These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

284 related articles for article (PubMed ID: 24848303)

  • 21. Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation.
    Singh N; Yan C; Lee PS; Comini E
    Nanoscale; 2011 Apr; 3(4):1760-5. PubMed ID: 21347489
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Mobility enhancement of SnO2 nanowire transistors gated with a nanogranular SiO2 solid electrolyte.
    Sun J; Huang W; Qian C; Yang J; Gao Y
    Phys Chem Chem Phys; 2014 Jan; 16(3):1084-8. PubMed ID: 24288005
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Size-dependent effects on electrical contacts to nanotubes and nanowires.
    LĂ©onard F; Talin AA
    Phys Rev Lett; 2006 Jul; 97(2):026804. PubMed ID: 16907474
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
    Liu H; Si M; Deng Y; Neal AT; Du Y; Najmaei S; Ajayan PM; Lou J; Ye PD
    ACS Nano; 2014 Jan; 8(1):1031-8. PubMed ID: 24351134
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.
    Noda K; Wada Y; Toyabe T
    Phys Chem Chem Phys; 2015 Oct; 17(40):26535-40. PubMed ID: 24922359
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.
    Ma RM; Peng RM; Wen XN; Dai L; Liu C; Sun T; Xu WJ; Qin GG
    J Nanosci Nanotechnol; 2010 Oct; 10(10):6428-31. PubMed ID: 21137742
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires.
    Xu T; Wang H; Chen X; Luo M; Zhang L; Wang Y; Chen F; Shan C; Yu C
    Nanotechnology; 2020 May; 31(29):294004. PubMed ID: 32235081
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Protein biosensor based on Schottky barrier nanowire field effect transistor.
    Smolyarova TE; Shanidze LV; Lukyanenko AV; Baron FA; Krasitskaya VV; Kichkailo AS; Tarasov AS; Volkov N
    Talanta; 2022 Mar; 239():123092. PubMed ID: 34856478
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Control of semiconducting and metallic indium oxide nanowires.
    Lim T; Lee S; Meyyappan M; Ju S
    ACS Nano; 2011 May; 5(5):3917-22. PubMed ID: 21504171
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions.
    Chen IJ; Lehmann S; Nilsson M; Kivisaari P; Linke H; Dick KA; Thelander C
    Nano Lett; 2017 Feb; 17(2):902-908. PubMed ID: 28002673
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire field effect transistors.
    Jang SH; Ryu JT; You JH; Kim TW
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5839-42. PubMed ID: 22966666
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Direct-write fabrication of a nanoscale digital logic element on a single nanowire.
    Roy S; Gao Z
    Nanotechnology; 2010 Jun; 21(24):245306. PubMed ID: 20498519
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors.
    Shen T; Penumatcha AV; Appenzeller J
    ACS Nano; 2016 Apr; 10(4):4712-8. PubMed ID: 27043387
    [TBL] [Abstract][Full Text] [Related]  

  • 34. A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.
    Kaufmann IR; Zerey O; Meyers T; Reker J; Vidor F; Hilleringmann U
    Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33946278
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Anomalous Schottky barriers and contact band-to-band tunneling in carbon nanotube transistors.
    Perello DJ; Chulim S; Chae SJ; Lee I; Kim MJ; Lee YH; Yun M
    ACS Nano; 2010 Jun; 4(6):3103-8. PubMed ID: 20509663
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Effect of nanowire number, diameter, and doping density on nano-FET biosensor sensitivity.
    Li J; Zhang Y; To S; You L; Sun Y
    ACS Nano; 2011 Aug; 5(8):6661-8. PubMed ID: 21815637
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.
    Zhao Y; Candebat D; Delker C; Zi Y; Janes D; Appenzeller J; Yang C
    Nano Lett; 2012 Oct; 12(10):5331-6. PubMed ID: 22950905
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Schottky barrier thin film transistors using solution-processed n-ZnO.
    Adl AH; Ma A; Gupta M; Benlamri M; Tsui YY; Barlage DW; Shankar K
    ACS Appl Mater Interfaces; 2012 Mar; 4(3):1423-8. PubMed ID: 22387678
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
    Tseng AC; Lynall D; Savelyev I; Blumin M; Wang S; Ruda HE
    Sensors (Basel); 2017 Jul; 17(7):. PubMed ID: 28714903
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.
    Zhang G; Tateno K; Sogawa T; Gotoh H
    Nanotechnology; 2018 Apr; 29(15):155202. PubMed ID: 29376842
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 15.