297 related articles for article (PubMed ID: 25090286)
1. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.
Kim YJ; Oh S; Yang BS; Han SJ; Lee HW; Kim HJ; Jeong JK; Hwang CS; Kim HJ
ACS Appl Mater Interfaces; 2014 Aug; 6(16):14026-36. PubMed ID: 25090286
[TBL] [Abstract][Full Text] [Related]
2. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
Kim YJ; Yang BS; Oh S; Han SJ; Lee HW; Heo J; Jeong JK; Kim HJ
ACS Appl Mater Interfaces; 2013 Apr; 5(8):3255-61. PubMed ID: 23540523
[TBL] [Abstract][Full Text] [Related]
3. Dual electrical behavior of multivalent metal cation-based oxide and its application to thin-film transistors with high mobility and excellent photobias stability.
Yun MG; Ahn CH; Cho SW; Kim SH; Kim YK; Cho HK
ACS Appl Mater Interfaces; 2015 Mar; 7(11):6118-24. PubMed ID: 25714371
[TBL] [Abstract][Full Text] [Related]
4. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.
Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B
J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716
[TBL] [Abstract][Full Text] [Related]
5. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.
Ahn BD; Jeon HJ; Park JS
ACS Appl Mater Interfaces; 2014 Jun; 6(12):9228-35. PubMed ID: 24892383
[TBL] [Abstract][Full Text] [Related]
6. Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics.
Chandra RD; Rao M; Zhang K; Prabhakar RR; Shi C; Zhang J; Mhaisalkar SG; Mathews N
ACS Appl Mater Interfaces; 2014 Jan; 6(2):773-7. PubMed ID: 24380364
[TBL] [Abstract][Full Text] [Related]
7. Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor.
Shin JH; Kim SJ; Ha SS; Im YJ; Park CH; Yi M
J Nanosci Nanotechnol; 2015 Oct; 15(10):7743-7. PubMed ID: 26726405
[TBL] [Abstract][Full Text] [Related]
8. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors.
Huang G; Duan L; Zhao Y; Zhang Y; Dong G; Zhang D; Qiu Y
Nanotechnology; 2016 Nov; 27(46):465204. PubMed ID: 27758975
[TBL] [Abstract][Full Text] [Related]
9. High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.
Kim MG; Kim HS; Ha YG; He J; Kanatzidis MG; Facchetti A; Marks TJ
J Am Chem Soc; 2010 Aug; 132(30):10352-64. PubMed ID: 20662515
[TBL] [Abstract][Full Text] [Related]
10. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.
Sanctis S; Koslowski N; Hoffmann R; Guhl C; Erdem E; Weber S; Schneider JJ
ACS Appl Mater Interfaces; 2017 Jun; 9(25):21328-21337. PubMed ID: 28573850
[TBL] [Abstract][Full Text] [Related]
11. Graded-Band-Gap Zinc-Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection.
Teng J; Chen Y; Huang C; Yang M; Zhu B; Liu WJ; Ding SJ; Wu X
ACS Appl Mater Interfaces; 2024 Feb; 16(7):9060-9067. PubMed ID: 38336611
[TBL] [Abstract][Full Text] [Related]
12. Improvement of solution-processed Zn-Sn-O active-layer thin film transistors by novel high valence Mo doping.
Peng C; Dong P; Li X
Nanotechnology; 2021 Jan; 32(2):025207. PubMed ID: 32987367
[TBL] [Abstract][Full Text] [Related]
13. Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability.
Lee YG; Choi WS
ACS Appl Mater Interfaces; 2014 Jul; 6(14):11167-72. PubMed ID: 25000343
[TBL] [Abstract][Full Text] [Related]
14. Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics.
John RA; Nguyen AC; Chen Y; Shukla S; Chen S; Mathews N
ACS Appl Mater Interfaces; 2016 Jan; 8(2):1139-46. PubMed ID: 26695104
[TBL] [Abstract][Full Text] [Related]
15. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.
Wang C; Guo L; Lei M; Wang C; Chu X; Yang F; Gao X; Wamg H; Chi Y; Yang X
Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889620
[TBL] [Abstract][Full Text] [Related]
16. High-performance transistors based on zinc tin oxides by single spin-coating process.
Zhao Y; Duan L; Dong G; Zhang D; Qiao J; Wang L; Qiu Y
Langmuir; 2013 Jan; 29(1):151-7. PubMed ID: 23210920
[TBL] [Abstract][Full Text] [Related]
17. High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties.
Park J; Oh KT; Kim DH; Jeong HJ; Park YC; Kim HS; Park JS
ACS Appl Mater Interfaces; 2017 Jun; 9(24):20656-20663. PubMed ID: 28553708
[TBL] [Abstract][Full Text] [Related]
18. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.
Huang G; Duan L; Dong G; Zhang D; Qiu Y
ACS Appl Mater Interfaces; 2014 Dec; 6(23):20786-94. PubMed ID: 25375760
[TBL] [Abstract][Full Text] [Related]
19. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
Kim H; Kwack YJ; Yun EJ; Choi WS
Sci Rep; 2016 Sep; 6():33576. PubMed ID: 27641430
[TBL] [Abstract][Full Text] [Related]
20. Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process.
Jeon IY; Lee JY; Yoon DH
J Nanosci Nanotechnol; 2013 Mar; 13(3):1741-5. PubMed ID: 23755583
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
