bae I; Shin YJ; Park YJ; Huh J; Park SM; Kim HC; Park C
    Nano Lett; 2011 Jan; 11(1):138-44. PubMed ID: 21114332
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube.
    Son JY; Ryu S; Park YC; Lim YT; Shin YS; Shin YH; Jang HM
    ACS Nano; 2010 Dec; 4(12):7315-20. PubMed ID: 21050014
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low Voltage Operating 2D MoS
    Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y
    Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer.
    Xiang L; Wang W; Xie W
    Sci Rep; 2016 Nov; 6():36291. PubMed ID: 27824101
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.
    Liao L; Fan HJ; Yan B; Zhang Z; Chen LL; Li BS; Xing GZ; Shen ZX; Wu T; Sun XW; Wang J; Yu T
    ACS Nano; 2009 Mar; 3(3):700-6. PubMed ID: 19249845
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Solution-processable low-voltage and flexible floating-gate memories based on an n-type polymer semiconductor and high-k polymer gate dielectrics.
    Li J; Yan F
    ACS Appl Mater Interfaces; 2014 Aug; 6(15):12815-20. PubMed ID: 25026221
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film.
    Xu T; Xiang L; Xu M; Xie W; Wang W
    Sci Rep; 2017 Aug; 7(1):8890. PubMed ID: 28827595
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Graphene-graphene oxide floating gate transistor memory.
    Jang S; Hwang E; Lee JH; Park HS; Cho JH
    Small; 2015 Jan; 11(3):311-8. PubMed ID: 25163911
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications.
    Singh P; Baek S; Yoo HH; Niu J; Park JH; Lee S
    ACS Nano; 2022 Apr; 16(4):5418-5426. PubMed ID: 35234041
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Self-polarized Poly(vinylidene fluoride) Ultrathin Film and Its Piezo/Ferroelectric Properties.
    Liu J; Zhao Q; Dong Y; Sun X; Hu Z; Dong H; Hu W; Yan S
    ACS Appl Mater Interfaces; 2020 Jul; 12(26):29818-29825. PubMed ID: 32498506
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 19.