These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

231 related articles for article (PubMed ID: 24922386)

  • 1. Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.
    Shi C; Zhang C; Yang F; Park MJ; Kwak JS; Jung S; Choi YH; Wang X; Xiao M
    Opt Express; 2014 May; 22 Suppl 3():A790-9. PubMed ID: 24922386
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.
    Yoo YS; Na JH; Son SJ; Cho YH
    Sci Rep; 2016 Oct; 6():34586. PubMed ID: 27756916
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.
    Zhang YP; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Wang LC; Kyaw Z; Hasanov N; Zhu BB; Lu SP; Sun XW; Demir HV
    Opt Express; 2015 Feb; 23(3):A34-42. PubMed ID: 25836251
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.
    Wang L; Lu C; Lu J; Liu L; Liu N; Chen Y; Zhang Y; Gu E; Hu X
    Opt Express; 2011 Jul; 19(15):14182-7. PubMed ID: 21934781
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.
    Wei T; Ji X; Wu K; Zheng H; Du C; Chen Y; Yan Q; Zhao L; Zhou Z; Wang J; Li J
    Opt Lett; 2014 Jan; 39(2):379-82. PubMed ID: 24562151
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Efficiency droop in zincblende InGaN/GaN quantum wells.
    Dyer D; Church SA; Ahumada-Lazo R; Kappers MJ; Halsall MP; Parkinson P; Wallis DJ; Oliver RA; Binks DJ
    Nanoscale; 2024 Jul; 16(29):13953-13961. PubMed ID: 38980687
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.
    Zhao H; Liu G; Zhang J; Poplawsky JD; Dierolf V; Tansu N
    Opt Express; 2011 Jul; 19 Suppl 4():A991-A1007. PubMed ID: 21747571
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on
    Kapoor A; Finot S; Grenier V; Robin E; Bougerol C; Bleuse J; Jacopin G; Eymery J; Durand C
    ACS Appl Mater Interfaces; 2020 Apr; 12(16):19092-19101. PubMed ID: 32208628
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of current spreading on the efficiency droop of InGaN light-emitting diodes.
    Ryu HY; Shim JI
    Opt Express; 2011 Feb; 19(4):2886-94. PubMed ID: 21369110
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
    Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
    Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
    Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J
    Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements.
    Rashidi A; Monavarian M; Aragon A; Feezell D
    Sci Rep; 2019 Dec; 9(1):19921. PubMed ID: 31882667
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients.
    Monavarian M; Rashidi A; Aragon A; Oh SH; Nami M; DenBaars SP; Feezell D
    Opt Express; 2017 Aug; 25(16):19343-19353. PubMed ID: 29041128
    [TBL] [Abstract][Full Text] [Related]  

  • 15. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.
    Sheu JK; Chen FB; Yen WY; Wang YC; Liu CN; Yeh YH; Lee ML
    Opt Express; 2015 Apr; 23(7):A371-81. PubMed ID: 25968802
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs.
    Aggarwal T; Udai A; Saha PK; Ganguly S; Bhattacharya P; Saha D
    ACS Appl Mater Interfaces; 2022 Mar; 14(11):13812-13819. PubMed ID: 35262330
    [TBL] [Abstract][Full Text] [Related]  

  • 17. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
    Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.
    Zhou S; Liu X; Yan H; Gao Y; Xu H; Zhao J; Quan Z; Gui C; Liu S
    Sci Rep; 2018 Jul; 8(1):11053. PubMed ID: 30038360
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition.
    Liao CH; Tu CG; Chang WM; Su CY; Shih PY; Chen HT; Yao YF; Hsieh C; Chen HS; Lin CH; Yu CK; Kiang YW; Yang CC
    Opt Express; 2014 Jul; 22(14):17303-19. PubMed ID: 25090544
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration.
    Chang JY; Chen FM; Kuo YK; Shih YH; Sheu JK; Lai WC; Liu H
    Opt Lett; 2013 Aug; 38(16):3158-61. PubMed ID: 24104675
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.