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2. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability. Kang YS; Kang HK; Kim DK; Jeong KS; Baik M; An Y; Kim H; Song JD; Cho MH ACS Appl Mater Interfaces; 2016 Mar; 8(11):7489-98. PubMed ID: 26928131 [TBL] [Abstract][Full Text] [Related]
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