300 related articles for article (PubMed ID: 25310177)
1. Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Yang L; Majumdar K; Liu H; Du Y; Wu H; Hatzistergos M; Hung PY; Tieckelmann R; Tsai W; Hobbs C; Ye PD
Nano Lett; 2014 Nov; 14(11):6275-80. PubMed ID: 25310177
[TBL] [Abstract][Full Text] [Related]
2. Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.
Khalil HM; Khan MF; Eom J; Noh H
ACS Appl Mater Interfaces; 2015 Oct; 7(42):23589-96. PubMed ID: 26434774
[TBL] [Abstract][Full Text] [Related]
3. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z
Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954
[TBL] [Abstract][Full Text] [Related]
4. Improvement of the Bias Stress Stability in 2D MoS
Park W; Pak Y; Jang HY; Nam JH; Kim TH; Oh S; Choi SM; Kim Y; Cho B
Nanomaterials (Basel); 2019 Aug; 9(8):. PubMed ID: 31409001
[TBL] [Abstract][Full Text] [Related]
5. Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers.
Feng LP; Jiang WZ; Su J; Zhou LQ; Liu ZT
Nanoscale; 2016 Mar; 8(12):6507-13. PubMed ID: 26935307
[TBL] [Abstract][Full Text] [Related]
6. Vertical and In-Plane Current Devices Using NbS
Shin HG; Yoon HS; Kim JS; Kim M; Lim JY; Yu S; Park JH; Yi Y; Kim T; Jun SC; Im S
Nano Lett; 2018 Mar; 18(3):1937-1945. PubMed ID: 29400979
[TBL] [Abstract][Full Text] [Related]
7. Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping.
Oberoi A; Han Y; Stepanoff SP; Pannone A; Sun Y; Lin YC; Chen C; Shallenberger JR; Zhou D; Terrones M; Redwing JM; Robinson JA; Wolfe DE; Yang Y; Das S
ACS Nano; 2023 Oct; 17(20):19709-19723. PubMed ID: 37812500
[TBL] [Abstract][Full Text] [Related]
8. Improved contacts to p-type MoS
Zhang S; Le ST; Richter CA; Hacker CA
Appl Phys Lett; 2019; 115(7):. PubMed ID: 32116333
[TBL] [Abstract][Full Text] [Related]
9. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.
Rai A; Valsaraj A; Movva HC; Roy A; Ghosh R; Sonde S; Kang S; Chang J; Trivedi T; Dey R; Guchhait S; Larentis S; Register LF; Tutuc E; Banerjee SK
Nano Lett; 2015 Jul; 15(7):4329-36. PubMed ID: 26091062
[TBL] [Abstract][Full Text] [Related]
10. A "Click" Reaction to Engineer MoS
Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y
ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073
[TBL] [Abstract][Full Text] [Related]
11. Approaching Ohmic Contacts for Ideal Monolayer MoS
Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y
Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044
[TBL] [Abstract][Full Text] [Related]
12. High-Performance Contact-Doped WSe
Liu B; Yue X; Sheng C; Chen J; Tang C; Shan Y; Han J; Shen S; Wu W; Li L; Lu Y; Hu L; Liu R; Qiu ZJ; Cong C
ACS Appl Mater Interfaces; 2024 Apr; 16(15):19247-19253. PubMed ID: 38591143
[TBL] [Abstract][Full Text] [Related]
13. Enhanced carrier transport by transition metal doping in WS
Liu M; Wei S; Shahi S; Jaiswal HN; Paletti P; Fathipour S; Remškar M; Jiao J; Hwang W; Yao F; Li H
Nanoscale; 2020 Sep; 12(33):17253-17264. PubMed ID: 32329484
[TBL] [Abstract][Full Text] [Related]
14. Benchmarking monolayer MoS
Sebastian A; Pendurthi R; Choudhury TH; Redwing JM; Das S
Nat Commun; 2021 Jan; 12(1):693. PubMed ID: 33514710
[TBL] [Abstract][Full Text] [Related]
15. Highly efficient and stable MoS
Lockhart de la Rosa CJ; Nourbakhsh A; Heyne M; Asselberghs I; Huyghebaert C; Radu I; Heyns M; De Gendt S
Nanoscale; 2017 Jan; 9(1):258-265. PubMed ID: 27906404
[TBL] [Abstract][Full Text] [Related]
16. Improved Contacts and Device Performance in MoS
Andrews K; Bowman A; Rijal U; Chen PY; Zhou Z
ACS Nano; 2020 May; 14(5):6232-6241. PubMed ID: 32320204
[TBL] [Abstract][Full Text] [Related]
17. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS
Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH
Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825
[TBL] [Abstract][Full Text] [Related]
18. A Facile and Effective Method for Patching Sulfur Vacancies of WS
Jiang J; Zhang Q; Wang A; Zhang Y; Meng F; Zhang C; Feng X; Feng Y; Gu L; Liu H; Han L
Small; 2019 Sep; 15(36):e1901791. PubMed ID: 31211505
[TBL] [Abstract][Full Text] [Related]
19. Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2.
Kaushik N; Karmakar D; Nipane A; Karande S; Lodha S
ACS Appl Mater Interfaces; 2016 Jan; 8(1):256-63. PubMed ID: 26649572
[TBL] [Abstract][Full Text] [Related]
20. ALD-grown two-dimensional TiS
Mahlouji R; Kessels WMME; Sagade AA; Bol AA
Nanoscale Adv; 2023 Sep; 5(18):4718-4727. PubMed ID: 37705798
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
