These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
167 related articles for article (PubMed ID: 25078328)
1. Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors. Yoon S; Tak YJ; Yoon DH; Choi UH; Park JS; Ahn BD; Kim HJ ACS Appl Mater Interfaces; 2014 Aug; 6(16):13496-501. PubMed ID: 25078328 [TBL] [Abstract][Full Text] [Related]
2. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C. Kim WG; Tak YJ; Du Ahn B; Jung TS; Chung KB; Kim HJ Sci Rep; 2016 Mar; 6():23039. PubMed ID: 26972476 [