These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

129 related articles for article (PubMed ID: 25288912)

  • 1. Electronic properties of core-shell nanowire resonant tunneling diodes.
    Zervos M
    Nanoscale Res Lett; 2014; 9(1):509. PubMed ID: 25288912
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Remote p-doping of InAs nanowires.
    Li HY; Wunnicke O; Borgström MT; Immink WG; van Weert MH; Verheijen MA; Bakkers EP
    Nano Lett; 2007 May; 7(5):1144-8. PubMed ID: 17425372
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires.
    Kaladzhian M; von den Driesch N; Demarina N; Povstugar I; Zimmermann E; Jansen MM; Bae JH; Krause C; Bennemann B; Grützmacher D; Schäpers T; Pawlis A
    ACS Appl Mater Interfaces; 2024 Feb; 16(8):11035-11042. PubMed ID: 38377460
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S; Heurlin M; Wernersson LE; Lehmann S; Dick KA
    Nanotechnology; 2012 Jul; 23(28):285601. PubMed ID: 22717421
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.
    Blömers C; Rieger T; Zellekens P; Haas F; Lepsa MI; Hardtdegen H; Gül O; Demarina N; Grützmacher D; Lüth H; Schäpers T
    Nanotechnology; 2013 Jan; 24(3):035203. PubMed ID: 23263179
    [TBL] [Abstract][Full Text] [Related]  

  • 6. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X; Xiong Q; Nam S; Qian F; Li Y; Lieber CM
    Nano Lett; 2007 Oct; 7(10):3214-8. PubMed ID: 17867718
    [TBL] [Abstract][Full Text] [Related]  

  • 7. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.
    Dionízio Moreira M; Venezuela P; Miwa RH
    Nanotechnology; 2010 Jul; 21(28):285204. PubMed ID: 20562482
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures.
    Möller M; Oliveira DS; Sahoo PK; Cotta MA; Iikawa F; Motisuke P; Molina-Sánchez A; de Lima MM; García-Cristóbal A; Cantarero A
    Nanotechnology; 2017 Jul; 28(29):295702. PubMed ID: 28574403
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon.
    Songmuang R; Giang le TT; Bleuse J; Den Hertog M; Niquet YM; Dang le S; Mariette H
    Nano Lett; 2016 Jun; 16(6):3426-33. PubMed ID: 27081785
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Remote p-type Doping in GaSb/InAs Core-shell Nanowires.
    Ning F; Tang LM; Zhang Y; Chen KQ
    Sci Rep; 2015 Jun; 5():10813. PubMed ID: 26028535
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Giant magnetoconductance oscillations in hybrid superconductor-semiconductor core/shell nanowire devices.
    Gül Ö; Günel HY; Lüth H; Rieger T; Wenz T; Haas F; Lepsa M; Panaitov G; Grützmacher D; Schäpers T
    Nano Lett; 2014 Nov; 14(11):6269-74. PubMed ID: 25300066
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell.
    Greenberg Y; Kelrich A; Cohen S; Kar-Narayan S; Ritter D; Calahorra Y
    Nanomaterials (Basel); 2019 Sep; 9(9):. PubMed ID: 31527424
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
    Joyce HJ; Parkinson P; Jiang N; Docherty CJ; Gao Q; Tan HH; Jagadish C; Herz LM; Johnston MB
    Nano Lett; 2014 Oct; 14(10):5989-94. PubMed ID: 25232659
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Anisotropic phase coherence in GaAs/InAs core/shell nanowires.
    Haas F; Zellekens P; Wenz T; Demarina N; Rieger T; Lepsa MI; Grützmacher D; Lüth H; Schäpers T
    Nanotechnology; 2017 Nov; 28(44):445202. PubMed ID: 28840851
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime.
    Zhou C; Zhang XT; Zheng K; Chen PP; Matsumura S; Lu W; Zou J
    Nanoscale; 2019 Apr; 11(14):6859-6865. PubMed ID: 30912781
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Quantum-confinement effects in InAs-InP core-shell nanowires.
    Zanolli Z; Pistol ME; Fröberg LE; Samuelson L
    J Phys Condens Matter; 2007 Jul; 19(29):295219. PubMed ID: 21483071
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.
    Liu X; Liu P; Huang H; Chen C; Jin T; Zhang Y; Huang X; Jin Z; Li X; Tang Z
    Nanotechnology; 2013 Jun; 24(24):245306. PubMed ID: 23702835
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.
    Haas F; Sladek K; Winden A; von der Ahe M; Weirich TE; Rieger T; Lüth H; Grützmacher D; Schäpers T; Hardtdegen H
    Nanotechnology; 2013 Mar; 24(8):085603. PubMed ID: 23385879
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.
    Zieliński M
    J Phys Condens Matter; 2013 Nov; 25(46):465301. PubMed ID: 24129261
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires.
    Luo N; Huang GY; Liao G; Ye LH; Xu HQ
    Sci Rep; 2016 Dec; 6():38698. PubMed ID: 27924856
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.