These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

674 related articles for article (PubMed ID: 24921274)

  • 21. Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.
    Xu B; Wang G; Du Y; Miao Y; Li B; Zhao X; Lin H; Yu J; Su J; Dong Y; Ye T; Radamson HH
    Nanomaterials (Basel); 2022 Aug; 12(15):. PubMed ID: 35957135
    [TBL] [Abstract][Full Text] [Related]  

  • 22. InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods.
    Zhukov AE; Kryzhanovskaya NV; Moiseev EI; Dragunova AS; Tang M; Chen S; Liu H; Kulagina MM; Kadinskaya SA; Zubov FI; Mozharov AM; Maximov MV
    Materials (Basel); 2020 May; 13(10):. PubMed ID: 32443456
    [TBL] [Abstract][Full Text] [Related]  

  • 23. InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration.
    Wei WQ; Feng Q; Guo JJ; Guo MC; Wang JH; Wang ZH; Wang T; Zhang JJ
    Opt Express; 2020 Aug; 28(18):26555-26563. PubMed ID: 32906927
    [TBL] [Abstract][Full Text] [Related]  

  • 24. E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.
    Liang W; Wei W; Han D; Ming M; Zhang J; Wang Z; Zhang X; Wang T; Zhang J
    Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673273
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates.
    Wan Y; Zhang Z; Chao R; Norman J; Jung D; Shang C; Li Q; Kennedy MJ; Liang D; Zhang C; Shi JW; Gossard AC; Lau KM; Bowers JE
    Opt Express; 2017 Oct; 25(22):27715-27723. PubMed ID: 29092242
    [TBL] [Abstract][Full Text] [Related]  

  • 26. 1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy.
    Zhang B; Wei WQ; Wang JH; Zhang JY; Cong H; Feng Q; Wang T; Zhang JJ
    Opt Express; 2019 Jul; 27(14):19348-19358. PubMed ID: 31503695
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 28. InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate.
    Liang H; Jin T; Chi C; Sun J; Zhang X; You T; Zhou M; Lin J; Wang S
    Opt Express; 2021 Nov; 29(23):38465-38476. PubMed ID: 34808899
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3  μm.
    Kryzhanovskaya N; Moiseev E; Polubavkina Y; Maximov M; Kulagina M; Troshkov S; Zadiranov Y; Guseva Y; Lipovskii A; Tang M; Liao M; Wu J; Chen S; Liu H; Zhukov A
    Opt Lett; 2017 Sep; 42(17):3319-3322. PubMed ID: 28957093
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer.
    He J; Wu Y; Wang KL
    Nanotechnology; 2010 Jun; 21(25):255705. PubMed ID: 20516585
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
    Su XB; Ding Y; Ma B; Zhang KL; Chen ZS; Li JL; Cui XR; Xu YQ; Ni HQ; Niu ZC
    Nanoscale Res Lett; 2018 Feb; 13(1):59. PubMed ID: 29468483
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).
    Kumar A; Lee SY; Yadav S; Tan KH; Loke WK; Dong Y; Lee KH; Wicaksono S; Liang G; Yoon SF; Antoniadis D; Yeo YC; Gong X
    Opt Express; 2017 Dec; 25(25):31853-31862. PubMed ID: 29245855
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C.
    Lv Z; Wang S; Wang S; Chai H; Meng L; Yang X; Yang T
    Opt Express; 2023 Jul; 31(15):24173-24182. PubMed ID: 37475250
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si.
    Kim H; Geum DM; Ko YH; Han WS
    Nanoscale Res Lett; 2022 Dec; 17(1):126. PubMed ID: 36534366
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices.
    Golovynskyi S; Seravalli L; Datsenko O; Kozak O; Kondratenko SV; Trevisi G; Frigeri P; Gombia E; Lavoryk SR; Golovynska I; Ohulchanskyy TY; Qu J
    Nanoscale Res Lett; 2017 Oct; 12(1):559. PubMed ID: 28983869
    [TBL] [Abstract][Full Text] [Related]  

  • 36. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
    Seravalli L; Trevisi G; Frigeri P; Franchi S; Geddo M; Guizzetti G
    Nanotechnology; 2009 Jul; 20(27):275703. PubMed ID: 19531853
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Phosphorus-free 1.5  µm InAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform.
    Wei WQ; Zhang JY; Wang JH; Cong H; Guo JJ; Wang ZH; Xu HX; Wang T; Zhang JJ
    Opt Lett; 2020 Apr; 45(7):2042-2045. PubMed ID: 32236063
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy.
    Huwayz MA; Jameel DA; de Azevedo WM; Felix JF; Saqri NA; Lemine OM; Alrub SA; Henini M
    Phys Chem Chem Phys; 2023 Dec; 26(1):445-454. PubMed ID: 38078519
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures.
    Golovynskyi S; Seravalli L; Datsenko O; Trevisi G; Frigeri P; Gombia E; Golovynska I; Kondratenko SV; Qu J; Ohulchanskyy TY
    Nanoscale Res Lett; 2017 Dec; 12(1):335. PubMed ID: 28482647
    [TBL] [Abstract][Full Text] [Related]  

  • 40. InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K.
    Kang SS; Geum DM; Kwak K; Kang JH; Shim CH; Hyun H; Kim SH; Choi WJ; Choi SH; Park MC; Song JD
    Sci Rep; 2019 Sep; 9(1):12875. PubMed ID: 31492924
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 34.