These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
10. High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. Endoh N; Akiyama S; Tashima K; Suwa K; Kamogawa T; Kohama R; Funakubo K; Konishi S; Mogi H; Kawahara M; Kawai M; Kubota Y; Ohkochi T; Kotsugi M; Horiba K; Kumigashira H; Suemitsu M; Watanabe I; Fukidome H Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33557014 [TBL] [Abstract][Full Text] [Related]
11. High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111). Mondelli P; Gupta B; Betti MG; Mariani C; Duffin JL; Motta N Nanotechnology; 2017 Mar; 28(11):115601. PubMed ID: 28099157 [TBL] [Abstract][Full Text] [Related]
12. Band engineering and magnetic doping of epitaxial graphene on SiC (0001). Jayasekera T; Kong BD; Kim KW; Buongiorno Nardelli M Phys Rev Lett; 2010 Apr; 104(14):146801. PubMed ID: 20481952 [TBL] [Abstract][Full Text] [Related]
14. Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers. Anzalone R; Zimbone M; Calabretta C; Mauceri M; Alberti A; Reitano R; La Via F Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31658766 [TBL] [Abstract][Full Text] [Related]
15. Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111). Perova TS; Wasyluk J; Kukushkin SA; Osipov AV; Feoktistov NA; Grudinkin SA Nanoscale Res Lett; 2010 Jun; 5(9):1507-1511. PubMed ID: 20730078 [TBL] [Abstract][Full Text] [Related]
16. Flat-Band Electronic Structure and Interlayer Spacing Influence in Rhombohedral Four-Layer Graphene. Wang W; Shi Y; Zakharov AA; Syväjärvi M; Yakimova R; Uhrberg RIG; Sun J Nano Lett; 2018 Sep; 18(9):5862-5866. PubMed ID: 30136852 [TBL] [Abstract][Full Text] [Related]
17. 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate. Zimbone M; Zielinski M; Bongiorno C; Calabretta C; Anzalone R; Scalese S; Fisicaro G; La Magna A; Mancarella F; La Via F Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31635213 [TBL] [Abstract][Full Text] [Related]
18. Epitaxial graphene on SiC{0001}: advances and perspectives. Norimatsu W; Kusunoki M Phys Chem Chem Phys; 2014 Feb; 16(8):3501-11. PubMed ID: 24434866 [TBL] [Abstract][Full Text] [Related]
19. Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene. Hass J; Varchon F; Millán-Otoya JE; Sprinkle M; Sharma N; de Heer WA; Berger C; First PN; Magaud L; Conrad EH Phys Rev Lett; 2008 Mar; 100(12):125504. PubMed ID: 18517883 [TBL] [Abstract][Full Text] [Related]
20. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. Jia Y; Sun X; Shi Z; Jiang K; Liu H; Ben J; Li D Small; 2018 Jun; 14(26):e1801273. PubMed ID: 29808580 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]