These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

213 related articles for article (PubMed ID: 25167845)

  • 1. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.
    Feng W; Zheng W; Cao W; Hu P
    Adv Mater; 2014 Oct; 26(38):6587-93. PubMed ID: 25167845
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration.
    Li Z; Liu J; Ou H; Hu Y; Zhu J; Huang J; Liu H; Tu Y; Qi D; Hao Q; Zhang W
    Nanomaterials (Basel); 2024 Feb; 14(4):. PubMed ID: 38392755
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.
    Li M; Lin CY; Yang SH; Chang YM; Chang JK; Yang FS; Zhong C; Jian WB; Lien CH; Ho CH; Liu HJ; Huang R; Li W; Lin YF; Chu J
    Adv Mater; 2018 Nov; 30(44):e1803690. PubMed ID: 30589465
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-Performance ZnPc Thin Film-Based Photosensitive Organic Field-Effect Transistors: Influence of Multilayer Dielectric Systems and Thin Film Growth Structure.
    Dey A; Singh A; Das D; Iyer PK
    ACS Omega; 2017 Mar; 2(3):1241-1248. PubMed ID: 31457500
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Remote Phonon Scattering in Two-Dimensional InSe FETs with High-
    Chang P; Liu X; Liu F; Du G
    Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30572574
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors.
    Feng W; Zheng W; Chen X; Liu G; Hu P
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26691-5. PubMed ID: 26575205
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-Mobility InSe Transistors: The Role of Surface Oxides.
    Ho PH; Chang YR; Chu YC; Li MK; Tsai CA; Wang WH; Ho CH; Chen CW; Chiu PW
    ACS Nano; 2017 Jul; 11(7):7362-7370. PubMed ID: 28661128
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.
    Sucharitakul S; Goble NJ; Kumar UR; Sankar R; Bogorad ZA; Chou FC; Chen YT; Gao XP
    Nano Lett; 2015 Jun; 15(6):3815-9. PubMed ID: 25924062
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics.
    Ji H; Joo MK; Yun Y; Park JH; Lee G; Moon BH; Yi H; Suh D; Lim SC
    ACS Appl Mater Interfaces; 2016 Jul; 8(29):19092-9. PubMed ID: 27362461
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors.
    Lee YT; Huang YT; Chiu SP; Wang RT; Taniguchi T; Watanabe K; Sankar R; Liang CT; Wang WH; Yeh SS; Lin JJ
    ACS Appl Mater Interfaces; 2024 Jan; 16(1):1066-1073. PubMed ID: 38113538
    [TBL] [Abstract][Full Text] [Related]  

  • 11. High-Mobility InSe Transistors: The Nature of Charge Transport.
    Tsai TH; Yang FS; Ho PH; Liang ZY; Lien CH; Ho CH; Lin YF; Chiu PW
    ACS Appl Mater Interfaces; 2019 Oct; 11(39):35969-35976. PubMed ID: 31532619
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A comparative study on top-gated and bottom-gated multilayer MoS
    Zou X; Xu J; Huang H; Zhu Z; Wang H; Li B; Liao L; Fang G
    Nanotechnology; 2018 Jun; 29(24):245201. PubMed ID: 29582776
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity.
    Liu L; Wu L; Wang A; Liu H; Ma R; Wu K; Chen J; Zhou Z; Tian Y; Yang H; Shen C; Bao L; Qin Z; Pantelides ST; Gao HJ
    Nano Lett; 2020 Sep; 20(9):6666-6673. PubMed ID: 32822183
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation.
    Wells SA; Henning A; Gish JT; Sangwan VK; Lauhon LJ; Hersam MC
    Nano Lett; 2018 Dec; 18(12):7876-7882. PubMed ID: 30418785
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Ballistic two-dimensional InSe transistors.
    Jiang J; Xu L; Qiu C; Peng LM
    Nature; 2023 Apr; 616(7957):470-475. PubMed ID: 36949203
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Performance improvement of multilayer InSe transistors with optimized metal contacts.
    Feng W; Zhou X; Tian WQ; Zheng W; Hu P
    Phys Chem Chem Phys; 2015 Feb; 17(5):3653-8. PubMed ID: 25554466
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.
    Movva HC; Rai A; Kang S; Kim K; Fallahazad B; Taniguchi T; Watanabe K; Tutuc E; Banerjee SK
    ACS Nano; 2015 Oct; 9(10):10402-10. PubMed ID: 26343531
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optimizing Al-doped ZrO
    Song X; Xu J; Liu L; Deng Y; Lai PT; Tang WM
    Nanotechnology; 2020 Mar; 31(13):135206. PubMed ID: 31766028
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C; Qaisi R; Liu Z; Yu Q; Hussain MM
    ACS Nano; 2013 Jul; 7(7):5818-23. PubMed ID: 23777434
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
    ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.