These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

129 related articles for article (PubMed ID: 25147487)

  • 1. Unipolar resistive switching of ZnO-single-wire memristors.
    Huang Y; Luo Y; Shen Z; Yuan G; Zeng H
    Nanoscale Res Lett; 2014; 9(1):381. PubMed ID: 25147487
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
    Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
    Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Investigation of Different Oxygen Partial Pressures on MgGa
    Kao YN; Huang WL; Chang SP; Lai WC; Chang SJ
    ACS Omega; 2023 Jan; 8(4):3705-3712. PubMed ID: 36743031
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhanced Unipolar Resistive Switching Characteristics of Hf
    Wu Z; Zhu J
    Materials (Basel); 2017 Mar; 10(3):. PubMed ID: 28772685
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Bipolar Resistive Switching Characteristics of HfO
    Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D
    Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Functional bipolar resistive switching in AlN/Ni-Mn-In based magnetoelectric heterostructure.
    Kumar P; Kaur D
    Nanotechnology; 2021 Aug; 32(44):. PubMed ID: 34311446
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering.
    Guerra LM; Dias C; Pereira J; Lv H; Cardoso S; Freitas PP; Ventura J
    J Nanosci Nanotechnol; 2017 Jan; 17(1):564-67. PubMed ID: 29630146
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of Joule Heating on Resistive Switching Characteristic in AlO
    Zhang X; Xu L; Zhang H; Liu J; Tan D; Chen L; Ma Z; Li W
    Nanoscale Res Lett; 2020 Jan; 15(1):11. PubMed ID: 31940099
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.
    Kim S; Park BG
    Nanoscale Res Lett; 2016 Dec; 11(1):360. PubMed ID: 27518231
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Compliance current controlled volatile and nonvolatile memory in Ag/CoFe
    Munjal S; Khare N
    Nanotechnology; 2021 Apr; 32(18):185204. PubMed ID: 33470980
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
    Chen KH; Kao MC; Huang SJ; Li JZ
    Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29231867
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Random telegraph noise and resistance switching analysis of oxide based resistive memory.
    Choi S; Yang Y; Lu W
    Nanoscale; 2014 Jan; 6(1):400-4. PubMed ID: 24202235
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X; Li Y; Ai C; Wen D
    Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.
    Park MR; Abbas Y; Hu Q; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2015 Nov; 15(11):8613-6. PubMed ID: 26726561
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO
    Xu YD; Jiang YP; Tang XG; Liu QX; Tang Z; Li WH; Guo XB; Zhou YC
    Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36615949
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO
    Lee JK; Pyo J; Kim S
    Materials (Basel); 2023 Mar; 16(6):. PubMed ID: 36984197
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Quantum conductors formation and resistive switching memory effects in zirconia nanotubes.
    Vokhmintsev A; Petrenyov I; Kamalov R; Weinstein I
    Nanotechnology; 2021 Nov; 33(7):. PubMed ID: 34624881
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Excellent Bipolar Resistive Switching Characteristics of Bi
    Zhou HC; Jiang YP; Tang XG; Liu QX; Li WH; Tang ZH
    Nanomaterials (Basel); 2021 Oct; 11(10):. PubMed ID: 34685146
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
    Lee KJ; Wang LW; Chiang TK; Wang YH
    Materials (Basel); 2015 Oct; 8(10):7191-7198. PubMed ID: 28793630
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A layered (n-C
    Kim SY; Yang JM; Lee SH; Park NG
    Nanoscale; 2021 Aug; 13(29):12475-12483. PubMed ID: 34477612
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.