These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

95 related articles for article (PubMed ID: 25072273)

  • 21. Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.
    Ng RQ; Tok ES; Kang HC
    J Chem Phys; 2009 Jul; 131(4):044707. PubMed ID: 19655909
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films.
    Pandey SC; Singh T; Maroudas D
    J Chem Phys; 2009 Jul; 131(3):034503. PubMed ID: 19624205
    [TBL] [Abstract][Full Text] [Related]  

  • 23. The dissociative adsorption of silane and disilane on Si(100)-(2 x 1).
    Shi J; Tok ES; Kang HC
    J Chem Phys; 2007 Oct; 127(16):164713. PubMed ID: 17979377
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas.
    Cheng Q; Xu S; Ostrikov KK
    Nanotechnology; 2009 May; 20(21):215606. PubMed ID: 19423937
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Thermal stability of precursors for atomic layer deposition of TiO2, ZrO2, and HfO2: an ab initio study of alpha-hydrogen abstraction in bis-cyclopentadienyl dimethyl complexes.
    Zydor A; Elliott SD
    J Phys Chem A; 2010 Feb; 114(4):1879-86. PubMed ID: 20055493
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Thermal expansion coefficient and thermomechanical properties of SiN(x) thin films prepared by plasma-enhanced chemical vapor deposition.
    Tien CL; Lin TW
    Appl Opt; 2012 Oct; 51(30):7229-35. PubMed ID: 23089776
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films.
    Bakos T; Valipa MS; Maroudas D
    J Chem Phys; 2005 Feb; 122(5):54703. PubMed ID: 15740342
    [TBL] [Abstract][Full Text] [Related]  

  • 28. First principles simulation of reaction steps in the atomic layer deposition of titania: dependence of growth on Lewis acidity of titanocene precursor.
    Zydor A; Kessler VG; Elliott SD
    Phys Chem Chem Phys; 2012 Jun; 14(22):7954-64. PubMed ID: 22549386
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors.
    Holme TP; Prinz FB
    J Phys Chem A; 2007 Aug; 111(33):8147-51. PubMed ID: 17655282
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Surface smoothening mechanism of amorphous silicon thin films.
    Valipa MS; Bakos T; Aydil ES; Maroudas D
    Phys Rev Lett; 2005 Nov; 95(21):216102. PubMed ID: 16384161
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Atomic layer deposited molybdenum nitride thin film: a promising anode material for Li ion batteries.
    Nandi DK; Sen UK; Choudhury D; Mitra S; Sarkar SK
    ACS Appl Mater Interfaces; 2014 May; 6(9):6606-15. PubMed ID: 24641277
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.
    Milanov AP; Xu K; Laha A; Bugiel E; Ranjith R; Schwendt D; Osten HJ; Parala H; Fischer RA; Devi A
    J Am Chem Soc; 2010 Jan; 132(1):36-7. PubMed ID: 20000721
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Catalyzed Atomic Layer Deposition of Silicon Oxide at Ultralow Temperature Using Alkylamine.
    Mayangsari TR; Park JM; Yusup LL; Gu J; Yoo JH; Kim HD; Lee WJ
    Langmuir; 2018 Jun; 34(23):6660-6669. PubMed ID: 29768003
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Methane dissociative chemisorption and detailed balance on Pt(111): dynamical constraints and the modest influence of tunneling.
    Donald SB; Navin JK; Harrison I
    J Chem Phys; 2013 Dec; 139(21):214707. PubMed ID: 24320394
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Quantum chemical study of the initial surface reactions in atomic layer deposition of TiN on the SiO(2) surface.
    Lu HL; Chen W; Ding SJ; Xu M; Zhang DW; Wang LK
    J Phys Condens Matter; 2006 Jul; 18(26):5937-44. PubMed ID: 21690809
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Surface chemistry for molecular layer deposition of organic and hybrid organic-inorganic polymers.
    George SM; Yoon B; Dameron AA
    Acc Chem Res; 2009 Apr; 42(4):498-508. PubMed ID: 19249861
    [TBL] [Abstract][Full Text] [Related]  

  • 37. On the mechanism of silicon activation by halogen atoms.
    Soria FA; Patrito EM; Paredes-Olivera P
    Langmuir; 2011 Mar; 27(6):2613-24. PubMed ID: 21338085
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Quantum confinement in amorphous TiO(2) films studied via atomic layer deposition.
    King DM; Du X; Cavanagh AS; Weimer AW
    Nanotechnology; 2008 Nov; 19(44):445401. PubMed ID: 21832729
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering.
    Lambrinos MF; Valizadeh R; Colligon JS
    Appl Opt; 1996 Jul; 35(19):3620-6. PubMed ID: 21102756
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Neural network modeling of deposition rate characteristics of low temperature silicon nitride deposited by inner two parallel coil inductively coupled plasma chemical vapor deposition.
    Kang S; Jeong SK; Kwon KH; Park KB
    J Nanosci Nanotechnol; 2013 Dec; 13(12):8101-5. PubMed ID: 24266199
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 5.