These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
280 related articles for article (PubMed ID: 25008561)
1. Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition. Kim JH; Elmaghraoui D; Leroux M; Korytov M; Vennéguès P; Jaziri S; Brault J; Cho YH Nanotechnology; 2014 Aug; 25(30):305703. PubMed ID: 25008561 [TBL] [Abstract][Full Text] [Related]
2. Optical properties and carrier dynamics of self-assembled GaN/Al(0.11)Ga(0.89)N quantum dots. Ke WC; Fu CP; Huang CC; Ku CS; Lee L; Chen CY; Tsai WC; Chen WK; Lee MC; Chou WC; Lin WJ; Cheng YC Nanotechnology; 2006 May; 17(10):2609-13. PubMed ID: 21727512 [TBL] [Abstract][Full Text] [Related]
3. [Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling]. Jia GZ; Yao JH; Zhang CL; Shu Q; Liu RB; Ye XL; Wang ZG Guang Pu Xue Yu Guang Pu Fen Xi; 2007 Nov; 27(11):2178-81. PubMed ID: 18260388 [TBL] [Abstract][Full Text] [Related]
4. UV Emission from GaN Wires with Grenier V; Finot S; Jacopin G; Bougerol C; Robin E; Mollard N; Gayral B; Monroy E; Eymery J; Durand C ACS Appl Mater Interfaces; 2020 Sep; 12(39):44007-44016. PubMed ID: 32894670 [TBL] [Abstract][Full Text] [Related]
5. Optical properties of GaN-based nanowires containing a single Al(0.14)Ga(0.86)N/GaN quantum disc. Jacopin G; Rigutti L; Teubert J; Julien FH; Furtmayr F; Komninou P; Kehagias T; Eickhoff M; Tchernycheva M Nanotechnology; 2013 Mar; 24(12):125201. PubMed ID: 23459100 [TBL] [Abstract][Full Text] [Related]
6. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823 [TBL] [Abstract][Full Text] [Related]
7. Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods. Park YS; Holmes MJ; Kang TW; Taylor RA Nanotechnology; 2010 Mar; 21(11):115401. PubMed ID: 20173227 [TBL] [Abstract][Full Text] [Related]
8. Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness. Wang X; Liang F; Zhao D; Liu Z; Zhu J; Yang J Nanoscale Res Lett; 2020 Oct; 15(1):191. PubMed ID: 33001341 [TBL] [Abstract][Full Text] [Related]
9. Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy. Sinito C; Corfdir P; Pfüller C; Gao G; Bartolomé J; Kölling S; Rodil Doblado A; Jahn U; Lähnemann J; Auzelle T; Zettler JK; Flissikowski T; Koenraad P; Grahn HT; Geelhaar L; Fernández-Garrido S; Brandt O Nano Lett; 2019 Sep; 19(9):5938-5948. PubMed ID: 31385709 [TBL] [Abstract][Full Text] [Related]
10. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes. Dong P; Yan J; Zhang Y; Wang J; Geng C; Zheng H; Wei X; Yan Q; Li J Opt Express; 2014 Mar; 22 Suppl 2():A320-7. PubMed ID: 24922241 [TBL] [Abstract][Full Text] [Related]
11. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes. Dong P; Yan J; Zhang Y; Wang J; Geng C; Zheng H; Wei X; Yan Q; Li J Opt Express; 2014 Mar; 22(5):A320-7. PubMed ID: 24800288 [TBL] [Abstract][Full Text] [Related]
12. Local structure of uncapped and capped InGaN/GaN quantum dots. Piskorska-Hommel E; Schmidt T; Siebert M; Yamaguchi T; Hommel D; Falta J; Cross JO J Synchrotron Radiat; 2009 Jul; 16(Pt 4):494-7. PubMed ID: 19535863 [TBL] [Abstract][Full Text] [Related]
13. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy. Mano T; Abbarchi M; Kuroda T; Mastrandrea CA; Vinattieri A; Sanguinetti S; Sakoda K; Gurioli M Nanotechnology; 2009 Sep; 20(39):395601. PubMed ID: 19724114 [TBL] [Abstract][Full Text] [Related]
14. Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect. Fang ZL; Lin DQ; Kang JY; Kong JF; Shen WZ Nanotechnology; 2009 Jun; 20(23):235401. PubMed ID: 19448299 [TBL] [Abstract][Full Text] [Related]
16. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands. Hazdra P; Oswald J; Komarnitskyy V; Kuldová K; Hospodková A; Hulicius E; Pangrác J J Nanosci Nanotechnol; 2011 Aug; 11(8):6804-9. PubMed ID: 22103083 [TBL] [Abstract][Full Text] [Related]
17. Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core-Shell Structure. Deng J; Hao Z; Wang L; Yu J; Wang J; Sun C; Han Y; Xiong B; Li H; Zhao W; Liang X; Wang J; Luo Y Nanomaterials (Basel); 2020 Nov; 10(11):. PubMed ID: 33233685 [TBL] [Abstract][Full Text] [Related]
18. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique. Song H; Kim JS; Kim EK; Seo YG; Hwang SM Nanotechnology; 2010 Apr; 21(13):134026. PubMed ID: 20208099 [TBL] [Abstract][Full Text] [Related]