These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

220 related articles for article (PubMed ID: 25268110)

  • 1. Simultaneous quantification of indium and nitrogen concentration in InGaNAs using HAADF-STEM.
    Grieb T; Müller K; Cadel E; Beyer A; Schowalter M; Talbot E; Volz K; Rosenauer A
    Microsc Microanal; 2014 Dec; 20(6):1740-52. PubMed ID: 25268110
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis.
    Grieb T; Müller K; Fritz R; Schowalter M; Neugebohrn N; Knaub N; Volz K; Rosenauer A
    Ultramicroscopy; 2012 Jun; 117():15-23. PubMed ID: 22634136
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images.
    Mehrtens T; Müller K; Schowalter M; Hu D; Schaadt DM; Rosenauer A
    Ultramicroscopy; 2013 Aug; 131():1-9. PubMed ID: 23666109
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy.
    Van Aert S; Verbeeck J; Erni R; Bals S; Luysberg M; Van Dyck D; Van Tendeloo G
    Ultramicroscopy; 2009 Sep; 109(10):1236-44. PubMed ID: 19525069
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy.
    Pantzas K; Patriarche G; Troadec D; Gautier S; Moudakir T; Suresh S; Largeau L; Mauguin O; Voss PL; Ougazzaden A
    Nanotechnology; 2012 Nov; 23(45):455707. PubMed ID: 23089619
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy.
    Martinez GT; Rosenauer A; De Backer A; Verbeeck J; Van Aert S
    Ultramicroscopy; 2014 Feb; 137():12-9. PubMed ID: 24270003
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Composition mapping in InGaN by scanning transmission electron microscopy.
    Rosenauer A; Mehrtens T; Müller K; Gries K; Schowalter M; Satyam PV; Bley S; Tessarek C; Hommel D; Sebald K; Seyfried M; Gutowski J; Avramescu A; Engl K; Lutgen S
    Ultramicroscopy; 2011 Jul; 111(8):1316-27. PubMed ID: 21864772
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Quantitative strain mapping applied to aberration--corrected HAADF images.
    Sanchez AM; Galindo PL; Kret S; Falke M; Beanland R; Goodhew PJ
    Microsc Microanal; 2006 Aug; 12(4):285-94. PubMed ID: 16842640
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Composition determination of multinary III/V semiconductors via STEM HAADF multislice simulations.
    Duschek L; Beyer A; Oelerich JO; Volz K
    Ultramicroscopy; 2018 Feb; 185():15-20. PubMed ID: 29156397
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.
    Sridhara Rao DV; Sankarasubramanian R; Muraleedharan K; Mehrtens T; Rosenauer A; Banerjee D
    Microsc Microanal; 2014 Aug; 20(4):1262-70. PubMed ID: 24758870
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Probe integrated scattering cross sections in the analysis of atomic resolution HAADF STEM images.
    E H; Macarthur KE; Pennycook TJ; Okunishi E; D'Alfonso AJ; Lugg NR; Allen LJ; Nellist PD
    Ultramicroscopy; 2013 Oct; 133():109-19. PubMed ID: 23969066
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation.
    Grieb T; Tewes M; Schowalter M; Müller-Caspary K; Krause FF; Mehrtens T; Hartmann JM; Rosenauer A
    Ultramicroscopy; 2018 Jan; 184(Pt B):29-36. PubMed ID: 29078105
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Quantification of sample thickness and in-concentration of InGaAs quantum wells by transmission measurements in a scanning electron microscope.
    Volkenandt T; Müller E; Hu DZ; Schaadt DM; Gerthsen D
    Microsc Microanal; 2010 Oct; 16(5):604-13. PubMed ID: 20633317
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Influence of static atomic displacements on composition quantification of AlGaN/GaN heterostructures from HAADF-STEM images.
    Schowalter M; Stoffers I; Krause FF; Mehrtens T; Müller K; Fandrich M; Aschenbrenner T; Hommel D; Rosenauer A
    Microsc Microanal; 2014 Oct; 20(5):1463-70. PubMed ID: 25010567
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: avoiding surface strain induced artifacts.
    Grieb T; Müller K; Fritz R; Grillo V; Schowalter M; Volz K; Rosenauer A
    Ultramicroscopy; 2013 Jun; 129():1-9. PubMed ID: 23542584
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM.
    Kauko H; Grieb T; Bjørge R; Schowalter M; Munshi AM; Weman H; Rosenauer A; van Helvoort AT
    Micron; 2013 Jan; 44():254-60. PubMed ID: 22854214
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Homogeneity and composition of AlInGaN: A multiprobe nanostructure study.
    Krause FF; Ahl JP; Tytko D; Choi PP; Egoavil R; Schowalter M; Mehrtens T; Müller-Caspary K; Verbeeck J; Raabe D; Hertkorn J; Engl K; Rosenauer A
    Ultramicroscopy; 2015 Sep; 156():29-36. PubMed ID: 25978670
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Column ratio mapping: a processing technique for atomic resolution high-angle annular dark-field (HAADF) images.
    Robb PD; Craven AJ
    Ultramicroscopy; 2008 Dec; 109(1):61-9. PubMed ID: 18814971
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-energy electron scattering in carbon-based materials analyzed by scanning transmission electron microscopy and its application to sample thickness determination.
    Pfaff M; Müller E; Klein MF; Colsmann A; Lemmer U; Krzyzanek V; Reichelt R; Gerthsen D
    J Microsc; 2011 Jul; 243(1):31-9. PubMed ID: 21155995
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM.
    Mahalingam K; Haugan HJ; Brown GJ; Eyink KG
    Ultramicroscopy; 2013 Apr; 127():70-5. PubMed ID: 23298538
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.